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Infineon Technologies 2EDN7534RXTMA1
- Part No.:
- 2EDN7534RXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
2EDN7534RXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:3,823
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Product details
Overview
2EDN7534RXTMA1 from Infineon Technologies is a dual-channel, non-inverting, low-side gate driver IC delivering ±5 A peak output current with 19 ns typical propagation delay and ±6/–4 ns delay accuracy. It features active output voltage clamping, 4 V UVLO, and operates from 4.5 V to 20 V supply-designed for synchronous rectification stages in high-efficiency DC-DC converters.
For engineers reviewing the 2EDN7534RXTMA1 datasheet, 2EDN7534RXTMA1 pinout, 2EDN7534RXTMA1 application, or 2EDN7534RXTMA1 equivalent, key selection criteria include output drive strength, timing precision under fast-switching conditions, UVLO threshold compatibility with controller ICs, and thermal performance in compact SMT layouts.
Technical Context
This IC integrates two independent low-side drivers with matched propagation delays and tightly controlled rise/fall times (typ. 10 ns), enabling precise dead-time control in half-bridge configurations. Its logic inputs accept standard CMOS/TTL levels and support enable-controlled channel gating via ENA/ENB pins.
The device implements active output voltage clamping to limit negative transients during MOSFET turn-off, improving system robustness without external components. UVLO ensures both outputs remain low until VDD exceeds 4.0 V (turn-on) and stays above 3.5 V (hysteresis), preventing erratic switching during power-up/down.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Output Current | ±5 A - drives low-Qg MOSFETs at >1 MHz switching frequencies without external boost circuitry |
| Propagation Delay | 19 ns typ. - enables sub-50 ns dead-time implementation in synchronous buck converters |
| Delay Accuracy | +6 / –4 ns - minimizes channel-to-channel skew for balanced gate drive timing |
| UVLO Threshold | 4.0 V (ON), 3.5 V (OFF) - compatible with 5 V controller rails and supports brown-out protection |
| Supply Voltage Range | 4.5 V to 20 V - accommodates wide-input industrial and telecom power supplies |
| Output Rise/Fall Time | 10 ns typ. - reduces switching losses in GaN and SiC half-bridges |
| Input Robustness | –12 V input tolerance - withstands negative transient coupling on INA/INB lines |
Pinout & Package
2EDN7534RXTMA1 is packaged in PG-TSSOP-8 (lead pitch 0.65 mm, body size 3.0 × 4.4 mm), featuring an exposed thermal pad connected to GND for enhanced power dissipation in high-current operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Enable input for channel A | High or open = OUTA follows INA; low = OUTA forced low regardless of INA state |
| 2 INA | Non-inverting input for channel A | Direct logic control of OUTA; TTL/CMOS compatible with 3.3 V/5 V systems |
| 3 GND | Reference ground | Primary return path for driver outputs and logic; exposed pad must be soldered to PCB GND plane |
| 4 INB | Non-inverting input for channel B | Direct logic control of OUTB; electrically isolated from INA but shares same VDD/GND domain |
| 5 OUTB | Low-side driver output B | ±5 A capable output with active clamping; connects directly to source of N-channel MOSFET |
| 6 VDD | Positive supply rail | 4.5–20 V input; powers internal logic and output stage; decoupling capacitor required near pin |
| 7 OUTA | Low-side driver output A | ±5 A capable output with active clamping; matches OUTB timing within ±4 ns |
| 8 ENB | Enable input for channel B | High or open = OUTB follows INB; low = OUTB forced low regardless of INB state |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent enable inputs | ENA/ENB allow per-channel soft-start and fault isolation without external logic |
| Active output voltage clamping | Clamps negative transients to –2.5 V, eliminating need for external Schottky diodes |
| Tight propagation delay matching | Channel-to-channel delay mismatch ≤ 4 ns ensures symmetrical switching in dual-phase topologies |
| Reverse current robustness | Withstands 5 A reverse current during shoot-through events without latch-up or damage |
| JEDEC industrial qualification | Qualified per JESD47 and JESD22-A108, supporting 10-year field reliability in harsh environments |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-density 48 V–12 V intermediate bus converter in data center servers using dual-phase synchronous buck topology. IC Role / Device Role / Timing Role: Low-side gate driver for two parallel N-channel MOSFETs per phase, providing matched 19 ns propagation delay and ±5 A drive to minimize conduction loss and gate charge time. Use Value: Enables <100 ns dead-time control and reduces total gate drive loss by 35% vs. discrete driver solutions. | Use Scenario: 24 V input, 5 V/30 A output isolated DC-DC module for PLC I/O modules requiring high efficiency and EMI compliance. IC Role / Device Role / Timing Role: Dual low-side driver controlling synchronous rectifiers in secondary-side full-wave configuration with tight timing coordination. Use Value: Active clamping eliminates external freewheeling diodes, reducing BOM count and improving light-load efficiency by 2.1%. |
| Telecom Rectifier Module | EV Onboard Charger Auxiliary Supply |
Use Scenario: 3 kW telecom rectifier with interleaved PFC + LLC stages where secondary-side synchronous rectification demands precise timing and high current drive. IC Role / Device Role / Timing Role: Dual-channel driver for two parallel low-side switches in LLC synchronous rectifier bank, operating at 300–500 kHz. Use Value: 10 ns rise/fall time and ±4 ns channel matching reduce switching overlap loss by 18% at 400 kHz. | Use Scenario: 6.6 kW OBC auxiliary 12 V/20 A supply using flyback topology with synchronous rectification for improved thermal margin. IC Role / Device Role / Timing Role: Low-side driver for dual parallel SR MOSFETs, leveraging ENA/ENB for adaptive burst-mode control during light load. Use Value: 4 V UVLO aligns with 5 V controller rail, ensuring clean startup and preventing partial switching during brown-out. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADR | 4 A peak output, 17 ns propagation delay, no active clamping, 5 V UVLO | Lacks negative transient protection; requires external clamping diode in high-dV/dt environments | Preferred when cost sensitivity outweighs clamping requirement and UVLO alignment with 5 V controllers is acceptable |
| LM5113MMX/NOPB | 5 A peak output, 25 ns propagation delay, 8 V UVLO, no enable pins | No per-channel enable control; fixed 8 V UVLO limits use with 5 V controller rails | Suitable for simpler designs where channel independence and low UVLO are not critical |
Compared with UCC27524ADR and LM5113MMX/NOPB, 2EDN7534RXTMA1 provides superior timing accuracy, integrated clamping, and flexible 4 V UVLO-making it optimal for high-reliability, high-frequency synchronous rectification where layout space and transient immunity are constrained.
Availability
2EDN7534RXTMA1 is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, JEDEC-qualified reliability, and high-current low-side drive capability.
Supply support for 2EDN7534RXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The EiceDRIVER™ 2EDN family targets high-efficiency, high-frequency power conversion systems-specifically engineered for synchronous rectification, DC-DC conversion, and PFC stages where timing precision and robust gate drive are critical.
FAQ
What is the maximum recommended PCB trace length between VDD and the decoupling capacitor?
The datasheet specifies ≤5 mm trace length from VDD pin to 100 nF ceramic capacitor (X7R, 0603 or larger). Longer traces increase inductance, degrading high-frequency current delivery and causing overshoot on OUTA/OUTB during fast switching transitions.
Can 2EDN7534RXTMA1 drive GaN HEMTs directly without level-shifting?
Yes-it supports 3.3 V and 5 V logic inputs and delivers ±5 A into capacitive loads up to 4.7 nF, sufficient for common GaN devices like EPC2065 and GS66508T. No level shifter is needed if the controller outputs match its input voltage thresholds (VIH = 2.0 V min, VIL = 0.8 V max).
How does the active output voltage clamping function protect the MOSFET gate?
During fast turn-off, parasitic inductance can induce negative voltage spikes at the gate. The clamping circuit limits OUTA/OUTB to –2.5 V, preventing gate oxide stress and avoiding unintended turn-on of the driven MOSFET due to Miller capacitance coupling.
Is the exposed thermal pad on the TSSOP-8 package electrically connected internally?
Yes-the exposed pad is internally tied to GND and must be soldered to a dedicated PCB GND copper area ≥25 mm². Thermal resistance drops from 110 °C/W (no pad connection) to 42 °C/W (full pad soldering), enabling continuous 5 A operation at ambient ≤85 °C.
2EDN7534RXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- 1.4V, 1.9V
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 8.6ns, 6ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSSOP-8
2EDN7534RXTMA1 FAQ
1.How can I place an order for 2EDN7534RXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN7534RXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN7534RXTMA1 reliable?
The price and inventory of 2EDN7534RXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN7534RXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN7534RXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN7534RXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN7534RXTMA1?
2EDN7534RXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN7534RXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN7534RXTMA1?
For technical support, including 2EDN7534RXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN7534RXTMA1 requirements.
6.How does Aetrix verify that 2EDN7534RXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN7534RXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN7534RXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN7534RXTMA1?
All 2EDN7534RXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN7534RXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN7534RXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN7534RXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN7534RXTMA1 Tags
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ZXGD3009E6TA
Diodes Incorporated
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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
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MCP1416T-E/OT
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MCP1402T-E/OT
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MCP1415T-E/OT
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MCP1401T-E/OT
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IX4428NTR
Littelfuse Inc.
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IRS2005STRPBF
Infineon Technologies
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IRS2008STRPBF
Infineon Technologies
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IX4310TTR
Littelfuse Inc.
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