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Infineon Technologies 2EDN7523RXTMA1
- Part No.:
- 2EDN7523RXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
2EDN7523RXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,203
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Product details
Overview
2EDN7523RXTMA1 from Infineon is a dual-channel, inverting-input, 4.2 V UVLO gate driver IC for high-frequency MOSFET and GaN power switches, delivering 5 A sink/source per channel, 17 ns propagation delay, and 1 ns channel-to-channel matching - deployed in server SMPS and telecom DC-DC converters.
For engineers reviewing the 2EDN7523RXTMA1 datasheet, 2EDN7523RXTMA1 pinout, 2EDN7523RXTMA1 application, or 2EDN7523RXTMA1 equivalent, key selection criteria include UVLO threshold (4.2 V), inverting logic configuration, TSSOP-8 package compatibility, and -10 V input robustness for pulse-transformer-driven topologies.
Technical Context
This driver implements independent dual-channel LV-TTL/CMOS-compatible inputs (–5 V to +20 V range) with separate enable pins (ENA/ENB), supporting both direct and inverting logic variants. Its rail-to-rail output stage achieves 0.7 Ω high-side and 0.55 Ω low-side on-resistance.
The architecture integrates fast slew rate (5 ns), tight propagation delay matching (1 ns typ.), and dual UVLO options (4.2 V or 8 V) - enabling safe parallel channel operation and robust protection against ground bounce-induced latch-up.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Drive Strength | 5 A sink/source per channel - enables direct drive of high-Qg GaN FETs and Superjunction MOSFETs without external buffers |
| Propagation Delay | 17 ns typ. - supports >1 MHz switching in LLC and interleaved PFC topologies |
| Channel Matching | 1 ns typ. channel-to-channel delay - allows safe paralleling of outputs for 10 A combined drive capability |
| UVLO Threshold | 4.2 V - provides early turn-off during brown-out conditions before MOSFET RDS(on) degradation occurs |
| Input Voltage Range | –5 V to +20 V - withstands –10 V transient on control pins, eliminating need for clamping diodes in through-hole MOSFET layouts |
| Supply Range | 4.5 V to 20 V - compatible with 5 V, 12 V, and 15 V bias rails across industrial and telecom SMPS designs |
| Logic Type | Inverting - INA/INB high → OUTA/OUTB low; matches controller architectures requiring active-low gate signals |
Pinout & Package
2EDN7523RXTMA1 is housed in a PG-TSSOP-8 package (8-pin, 3 × 3 mm, 0.65 mm pitch) with exposed thermal pad connected to GND. Pin 3 is GND; Pin 1 is ENA; Pin 2 is INA; Pin 4 is INB; Pin 5 is OUTB; Pin 6 is VDD; Pin 7 is OUTA; Pin 8 is ENB.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Enable input, Channel A | Active-high logic control: high or open → OUTA follows INA; low → forces OUTA low regardless of INA state |
| 2 INA | Inverting input signal, Channel A | High → OUTA low; low → OUTA high - matches controllers with complementary output stages or level-shifted timing |
| 3 GND | Power and signal reference | Primary return path for driver supply and logic; exposed pad must be soldered to PCB GND plane for thermal and EMI performance |
| 4 INB | Inverting input signal, Channel B | Independent inverting control of OUTB - enables asymmetric or phase-shifted drive in multi-phase converters |
| 5 OUTB | Driver output, Channel B | Low-impedance push-pull stage capable of sourcing/sinking 5 A - directly drives gate capacitance up to ~5 nF at <20 ns rise/fall |
| 6 VDD | Positive supply input | Accepts 4.5–20 V; internal UVLO monitors this rail - drop below 4.2 V disables both outputs within 100 ns |
| 7 OUTA | Driver output, Channel A | Electrically identical to OUTB; 1 ns matching enables synchronized dual-switch operation in half-bridge or synchronous rectifier configurations |
| 8 ENB | Enable input, Channel B | Independent enable for OUTB - supports dynamic phase shedding or fault-isolation in multi-rail systems |
Key Features
| Feature | Design Value |
|---|---|
| 5 A sink/source per channel | Eliminates need for external buffer stages when driving OptiMOS™, CoolMOS™, or GaN HEMTs with Qg ≤ 40 nC |
| 1 ns channel-to-channel delay matching | Enables parallel use of both outputs for 10 A peak drive without shoot-through risk in high-current synchronous rectification |
| –10 V input pin robustness | Prevents latch-up during ground-bounce transients in high-dI/dt motor control or brick converter layouts |
| 4.2 V UVLO with fast disable | Guarantees MOSFET turn-off within 100 ns of VDD sag - critical for maintaining safe operating area during AC line dips |
| TSSOP-8 industry-standard footprint | Direct drop-in replacement for legacy drivers (e.g., IR2110, UCC27524) without PCB redesign |
Applications
| Server SMPS | Telecom DC-DC Converter |
|---|---|
|
Use Scenario: 48 V input, 12 V/100 A output VRM in rack-mounted servers using interleaved LLC topology. IC Role / Device Role / Timing Role: Dual-channel gate driver controlling high-side and low-side GaN FETs in synchronous rectifier stage with precise dead-time management. Use Value: 17 ns propagation delay and 1 ns matching ensure accurate zero-voltage switching (ZVS) window control, reducing conduction losses by ≥8% vs. slower drivers. |
Use Scenario: 380 V DC input, 12 V/60 A isolated brick converter for 5G base station power shelves. IC Role / Device Role / Timing Role: Isolated gate driver interface for pulse-transformer-coupled control, leveraging –10 V input tolerance to suppress ground-bounce induced false triggering. Use Value: Robust –10 V input rating eliminates need for external TVS clamps on INA/INB, reducing BOM count and layout area by 12%. |
| Industrial Motor Control | Solar MPPT DC-DC Stage |
|
Use Scenario: 3-phase inverter for 7.5 kW servo drive using discrete IGBT modules. IC Role / Device Role / Timing Role: High-current gate driver for upper/lower leg IGBTs with independent ENA/ENB enabling dynamic braking and fault shutdown sequencing. Use Value: 5 A drive strength ensures <150 ns turn-on time for 1200 V/100 A IGBTs, improving torque response bandwidth by 22%. |
Use Scenario: Bidirectional DC-DC converter in solar string optimizer, stepping 30–60 V PV input to 400 V bus. IC Role / Device Role / Timing Role: Dual-output driver for synchronous buck-boost power stage, where matched delays prevent cross-conduction during mode transitions. Use Value: 1 ns channel matching reduces worst-case shoot-through window to <5 ns, allowing safe operation at 300 kHz switching frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADR | Non-inverting logic, 5 A drive, 15 ns delay, no –10 V input rating, 3.3 V/5 V logic only | Lacks UVLO hysteresis and negative input tolerance - unsuitable for pulse-transformer interfaces or noisy industrial grounds | Select when system uses clean 3.3 V controller outputs and requires non-inverting polarity; verify external clamping for ground bounce |
| IR2110STRPBF | High-/low-side bootstrap architecture, 2 A drive, 120 ns delay, no independent enable pins, 10–20 V VDD only | Requires external bootstrap diode/capacitor; cannot drive low-side-only or dual low-side configurations without modification | Choose only for cost-sensitive half-bridge designs with fixed 12–15 V supply; avoid for GaN, ZVS, or high-frequency (>500 kHz) use |
Compared with UCC27524ADR and IR2110STRPBF, 2EDN7523RXTMA1 delivers superior timing precision (1 ns matching), rugged input protection (–10 V), and flexible enable control - making it optimal for high-reliability telecom, server, and solar converters where timing integrity and fault resilience are design-critical.
Availability
2EDN7523RXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC converters, and industrial motor control systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for 2EDN7523RXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q100 and IEC 60747.
This part belongs to the EiceDRIVER™ 2EDN752x family - engineered specifically for high-efficiency, high-frequency switched-mode power supplies using GaN, SiC, and advanced silicon MOSFETs.
FAQ
Is 2EDN7523RXTMA1 pin-compatible with other 2EDN752x variants?
Yes - all 2EDN752x/2EDN852x devices in the same package (TSSOP-8) share identical pinout and footprint. The "3" suffix denotes inverting logic, while "4" indicates non-inverting; UVLO (4.2 V vs. 8 V) and package type (R = TSSOP) are encoded separately. No PCB change is needed when swapping within the R-suffix series.
What is the maximum recommended gate capacitance for reliable 5 A drive?
Based on typical 17 ns propagation delay and 5 ns slew rate, 2EDN7523RXTMA1 reliably drives MOSFETs/GaN FETs with total gate charge (Qg) up to 40 nC at 20 V VGS. For Qg > 30 nC, layout optimization (short gate traces, local 100 nF ceramic decoupling at VDD) is required to maintain <25 ns rise/fall times.
Does the 4.2 V UVLO apply to both channels independently?
Yes - the UVLO circuit monitors VDD globally, but its activation disables both OUTA and OUTB simultaneously. There is no per-channel UVLO; however, independent ENA/ENB pins allow selective channel disablement without affecting the other channel's operation under normal VDD conditions.
Can ENA and ENB be tied together for single-enable operation?
Yes - ENA and ENB may be shorted and driven by a common signal. This configures the device as a dual-output driver with unified enable control. Ensure the shared enable source can sink/source sufficient current (≤10 µA input leakage) and meets the –5 V to +20 V voltage range specification.
2EDN7523RXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Last Time Buy
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- 1.1V, 1.98V
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 5.3ns, 4.5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSSOP-8
2EDN7523RXTMA1 FAQ
1.How can I place an order for 2EDN7523RXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN7523RXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN7523RXTMA1 reliable?
The price and inventory of 2EDN7523RXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN7523RXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN7523RXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN7523RXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN7523RXTMA1?
2EDN7523RXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN7523RXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN7523RXTMA1?
For technical support, including 2EDN7523RXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN7523RXTMA1 requirements.
6.How does Aetrix verify that 2EDN7523RXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN7523RXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN7523RXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN7523RXTMA1?
All 2EDN7523RXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN7523RXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN7523RXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN7523RXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN7523RXTMA1 Tags
-
ZXGD3009E6TA
Diodes Incorporated
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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
Texas Instruments
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MCP1416T-E/OT
Microchip Technology
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MCP1402T-E/OT
Microchip Technology
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MCP1415T-E/OT
Microchip Technology
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MCP1401T-E/OT
Microchip Technology
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IX4428NTR
Littelfuse Inc.
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IRS2005STRPBF
Infineon Technologies
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IRS2008STRPBF
Infineon Technologies
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IX4310TTR
Littelfuse Inc.
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2EDN7524RXTMA1
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