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Infineon Technologies 2EDN7524FXTMA1
- Part No.:
- 2EDN7524FXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
2EDN7524FXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,196
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Product details
Overview
2EDN7524FXTMA1 from Infineon is a dual-channel, non-inverting, 4.2 V UVLO gate driver IC for high-speed MOSFET and GaN power switching. It delivers 5 A peak source/sink per channel, 17 ns propagation delay, 1 ns channel-to-channel matching, and rail-to-rail output stage (0.7 Ω high-side / 0.55 Ω low-side). Used in server SMPS, telecom DC-DC bricks, and solar inverters requiring precise parallel channel operation.
For engineers reviewing the 2EDN7524FXTMA1 datasheet, 2EDN7524FXTMA1 pinout, 2EDN7524FXTMA1 application, or 2EDN7524FXTMA1 equivalent, key selection criteria include UVLO threshold (4.2 V), input logic type (direct/non-inverting), package (PG-DSO-8), reverse current robustness (−5 A), and compatibility with OptiMOS™/CoolMOS™/GaN devices.
Technical Context
This driver integrates two independent, matched-output stages with LV-TTL/CMOS 3.3 V compatible inputs (−5 V to +20 V range) and −10 V input pin robustness against ground bounce. Its true rail-to-rail output stage enables fast slew rates (5 ns) and low on-resistance drive into capacitive gate loads.
The 4.2 V UVLO ensures immediate shutdown during supply brownout, while 1 ns inter-channel delay matching allows safe paralleling of both outputs for 10 A aggregate drive. The PG-DSO-8 package supports standard PCB layout upgrades without redesign.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Drive Strength | 5 A sink/source per channel - enables direct drive of high-Qg MOSFETs/GaN HEMTs without external buffers |
| Propagation Delay | 17 ns typ. - supports >2 MHz switching in LLC and ZVS topologies with tight timing control |
| Channel Matching | 1 ns typ. channel-to-channel delay - permits parallel use of both outputs for 10 A total drive without shoot-through risk |
| UVLO Threshold | 4.2 V - provides early fault response before VDD drops below minimum gate drive voltage for logic-level MOSFETs |
| Input Voltage Range | −5 V to +20 V - withstands negative transients from parasitic inductance, eliminating need for clamping diodes |
| Output On-Resistance | 0.7 Ω (high-side), 0.55 Ω (low-side) - minimizes conduction loss and thermal rise during high-duty-cycle operation |
| Supply Range | 4.5 V to 20 V - compatible with 5 V, 12 V, and 15 V bias rails across industrial and telecom SMPS designs |
Pinout & Package
2EDN7524FXTMA1 uses the PG-DSO-8 (SOIC-8 wide-body) package with exposed pad not present - standard surface-mount footprint compatible with legacy SOIC-8 layouts and reflow profiles.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Enable input, Channel A | Active-high logic control: high or open = INA controls OUTA; low = forces OUTA low regardless of INA |
| 2 INA | Non-inverting input, Channel A | Direct logic mapping: high → OUTA high; low → OUTA low - no inversion required in controller firmware |
| 3 GND | Power and signal reference | Common return path for VDD, inputs, and outputs; must be low-inductance connection to minimize ground bounce |
| 4 INB | Non-inverting input, Channel B | Direct logic mapping identical to INA - simplifies dual-channel PWM routing in interleaved PFC or half-bridge drivers |
| 5 OUTB | Driver output, Channel B | Low-impedance push-pull stage capable of sourcing/sinking 5 A - directly drives gate of 1000+ pF MOSFETs at >1 MHz |
| 6 VDD | Positive supply input | Primary power rail (4.5–20 V); powers internal logic and output stages - requires local 100 nF ceramic decoupling |
| 7 OUTA | Driver output, Channel A | Matched to OUTB in timing and drive strength - enables symmetrical layout and equal trace lengths for EMI reduction |
| 8 ENB | Enable input, Channel B | Independent enable for Channel B - supports asymmetric enable sequencing or fault-isolation in multi-phase systems |
Key Features
| Feature | Design Value |
|---|---|
| 5 ns slew rate | Enables <10 ns rise/fall times into 1 nF load - critical for minimizing switching losses in GaN-based resonant converters |
| −5 A reverse current robustness | Eliminates need for external Schottky diodes at outputs - reduces BOM count and PCB area in high-density SMPS |
| −10 V input pin tolerance | Prevents latch-up during ground bounce events in through-hole MOSFET layouts or pulse-transformer drive circuits |
| Industry-standard pinout | Drop-in replacement for legacy SOIC-8 drivers - avoids PCB redesign when upgrading from older gate drivers |
| Dual independent channels | Supports flexible configurations: half-bridge, dual half-bridge, interleaved PFC, or parallel drive - no shared logic constraints |
Applications
| Server SMPS | Telecom DC-DC Bricks |
|---|---|
|
Use Scenario: 48 V input, 12 V/54 A output VRM in AI accelerator rack servers using interleaved LLC topology. IC Role / Device Role / Timing Role: Dual-channel gate driver controlling primary-side GaN HEMTs in phase-shifted LLC half-bridges with synchronized dead-time management. Use Value: 1 ns channel matching ensures balanced current sharing between paralleled bridge legs, reducing thermal stress and improving efficiency by 0.8% at full load. |
Use Scenario: 3 kW telecom rectifier brick with dual active clamp forward and synchronous rectification on secondary side. IC Role / Device Role / Timing Role: Driving high-side and low-side CoolMOS™ switches in active clamp circuit while enabling SR FETs via independent ENA/ENB control. Use Value: 4.2 V UVLO prevents erratic switching during brownout conditions common in distributed telecom power systems, avoiding bus collapse. |
| Solar Microinverters | Industrial Motor Drives |
|
Use Scenario: Single-phase 300 W microinverter with interleaved boost + full-bridge inverter stage feeding grid-connected AC output. IC Role / Device Role / Timing Role: Driving boost MOSFETs in interleaved configuration and inverter leg switches with precise 17 ns delay consistency across channels. Use Value: 5 A drive strength eliminates external gate buffers, reducing component count and enabling compact 2-layer PCB design for rooftop deployment. |
Use Scenario: 7.5 kW servo drive using three half-bridge modules per phase, each powered by SiC MOSFETs with fast switching requirements. IC Role / Device Role / Timing Role: Dual-channel driver per half-bridge leg, with ENA/ENB used for dynamic dead-time adjustment and fault shutdown coordination. Use Value: −5 A reverse current rating handles inductive kickback during short-circuit events without external protection, improving system fault resilience. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADRMR | 4 A drive, 15 ns delay, 5 V UVLO, no −10 V input tolerance, TSSOP-8 only | Lacks reverse current robustness and input overvoltage margin - requires external protection in high-noise motor drives | Preferred where cost sensitivity outweighs ruggedness needs and 5 V UVLO aligns with existing supervisor ICs |
| IRS2007PBF | 2.5 A drive, 60 ns delay, 10 V UVLO, HV floating capability, DIP-8 | Designed for bootstrap high-side drive in half-bridges - not suitable for dual low-side or GaN applications | Only viable for legacy 600 V IGBT half-bridge designs where high-voltage isolation is mandatory |
Compared with UCC27524ADRMR and IRS2007PBF, 2EDN7524FXTMA1 uniquely combines 5 A drive, 1 ns matching, −10 V input robustness, and 4.2 V UVLO - making it optimal for high-reliability, high-frequency GaN/SiC SMPS where timing precision and fault immunity are non-negotiable.
Availability
2EDN7524FXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC bricks, and solar microinverters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for 2EDN7524FXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gallium nitride technologies.
2EDN7524FXTMA1 belongs to the EiceDRIVER™ 2EDN752x family - engineered for high-efficiency, high-reliability switched-mode power supplies targeting datacenter, telecom, and renewable energy applications.
FAQ
Is 2EDN7524FXTMA1 pin-compatible with earlier Infineon gate drivers like 2EDN7523F?
No - 2EDN7524FXTMA1 uses non-inverting logic (direct input), while 2EDN7523F uses inverting logic. Pinout is identical (PG-DSO-8), but INA/INB behavior is inverted; firmware or external logic must be adjusted to maintain correct output polarity. No hardware change is needed beyond signal polarity verification.
What is the maximum recommended gate capacitance this driver can switch at 1 MHz?
At 1 MHz, with 5 ns slew rate and 5 A peak current, 2EDN7524FXTMA1 can reliably drive up to 1.2 nF total gate charge (Qg ≈ 45 nC at 10 V) while maintaining <10 ns rise/fall times. This supports GaN HEMTs like GS66508T and SiC MOSFETs such as IMW120R045M1H in hard-switched topologies.
Does the 4.2 V UVLO apply to both channels independently?
Yes - the UVLO circuit monitors VDD globally, but its activation disables both OUTA and OUTB simultaneously. However, ENA and ENB remain functional below UVLO threshold, allowing external logic to hold outputs low during startup or fault recovery sequences before VDD stabilizes above 4.2 V.
Can ENA and ENB be tied together for single-enable operation?
Yes - ENA and ENB may be connected to a common enable signal without adverse effect. The internal logic treats them as independent, but tying them simplifies control in half-bridge or dual-FET configurations where synchronized enable/disable is required, with no timing skew introduced.
2EDN7524FXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 5.3ns, 4.5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8-60
2EDN7524FXTMA1 FAQ
1.How can I place an order for 2EDN7524FXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN7524FXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN7524FXTMA1 reliable?
The price and inventory of 2EDN7524FXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN7524FXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN7524FXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN7524FXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN7524FXTMA1?
2EDN7524FXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN7524FXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN7524FXTMA1?
For technical support, including 2EDN7524FXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN7524FXTMA1 requirements.
6.How does Aetrix verify that 2EDN7524FXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN7524FXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN7524FXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN7524FXTMA1?
All 2EDN7524FXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN7524FXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN7524FXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN7524FXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN7524FXTMA1 Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
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