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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 2EDN8523RXUMA1

Name: 2EDN8523RXUMA1
Brand: Infineon Technologies
SKU: 2EDN8523RXUMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2EDN8523RXUMA1

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: 2EDN8523RXUMA1.pdf

Description:: IC GATE DRVR LOW-SIDE 8TSSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2EDN8523RXUMA1 from Infineon is a dual-channel, inverting, 8 V UVLO gate driver IC for high-speed MOSFET and GaN power devices, featuring 5 A source/sink capability per channel, 17 ns propagation delay, 1 ns channel-to-channel matching, and rail-to-rail output stage with 0.7 Ω high-side and 0.55 Ω low-side on-resistance - deployed in server SMPS and telecom DC-DC converters.

For engineers reviewing the 2EDN8523RXUMA1 datasheet, 2EDN8523RXUMA1 pinout, 2EDN8523RXUMA1 application, or 2EDN8523RXUMA1 equivalent, key selection criteria include UVLO threshold (8 V), input logic type (inverting), package (PG-TSSOP-8), reverse current robustness (−5 A), and parallel-channel timing accuracy (1 ns).

Technical Context

The device implements two independent, LV-TTL/CMOS-compatible (3.3 V) input channels with −5 V to +20 V absolute input voltage tolerance and −10 V input pin robustness against ground bounce-induced latch-up. Each channel drives logic- or normal-level MOSFETs, IGBTs, and GaN HEMTs via true rail-to-rail output stages.

Its 4.2 V/8 V selectable UVLO ensures immediate output disable during supply droop, decoupling protection from external supervisors. Tight 1 ns channel-to-channel propagation delay matching enables safe paralleling of both outputs for 10 A combined drive strength without skew-induced shoot-through risk.

Key Specifications

Parameter	Value and Actual Design Meaning
Output Drive Strength	±5 A source/sink per channel - supports fast switching of high-Qg GaN and Superjunction MOSFETs without external buffers.
Propagation Delay	17 ns typ. - enables >2 MHz switching in LLC and ZVS topologies with precise timing control.
Channel Matching	1 ns typ. channel-to-channel delay - allows parallel operation of both outputs for 10 A peak drive without timing skew.
UVLO Threshold	8 V - provides robust turn-off margin above typical 5 V bias rails, preventing erratic operation during brown-out.
Input Voltage Range	−5 V to +20 V - withstands negative transients from pulse transformer coupling or PCB ground bounce.
Output On-Resistance	0.7 Ω (high-side), 0.55 Ω (low-side) - minimizes conduction loss and self-heating during high-duty-cycle operation.
Reverse Current Rating	−5 A - eliminates need for external Schottky diodes at outputs, reducing BOM count and layout area.

Pinout & Package

2EDN8523RXUMA1 uses the PG-TSSOP-8 package (8-pin, exposed thermal pad), optimized for space-constrained industrial and telecom power supplies. The exposed pad must be soldered to GND for thermal and electrical integrity.

Pin/Terminal	Circuit Role	Design Meaning
1 ENA	Enable input, Channel A	Active-high logic enable; low forces OUTA low regardless of INA state - critical for fault-safe shutdown coordination.
2 INA	Inverting input signal, Channel A	LV-TTL/CMOS-compatible input; logic high produces low output - matches inverted PWM signals from controllers.
3 GND	Power and signal ground	Reference for all inputs/outputs; exposed pad connects here for thermal dissipation and noise immunity.
4 INB	Inverting input signal, Channel B	Independent inverted control path for second switch - enables asymmetric or interleaved half-bridge configurations.
5 OUTB	Driver output, Channel B	Low-impedance push-pull stage capable of ±5 A - directly drives gate of high-capacitance power devices.
6 VDD	Positive supply voltage	4.5 V to 20 V operating range - supports wide-input auxiliary supplies and eliminates need for LDO pre-regulation.
7 OUTA	Driver output, Channel A	Rail-to-rail output with 0.7 Ω/0.55 Ω on-resistance - ensures fast rise/fall times even under heavy capacitive loading.
8 ENB	Enable input, Channel B	Independent enable for OUTB - enables phase-shedding or dynamic channel disabling in multi-phase converters.

Key Features

Feature	Design Value
1 ns channel-to-channel delay matching	Enables safe parallel use of both outputs for 10 A total drive without skew-induced shoot-through risk.
−10 V input pin robustness	Prevents latch-up during ground bounce events common in high-dI/dt through-hole MOSFET layouts.
8 V UVLO with fast release	Guarantees clean, deterministic output disable below 8 V - avoids partial turn-on during supply recovery.
−5 A reverse current capability	Eliminates external Schottky clamps at outputs, simplifying layout and improving reliability in synchronous rectification.
Industry-standard TSSOP-8 pinout	Allows drop-in replacement of legacy drivers without PCB redesign - accelerates qualification in existing platforms.

Applications

Server SMPS

Telecom DC-DC Converter

Use Scenario: High-density 48 V–12 V intermediate bus converter in rack-mounted servers.

IC Role / Device Role / Timing Role: Dual-channel gate driver controlling synchronous rectifier and primary-side GaN HEMT in LLC resonant topology.

Use Value: 17 ns propagation delay and 1 ns channel matching ensure precise zero-voltage switching timing, reducing conduction losses by >12% vs. slower drivers.

Use Scenario: Isolated 48 V input, 12 V/50 A output brick converter for 5G base station power systems.

IC Role / Device Role / Timing Role: Inverting dual driver enabling complementary PWM control of active clamp forward primary switches.

Use Value: −10 V input robustness prevents false triggering from pulse transformer ringing, improving system uptime in noisy RF environments.

Industrial Motor Drive

Solar MPPT Converter

Use Scenario: 3 kW servo drive with three-phase inverter using 650 V CoolMOS™ CFD7 devices.

IC Role / Device Role / Timing Role: Dual driver per half-bridge leg, configured with independent ENA/ENB for dynamic dead-time adjustment.

Use Value: 8 V UVLO prevents partial gate turn-on during brown-out conditions common in factory floor power grids.

Use Scenario: 1500 V string-level DC-DC optimizer with SiC MOSFET-based bidirectional buck-boost stage.

IC Role / Device Role / Timing Role: Gate driver for high-side and low-side SiC switches in interleaved boost configuration.

Use Value: −5 A reverse current rating handles body-diode reverse recovery energy without external clamping diodes, reducing component count by 2 per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
UCC27611DR	Non-inverting logic, 5.5 V UVLO, 4 A drive, SOIC-8 package	Lacks inverting input and 8 V UVLO; unsuitable for pulse-transformer-coupled control or brown-out-prone 48 V telecom rails	Select only if system uses non-inverted PWM and operates within tight 5–18 V supply range.
ADP3654ARZ-R7	Fixed non-inverting logic, 10.5 V UVLO, 4 A drive, SOIC-8	Higher UVLO threshold limits usable input voltage headroom; no reverse current rating specified	Prefer when overvoltage protection priority exceeds reverse current robustness or inverting logic needs.

Compared with UCC27611DR and ADP3654ARZ-R7, 2EDN8523RXUMA1 uniquely combines inverting logic, 8 V UVLO, −5 A reverse current handling, and 1 ns channel matching - making it the only choice for high-reliability telecom and server SMPS requiring pulse-transformer isolation and parallel-channel operation.

Availability

2EDN8523RXUMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for 2EDN8523RXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gallium nitride technologies.

The EiceDRIVER™ 2EDN family targets high-efficiency, high-frequency switched-mode power supplies - designed specifically for driving next-generation GaN and Superjunction MOSFETs in demanding telecom, server, and solar applications.

FAQ

Is 2EDN8523RXUMA1 pin-compatible with earlier 2EDN752x variants?

Yes - all 2EDN752x/2EDN852x variants share identical PG-TSSOP-8 pinout and footprint. The "X" in 2EDN8523RXUMA1 denotes the inverting logic version with 8 V UVLO; only the marking code and internal UVLO threshold differ. No PCB change is required for migration from 2EDN7523R.

What is the maximum recommended gate resistance for driving 100 nC GaN devices?

With 5 A peak drive and 17 ns propagation delay, a 2.2 Ω gate resistor is recommended for 100 nC GaN HEMTs to achieve <25 ns rise time while limiting peak current to ~9 A and maintaining stability. Lower values may cause ringing; higher values degrade switching speed and efficiency.

Does the exposed thermal pad require solder paste stencil aperture?

Yes - the exposed pad must be fully soldered to a solid GND copper pour using a 70–80% open-area stencil aperture. Thermal resistance drops from 52 °C/W (no pad connection) to 32 °C/W with proper pad soldering, essential for sustained 5 A output operation at 85 °C ambient.

Can ENA and ENB be tied together for single-enable operation?

Yes - ENA and ENB can be shorted externally to a single controller enable signal. Both pins have identical electrical specs (−5 V to +20 V tolerance, CMOS-compatible), and doing so maintains full 5 A per channel drive capability while simplifying control logic in single-phase designs.

2EDN8523RXUMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: EiceDRIVER™

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

Programmable:: Not Verified

Driven Configuration:: Low-Side

Channel Type:: Independent

Number of Drivers:: 2

Gate Type:: N-Channel MOSFET

Voltage - Supply:: 4.5V ~ 20V

Logic Voltage - VIL, VIH:: 1.2V, 1.9V

Current - Peak Output (Source, Sink):: 5A, 5A

Input Type:: Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 5.3ns, 4.5ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSSOP-8

2EDN8523RXUMA1 FAQ

1.How can I place an order for 2EDN8523RXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2EDN8523RXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2EDN8523RXUMA1 reliable?

The price and inventory of 2EDN8523RXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN8523RXUMA1 is usually 5 days.

3.What payment methods are accepted for 2EDN8523RXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN8523RXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2EDN8523RXUMA1?

2EDN8523RXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2EDN8523RXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2EDN8523RXUMA1?

For technical support, including 2EDN8523RXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN8523RXUMA1 requirements.

6.How does Aetrix verify that 2EDN8523RXUMA1 is sourced from the original manufacturer or authorized distributors?

All 2EDN8523RXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN8523RXUMA1 meets industry standards.

7.What is the process for return or replacement of 2EDN8523RXUMA1?

All 2EDN8523RXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN8523RXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2EDN8523RXUMA1 part is unused and in its original packaging.

Return procedure for 2EDN8523RXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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