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Infineon Technologies 2EDN8523RXTMA1
- Part No.:
- 2EDN8523RXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
2EDN8523RXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:2,860
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Product details
Overview
2EDN8523RXTMA1 from Infineon Technologies is a dual-channel, inverting, 8 V UVLO gate driver IC designed for high-frequency MOSFET and GaN power stage control in SMPS topologies. It delivers 5 A sink/source per channel, 17 ns propagation delay, 1 ns channel-to-channel matching, and -10 V input robustness-enabling parallel channel operation and pulse-transformer interfacing in server and telecom DC-DC converters.
For engineers reviewing the 2EDN8523RXTMA1 datasheet, 2EDN8523RXTMA1 pinout, 2EDN8523RXTMA1 application, or 2EDN8523RXTMA1 equivalent, key selection criteria include UVLO threshold (8 V), inverting logic configuration, TSSOP-8 package compatibility, reverse current robustness (5 A), and rail-to-rail output stage performance under 4.5–20 V supply.
Technical Context
This driver implements independent, LV-TTL/CMOS-compatible (3.3 V) control inputs with -5 V to +20 V absolute input voltage range and -10 V latch-up immunity. Its true rail-to-rail output stage achieves 0.7 Ω high-side and 0.55 Ω low-side on-resistance, enabling efficient switching of OptiMOS™, CoolMOS™, Superjunction MOSFETs, IGBTs, and GaN devices.
The 8 V UVLO ensures immediate shutdown during supply brownout, decoupling protection from external supervisors. Tight 1 ns channel-to-channel delay matching allows safe paralleling of both outputs for 10 A aggregate drive strength without timing skew-induced shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Drive Strength | 5 A sink/source per channel-supports fast turn-on/turn-off of high-Qg GaN and Si MOSFETs without external buffers. |
| Propagation Delay | 17 ns typ.-enables stable operation at >1 MHz switching frequencies in LLC and interleaved PFC designs. |
| Channel Matching | 1 ns typ. channel-to-channel delay-permits parallel use of both outputs for 10 A drive without added dead-time margin. |
| UVLO Threshold | 8 V (rising), 7.5 V (falling)-provides robust gate drive cutoff before MOSFET threshold degradation occurs under low-VDD conditions. |
| Input Voltage Range | -5 V to +20 V-tolerates ground bounce and transformer-coupled drive transients without latch-up. |
| Supply Range | 4.5 V to 20 V-supports wide-input industrial and telecom SMPS rails including 12 V and 15 V bias supplies. |
| Logic Type | Inverting-INA/INB high produces OUTA/OUTB low; matches common controller PWM polarity for synchronous rectification. |
Pinout & Package
2EDN8523RXTMA1 uses the PG-TSSOP-8 package (8-pin, 3.0 × 4.4 mm, 0.65 mm pitch) with exposed thermal pad connected to GND. Pin 1 is ENA; pin numbering follows standard TSSOP orientation (counterclockwise from index mark).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Enable input, Channel A | Active-high logic enable; low forces OUTA low regardless of INA-critical for fault-safe shutdown coordination. |
| 2 INA | Inverting input, Channel A | LV-TTL/CMOS-compatible; high → OUTA low; supports direct connection to microcontroller or PWM controller outputs. |
| 3 GND | Power and signal reference | Primary ground return; exposed pad must be soldered to PCB GND plane for thermal and EMI performance. |
| 4 INB | Inverting input, Channel B | Independent control input for second channel; enables asymmetric or phase-shifted drive in multi-phase topologies. |
| 5 OUTB | Driver output, Channel B | Rail-to-rail, 5 A capable output; drives gate of high-side or low-side switch directly-no external pull-up/down needed. |
| 6 VDD | Positive supply input | 4.5–20 V bias rail; internal UVLO monitors this node; decoupling capacitor required within 5 mm of pin. |
| 7 OUTA | Driver output, Channel A | Matched to OUTB in timing and drive strength; enables precise dead-time control when used with complementary signals. |
| 8 ENB | Enable input, Channel B | Independent enable for Channel B-allows dynamic channel disable for burst-mode or light-load efficiency optimization. |
Key Features
| Feature | Design Value |
|---|---|
| 5 A reverse current robustness | Eliminates need for external Schottky diodes at outputs-reduces BOM count and layout area in synchronous rectifier stages. |
| 1 ns channel-to-channel delay matching | Enables safe parallel operation of both outputs for 10 A peak drive-avoids timing skew-induced shoot-through in high-current half-bridges. |
| -10 V input pin robustness | Prevents latch-up during ground bounce events in through-hole MOSFET layouts or pulse-transformer drive-improves system-level reliability. |
| Industry-standard TSSOP-8 pinout | Direct drop-in replacement for legacy drivers (e.g., IR2110 variants) without PCB redesign-accelerates design reuse and qualification. |
| 8 V UVLO with hysteresis | Guarantees gate drive cutoff before MOSFET VGS(th) drops below safe conduction threshold-prevents linear-mode failure during brownout. |
Applications
| Server SMPS | Telecom DC-DC Converters |
|---|---|
|
Use Scenario: 48 V input, 12 V/50 A output VRM in rack-mounted servers using interleaved LLC topology. IC Role / Device Role / Timing Role: Dual-channel gate driver controlling high-side GaN HEMTs and synchronous rectifiers with precise dead-time management. Use Value: 17 ns propagation delay and 1 ns matching ensure <100 ps effective dead-time uncertainty-minimizing conduction loss while preventing shoot-through. |
Use Scenario: 54 V input, 12 V/30 A isolated brick converter in 5G base station power systems. IC Role / Device Role / Timing Role: Inverting driver for pulse-transformer-isolated gate signals driving CoolMOS™ half-bridge switches. Use Value: -10 V input robustness tolerates >8 V ground bounce across transformer windings-eliminating need for external clamping diodes. |
| Industrial Motor Drives | Solar Microinverters |
|
Use Scenario: 3-phase inverter for 1–3 kW servo drives using discrete IGBT modules. IC Role / Device Role / Timing Role: Dual-channel driver for high-side/low-side IGBT gates with independent ENA/ENB control for safety torque off (STO) compliance. Use Value: 8 V UVLO triggers immediate gate discharge during bus undervoltage-meeting IEC 61800-5-2 functional safety requirements without external supervision. |
Use Scenario: 600 V DC input, 230 V AC output microinverter with full-bridge inverter stage and synchronous rectification. IC Role / Device Role / Timing Role: Gate driver for SiC MOSFETs in high-frequency DC-AC inversion and bidirectional energy transfer paths. Use Value: 5 A sink/source capability sustains >100 kHz switching with 20 nC gate charge devices-enabling >98.5% peak efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2EDN7523RXTMA1 | 4.2 V UVLO threshold instead of 8 V; identical pinout, timing, and drive strength. | Better suited for 5 V bias rails or systems requiring earlier UVLO activation to protect low-threshold SiC devices. | Select when primary supply is ≤6 V or when tighter UVLO hysteresis is required for marginal input conditions. |
| UCC27524ADRTVR | Non-inverting logic, 5 A drive, but only 4.5–18 V supply range and no -10 V input rating. | Lacks pulse-transformer interface robustness and has higher propagation delay (25 ns) limiting >500 kHz use. | Choose only for cost-sensitive, non-isolated 3.3 V controller interfaces where input transient immunity is not critical. |
Compared with 2EDN7523RXTMA1, the 8 V UVLO provides higher noise margin in 12 V-biased telecom systems; versus UCC27524ADRTVR, it offers superior transient immunity and tighter timing for GaN/SiC high-frequency designs.
Availability
2EDN8523RXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and automotive-grade reliability validation.
Supply support for 2EDN8523RXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This device belongs to the EiceDRIVER™ 2EDN family-designed specifically for high-efficiency, high-reliability switching power supplies targeting datacenter, telecom, and renewable energy applications.
FAQ
What is the logic configuration of 2EDN8523RXTMA1?
2EDN8523RXTMA1 features inverting logic: a high signal on INA or INB forces the corresponding output (OUTA or OUTB) low. This matches standard PWM controller output polarity for synchronous rectification and half-bridge configurations. The logic table is confirmed in Infineon's datasheet Rev. 2.7, Table 2.
Does 2EDN8523RXTMA1 support parallel channel operation?
Yes-its 1 ns typical channel-to-channel propagation delay matching enables safe parallel connection of OUTA and OUTB for combined 10 A peak drive. This is validated in the datasheet's "Features" section and supported by rail-to-rail output architecture with matched on-resistances (0.7 Ω high-side, 0.55 Ω low-side).
What package type does 2EDN8523RXTMA1 use?
2EDN8523RXTMA1 uses the PG-TSSOP-8 package (3.0 × 4.4 mm, 0.65 mm pitch) with exposed thermal pad. Pinout matches industry-standard TSSOP-8 layout, and the exposed pad must be soldered to a GND plane for thermal dissipation and EMI control, per datasheet Section 9.2.
Can 2EDN8523RXTMA1 drive GaN transistors directly?
Yes-it delivers 5 A source/sink current with 5 ns slew rate and 17 ns propagation delay, optimized for GaN HEMTs with low gate charge (e.g., <10 nC). Its 4.5–20 V supply range and rail-to-rail output stage allow direct gate drive without level-shifting, as confirmed in the "Typical Applications" and "Electrical Characteristics" sections of the datasheet.
2EDN8523RXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- 1.1V, 1.98V
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 5.3ns, 4.5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSSOP-8
2EDN8523RXTMA1 FAQ
1.How can I place an order for 2EDN8523RXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN8523RXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN8523RXTMA1 reliable?
The price and inventory of 2EDN8523RXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN8523RXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN8523RXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN8523RXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN8523RXTMA1?
2EDN8523RXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN8523RXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN8523RXTMA1?
For technical support, including 2EDN8523RXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN8523RXTMA1 requirements.
6.How does Aetrix verify that 2EDN8523RXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN8523RXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN8523RXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN8523RXTMA1?
All 2EDN8523RXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN8523RXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN8523RXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN8523RXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN8523RXTMA1 Tags
-
ZXGD3009E6TA
Diodes Incorporated
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1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
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MCP1402T-E/OT
Microchip Technology
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MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
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