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Infineon Technologies 2EDN8523FXTMA1

Part No.:
2EDN8523FXTMA1
Manufacturer:
Infineon Technologies
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
Aetrix2EDN8523FXTMA1.pdf
Description:
IC GATE DRVR LOW-SIDE 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,352

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Product details

Overview

2EDN8523FXTMA1 from Infineon Technologies is a dual-channel, inverting, 8 V UVLO gate driver IC for high-speed MOSFET and GaN power devices, delivering 5 A source/sink per channel, 17 ns propagation delay, 1 ns channel-to-channel matching, and rail-to-rail output stage (0.7 Ω high-side / 0.55 Ω low-side) in PG-DSO-8 package - deployed in server SMPS and LLC resonant converters.

For engineers reviewing the 2EDN8523FXTMA1 datasheet, 2EDN8523FXTMA1 pinout, 2EDN8523FXTMA1 application, or 2EDN8523FXTMA1 equivalent, key selection criteria include UVLO threshold (8 V), inverting logic configuration, -10 V input robustness, reverse current tolerance (5 A), and compatibility with OptiMOS™/CoolMOS™/GaN devices in high-density power stages.

Technical Context

This driver implements independent dual-channel control with LV-TTL/CMOS 3.3 V compatible inputs (-5 V to +20 V range), enabling direct microcontroller interfacing without level-shifting. Each channel features dedicated enable (ENA/ENB) and input (INA/INB) pins, with UVLO monitoring on VDD only.

The architecture supports parallel channel operation via <1 ns inter-channel delay matching and includes true rail-to-rail output stages with 0.7 Ω pull-up and 0.55 Ω pull-down resistance, ensuring fast switching of logic-level and standard-level MOSFETs across 4.5–20 V supply range.

Key Specifications

Parameter Value and Actual Design Meaning
Output Current ±5 A per channel - enables direct drive of high-Qg GaN FETs and Superjunction MOSFETs without external buffers.
Propagation Delay 17 ns typ. - supports >1 MHz switching in ZVS and LLC topologies with tight timing margins.
Channel Matching 1 ns typ. - allows safe paralleling of both outputs for 10 A combined sink/source capability.
UVLO Threshold 8 V - provides higher turn-on margin than 4.2 V variants, improving reliability during brown-out conditions.
Input Voltage Range -5 V to +20 V - withstands -10 V transient on control pins, eliminating latch-up risk in pulse-transformer-driven systems.
Supply Range 4.5 V to 20 V - accommodates wide-input industrial and telecom SMPS rails including 12 V and 15 V bias supplies.
Output Resistance 0.7 Ω (high-side), 0.55 Ω (low-side) - minimizes conduction loss and improves rise/fall time consistency.

Pinout & Package

2EDN8523FXTMA1 is housed in PG-DSO-8 (SOIC-8 wide-body) package with exposed thermal pad (not electrically connected). Pin 1 is ENA; pin 3 is GND; pin 6 is VDD; pin 7 is OUTA; pin 5 is OUTB; pin 8 is ENB; pins 2 and 4 are INA and INB respectively - fully compatible with industry-standard SOIC-8 gate driver footprints.

Pin/Terminal Circuit Role Design Meaning
1 ENA Enable input, Channel A Active-high logic control: low forces OUTA low regardless of INA state; open = enabled.
2 INA Inverting input, Channel A Logic inversion: high input → low output; supports direct MCU GPIO connection (3.3 V LV-TTL).
3 GND Power and signal reference Common return path for VDD, inputs, and outputs; must be low-inductance PCB connection.
4 INB Inverting input, Channel B Independent inverted logic control for second output; identical timing and voltage specs as INA.
5 OUTB Driver output, Channel B Low-impedance push-pull stage capable of ±5 A; connects directly to gate of power device.
6 VDD Positive supply input 4.5–20 V rail powering internal circuitry and output stage; monitored for 8 V UVLO activation.
7 OUTA Driver output, Channel A Matched performance to OUTB: same drive strength, delay, and robustness; supports paralleling.
8 ENB Enable input, Channel B Independent enable for OUTB; decouples channel control for phase-shifted or fault-isolated operation.

Key Features

Feature Design Value
5 A reverse current robustness Eliminates need for external Schottky diodes at outputs, reducing BOM count and layout area in synchronous rectification.
1 ns channel-to-channel delay matching Enables precise parallel operation of both channels for 10 A total drive without skew-induced shoot-through risk.
-10 V input pin ruggedness Prevents latch-up during ground bounce or transformer-coupled gate drive transients, enhancing system-level EMI resilience.
8 V UVLO with fast release Guarantees MOSFET/GaN turn-off before supply collapse, independent of system supervisor timing - critical for overvoltage safety.
Industry-standard SOIC-8 pinout Allows drop-in replacement of legacy drivers (e.g., IR2110 derivatives) without PCB redesign or footprint adaptation.

Applications

Server SMPS Telecom DC-DC Converters

Use Scenario: 48 V input, 12 V/54 A output half-bridge LLC resonant converter in 1U server PSU.

IC Role / Device Role / Timing Role: Dual-channel gate driver controlling primary-side GaN HEMTs with interleaved dead-time management.

Use Value: 17 ns propagation delay and 1 ns matching ensure precise zero-voltage switching across full load range, reducing switching losses by ≥12% vs. 30 ns drivers.

Use Scenario: 54 V input, 12 V/30 A isolated forward converter in telecom brick module.

IC Role / Device Role / Timing Role: Inverting dual driver for synchronous rectification on secondary side with independent ENB control for adaptive dead-time tuning.

Use Value: ±5 A output current and 0.55 Ω pull-down resistance minimize body-diode conduction loss, improving efficiency by 0.8% at 25°C ambient.

Industrial Motor Drives Solar MPPT Converters

Use Scenario: 3-phase inverter stage (200 V bus) for 3 kW BLDC motor control in factory automation.

IC Role / Device Role / Timing Role: High-side/low-side driver pair per phase, using ENA/ENB for hardware fault shutdown during overcurrent events.

Use Value: -10 V input ruggedness prevents false triggering during IGBT switching noise, increasing functional safety compliance margin.

Use Scenario: 1000 V DC input, 400 V DC output two-switch forward converter in string-level solar optimizer.

IC Role / Device Role / Timing Role: Gate driver for CoolMOS™ CFD7 primary switches operating at 250 kHz with adaptive burst-mode control.

Use Value: 8 V UVLO ensures immediate disable during PV string arc-fault detection, meeting UL 1741 SB rapid shutdown requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
2EDN7523FXTMA1 4.2 V UVLO threshold instead of 8 V; otherwise identical pinout, timing, and drive strength. Better suited for low-voltage bias rails (e.g., 5 V auxiliary supplies) where earlier turn-off is required. Select when system brown-out behavior demands faster disable below 5 V - not for 12 V+ bias rails.
UCC27524D Non-inverting logic, 4 A peak output, 13 ns delay, no -10 V input rating, 5 V–18 V supply range. Limited to lower-power applications (<1 kW); lacks reverse current robustness and UVLO flexibility. Choose only for cost-sensitive, non-GaN, ≤400 kHz designs where input ruggedness and paralleling are not required.

Compared with 2EDN7523FXTMA1, the 8 V UVLO offers superior hold-up during line sags; versus UCC27524D, it delivers higher drive strength, tighter timing, and enhanced system-level fault resilience - making it optimal for GaN-based high-density SMPS.

Availability

2EDN8523FXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and automotive-grade reliability validation.

Supply support for 2EDN8523FXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q100.

This part belongs to the EiceDRIVER™ 2EDN family - engineered for high-efficiency, high-frequency switching in SMPS, motor control, and renewable energy systems using Si, SiC, and GaN power devices.

FAQ

Is 2EDN8523FXTMA1 pin-compatible with non-inverting variants like 2EDN8524FXTMA1?

Yes - all 2EDN852x variants share identical PG-DSO-8 pinout and package dimensions. Only logic behavior differs: 2EDN8523F uses inverting inputs (INA/INB high → OUTA/OUTB low), while 2EDN8524F uses direct logic. No PCB change is needed for substitution.

What is the maximum recommended gate resistor value for driving 100 mΩ GaN FETs at 1 MHz?

Based on 5 A peak output and 17 ns propagation delay, Rg should not exceed 2.2 Ω for 100 mΩ GaN devices at 1 MHz to maintain <10 ns rise/fall times and avoid excessive overshoot. Lower values (0.5–1.5 Ω) are preferred for optimal EMI and switching loss balance.

Does the 8 V UVLO apply to both channels independently or to the entire IC?

The 8 V UVLO monitors the single VDD supply pin and disables both output channels simultaneously when VDD drops below threshold. There is no per-channel UVLO - ENA/ENB remain functional but force outputs low during UVLO activation.

Can OUTA and OUTB be paralleled for single-output 10 A drive without external components?

Yes - due to 1 ns typical channel-to-channel propagation delay matching and matched output impedance (0.7 Ω / 0.55 Ω), both outputs can be directly paralleled with shared gate resistor and no balancing components, provided identical PCB trace lengths and thermal layout.

2EDN8523FXTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
EiceDRIVER™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Last Time Buy
Programmable:
Not Verified
Driven Configuration:
Low-Side
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
4.5V ~ 20V
Logic Voltage - VIL, VIH:
1.2V, 1.9V
Current - Peak Output (Source, Sink):
5A, 5A
Input Type:
Inverting
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
5.3ns, 4.5ns
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-8

2EDN8523FXTMA1 FAQ

1.How can I place an order for 2EDN8523FXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2EDN8523FXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2EDN8523FXTMA1 reliable?

The price and inventory of 2EDN8523FXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN8523FXTMA1 is usually 5 days.

3.What payment methods are accepted for 2EDN8523FXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN8523FXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2EDN8523FXTMA1?

2EDN8523FXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2EDN8523FXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2EDN8523FXTMA1?

For technical support, including 2EDN8523FXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN8523FXTMA1 requirements.

6.How does Aetrix verify that 2EDN8523FXTMA1 is sourced from the original manufacturer or authorized distributors?

All 2EDN8523FXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN8523FXTMA1 meets industry standards.

7.What is the process for return or replacement of 2EDN8523FXTMA1?

All 2EDN8523FXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN8523FXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2EDN8523FXTMA1 part is unused and in its original packaging.

Return procedure for 2EDN8523FXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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