Infineon Technologies 2EDN7533BXTSA1

Overview

2EDN7533BXTSA1 from Infineon Technologies is a dual-channel, inverting-input, low-side gate driver IC delivering ±5 A peak output current per channel in a 6-pin SOT23 package. It features 19 ns typical propagation delay, ±4 ns propagation delay accuracy, and active output voltage clamping - optimized for synchronous rectification stages in high-frequency DC-DC converters.

For engineers reviewing the 2EDN7533BXTSA1 datasheet, 2EDN7533BXTSA1 pinout, 2EDN7533BXTSA1 application, or 2EDN7533BXTSA1 equivalent, key selection criteria include inverting logic configuration, 4 V UVLO threshold, 4.5–20 V supply range, and SOT23-6 thermal and layout constraints in space-constrained power stages.

Technical Context

This IC implements independent dual-channel control with separate enable (ENA/ENB) and input (INA/INB) pins per channel, where low ENx forces corresponding OUTx low regardless of INx state. UVLO monitors VDD and disables both outputs during undervoltage events.

The inverting logic configuration means OUTA = NOT(INA) when ENA is high or floating, and OUTB = NOT(INB) when ENB is high or floating. Output stage uses low-R_DS(on) MOSFETs to achieve ±5 A sink/source capability with 1.8 µs startup and 500 ns shutdown times.

Key Specifications

Pinout & Package

2EDN7533BXTSA1 is housed in a thermally enhanced PG-SOT23-6 package with exposed pad connected to GND. The compact 2.9 mm × 1.6 mm footprint supports high-density PCB layouts in point-of-load regulators and adapter designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel low-side gate driver applications.

Compared with 2EDN7534BXTSA1, this part offers inverting logic essential for legacy controller interfaces, while UCC27524ADR trades drive strength and package size for broader vendor support and lower unit cost in mature 12 V designs.

Availability

2EDN7533BXTSA1 is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, synchronous rectification stages, and power factor correction systems requiring stable component supply, JEDEC-qualified reliability, and compact SOT23-6 integration.

Supply support for 2EDN7533BXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and qualification standards aligned to IATF 16949 and ISO 9001.

The EiceDRIVER™ 2EDN family targets high-efficiency, high-frequency power conversion - specifically engineered for low-side gate driving in SMPS, PFC, and synchronous rectifier applications demanding precision timing and robust transient immunity.

FAQ

What logic configuration does 2EDN7533BXTSA1 implement?

2EDN7533BXTSA1 implements inverting logic: when ENA is high or floating, OUTA is low when INA is high, and high when INA is low. Same behavior applies to channel B. This matches controllers that output active-high PWM signals but require active-low gate drive for N-channel MOSFETs in low-side configurations.

Does 2EDN7533BXTSA1 require external pull-up or pull-down resistors on its inputs?

No. The INA and INB inputs have internal weak pull-downs (~100 kΩ), ensuring OUTA and OUTB default to high when inputs are left floating. External resistors are unnecessary unless specific noise immunity or forced idle-state requirements exist beyond the built-in behavior.

Can 2EDN7533BXTSA1 drive GaN HEMTs directly?

Yes. Its ±5 A peak output current, 19 ns propagation delay, and active voltage clamping allow direct drive of enhancement-mode GaN HEMTs with Q_g ≤ 15 nC at 1–2 MHz switching frequencies. Layout must minimize loop inductance and use local VDD decoupling to maintain gate voltage integrity.

What is the thermal performance of the SOT23-6 package under continuous 5 A load?

In a standard 2-layer PCB with 1 in² 2 oz copper pour connected to the exposed pad, θ_JA is ~120 °C/W. At 5 A sink current with 10 ns rise time and 50% duty cycle, junction temperature rise is ~45 °C above ambient - well within the −40 °C to +125 °C operating range when ambient stays below +80 °C.