Infineon Technologies 2EDN7533FXTMA1

Overview

2EDN7533FXTMA1 from Infineon Technologies is a dual-channel, inverting-input, low-side gate driver IC delivering ±5 A peak source/sink current per channel in an 8-pin DSO package. It features 19 ns typical propagation delay, ±4 ns propagation delay accuracy, and active output voltage clamping-designed for fast-switching MOSFET/IGBT control in synchronous rectification stages of DC-DC converters.

For engineers reviewing the 2EDN7533FXTMA1 datasheet, 2EDN7533FXTMA1 pinout, 2EDN7533FXTMA1 application, or 2EDN7533FXTMA1 equivalent, key selection criteria include inverting logic configuration, 4 V UVLO threshold, 1.8 µs startup time, and robust −12 V input transient tolerance under industrial operating conditions.

Technical Context

The 2EDN7533FXTMA1 implements independent dual-channel logic with ENA/ENB enable control and INA/INB inverting inputs-each channel drives a low-impedance output stage capable of ±5 A transient current. Its internal UVLO circuit triggers at 4 V (rising) and 3.5 V (falling), ensuring safe gate drive only within valid VDD range (4.5–20 V).

Propagation delay matching between channels is tightly controlled at +6/−4 ns, and active output voltage clamping limits OUTA/OUTB to ≤18.5 V during Miller plateau transitions-preventing unintended device turn-on during high dv/dt switching events in hard-switched topologies.

Key Specifications

Pinout & Package

2EDN7533FXTMA1 is housed in an 8-pin DSO (PG-DSO-8) package with exposed pad for thermal enhancement. Pin 3 is GND reference; pins 1 and 8 are independent enable inputs (ENA/ENB); pins 2 and 4 are inverting logic inputs (INA/INB); pins 5 and 7 are low-impedance outputs (OUTB/OUTA); pin 6 is VDD supply.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side gate driver applications.

Compared with 2EDN7534FXTMA1, the 2EDN7533FXTMA1 provides inverting logic essential for legacy PWM controllers; versus UCC27531DR, it delivers integrated dual-channel timing coherence and enable flexibility-critical for high-density, high-efficiency synchronous rectifier designs.

Availability

2EDN7533FXTMA1 is available at Aetrix Electronics and suitable for synchronous rectification stages, DC-DC power converters, and power factor correction systems requiring stable component supply across industrial temperature ranges and long production lifecycles.

Supply support for 2EDN7533FXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs-with global manufacturing, qualification, and application engineering infrastructure.

The EiceDRIVER™ 2EDN family targets high-frequency, high-efficiency power conversion-designed specifically for synchronous rectification, SMPS, and PFC applications demanding precision timing, robust gate drive, and industrial-grade reliability.

FAQ

What is the logic configuration of 2EDN7533FXTMA1?

The "3" in the part number indicates inverting input logic: a high signal on INA drives OUTA low, and a low signal on INA drives OUTA high. This matches legacy PWM controllers that output high-active gate signals without requiring external inverters. The behavior is confirmed in Table 1 of the Infineon datasheet Rev. 1.0, with ENA/ENB enabling independent channel control.

Does 2EDN7533FXTMA1 support independent channel shutdown?

Yes-pins 1 (ENA) and 8 (ENB) provide independent enable control for channels A and B. Driving ENA low forces OUTA low regardless of INA state; similarly, ENB low forces OUTB low. This allows asymmetric operation such as phase shedding in multiphase converters or fault isolation without affecting the other channel.

What is the purpose of active output voltage clamping in this driver?

Active output voltage clamping limits OUTA and OUTB to ≤18.5 V during Miller plateau transitions-preventing unintended turn-on of high-side MOSFETs in half-bridge or active-clamp topologies. This eliminates need for external Zener clamps and improves system reliability under high dv/dt conditions, as verified in Section 4.6 of the datasheet.

Can 2EDN7533FXTMA1 drive GaN HEMTs?

No-2EDN7533FXTMA1 is optimized for silicon MOSFETs and IGBTs, with output stage designed for ±5 A peak current and 18.5 V clamping. GaN HEMTs typically require faster edge rates (<5 ns), tighter propagation delay matching (<100 ps), and lower gate charge drive impedance not supported by this device's architecture or characterization.