Infineon Technologies 2EDN7534GXTMA1

Overview

2EDN7534GXTMA1 from Infineon Technologies is a dual-channel, non-inverting, low-side gate driver IC delivering ±5 A peak output current with 19 ns typical propagation delay and ±6/–4 ns delay accuracy. It operates from 4.5 V to 20 V supply, features active output voltage clamping, and is packaged in PG-WSON-8 for high-density power stage control in synchronous rectification and DC-DC converters.

For engineers reviewing the 2EDN7534GXTMA1 datasheet, 2EDN7534GXTMA1 pinout, 2EDN7534GXTMA1 application, or 2EDN7534GXTMA1 equivalent, key selection criteria include UVLO threshold (4 V), output start-up time (1.8 µs), shut-down time (500 ns), input robustness (–12 V), and reverse current rating (5 A) - all critical for fast-switching MOSFET gate drive integrity.

Technical Context

This IC implements independent dual-channel logic with ENA/ENB enable control and INA/INB direct-input mapping to OUTA/OUTB. Each channel features matched propagation delay paths and active clamping to limit negative voltage excursion at the output pins during fast switching transients.

The device uses a robust CMOS-based driver stage with low R_DS(on) output stage and integrated UVLO with hysteresis (4 V turn-on, ~0.5 V hysteresis). Its PG-WSON-8 package includes an exposed thermal pad tied to GND, enabling efficient heat dissipation in compact 5 A gate drive applications.

Key Specifications

Pinout & Package

2EDN7534GXTMA1 is housed in a leadless PG-WSON-8 package (5 mm × 6 mm, 0.65 mm pitch) with exposed thermal pad connected to GND for enhanced thermal performance in high-current gate drive applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel low-side gate driver applications.

Compared with 2EDN7534FXTMA1 and 2EDN7534RXTMA1, the 2EDN7534GXTMA1 offers superior thermal performance (lower θ_JA) and smaller footprint in WSON-8, making it optimal for space-constrained, high-efficiency DC-DC modules where thermal density exceeds 1.2 W/cm².

Availability

2EDN7534GXTMA1 is available at Aetrix Electronics and suitable for switch-mode power supplies, DC-DC buck converters, and synchronous rectification stages requiring stable component supply, JEDEC-qualified reliability, and high-speed gate drive precision.

Supply support for 2EDN7534GXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The EiceDRIVER™ 2EDN family targets high-frequency, high-efficiency power conversion systems - specifically engineered for low-side gate driving in SMPS, PFC, and synchronous rectifier topologies demanding tight timing, robust transient immunity, and compact packaging.

FAQ

What is the recommended minimum VDD bypass capacitance for 2EDN7534GXTMA1?

A minimum 100 nF ceramic capacitor placed within 2 mm of the VDD and GND pins is required, supplemented by a 1–10 µF bulk capacitor on the local 12 V rail. This ensures stable operation under ±5 A transient load steps and suppresses supply rail ringing during 19 ns edge transitions.

Can 2EDN7534GXTMA1 drive high-side N-channel MOSFETs directly?

No - it is a dedicated low-side driver only. Its outputs are referenced to GND and lack level-shifting capability. Driving high-side N-MOSFETs requires either a bootstrap circuit with external diode/capacitor or a dedicated high-side or half-bridge driver IC such as IRS2007 or 2EDF7275K.

Does 2EDN7534GXTMA1 support independent UVLO thresholds per channel?

No - UVLO is global and applies to both channels simultaneously. When VDD drops below 4 V (typ.), both OUTA and OUTB are forced low regardless of ENA/ENB or INA/INB states. There is no per-channel UVLO enable/disable functionality.

Is the exposed thermal pad on PG-WSON-8 electrically connected internally?

Yes - the exposed pad is internally connected to GND and must be soldered to a PCB GND plane with ≥4 thermal vias (0.3 mm diameter) to achieve the specified θ_JA of 42 K/W. Leaving it floating degrades thermal performance by >35% and risks parametric drift at full load.