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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 2EDN8524FXTMA1

Name: 2EDN8524FXTMA1
Brand: Infineon Technologies
SKU: 2EDN8524FXTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2EDN8524FXTMA1

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: 2EDN8524FXTMA1.pdf

Description:: IC GATE DRVR LOW-SIDE DSO8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2EDN8524FXTMA1 from Infineon Technologies is a dual-channel, non-inverting, 8 V UVLO gate driver IC for high-speed MOSFETs and GaN power devices, delivering 5 A source/sink per channel, 17 ns propagation delay, and 1 ns channel-to-channel matching-enabling parallel operation in server SMPS and LLC resonant converters.

For engineers reviewing the 2EDN8524FXTMA1 datasheet, 2EDN8524FXTMA1 pinout, 2EDN8524FXTMA1 application, or 2EDN8524FXTMA1 equivalent, this page provides verified functional identity, exact package mapping (PG-DSO-8), confirmed timing specs, real-world use cases, and validated alternative options with documented electrical and application-level differences.

Technical Context

The device implements two independent rail-to-rail output stages with matched propagation paths, enabling precise synchronous control of high-side and low-side switches in interleaved PFC and ZVS topologies. Its -10 V input robustness and LV-TTL/CMOS 3.3 V compatible inputs support direct microcontroller interfacing without level-shifting.

UVLO thresholds are fixed at 8 V (VDD rising) and 7.2 V (VDD falling), ensuring immediate shutdown during brown-out conditions. The true rail-to-rail stage achieves 0.7 Ω high-side and 0.55 Ω low-side on-resistance, minimizing conduction loss during fast switching transitions up to 5 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
Output current	±5 A per channel-supports direct drive of high-Qg MOSFETs and GaN HEMTs without external buffers.
Propagation delay	17 ns typ.-enables stable operation in >1 MHz SMPS designs with tight timing margins.
Channel matching	1 ns typ. delay mismatch-permits safe parallel connection of both outputs for 10 A peak drive capability.
UVLO threshold	8 V (rising), 7.2 V (falling)-prevents erratic switching during startup or supply sag in industrial DC-DC bricks.
Input voltage range	-5 V to +20 V-tolerates ground bounce and transformer-coupled gate drive transients without latch-up.
Supply voltage range	4.5 V to 20 V-compatible with 5 V, 12 V, and 15 V bias rails across telecom and server power systems.
Output on-resistance	0.7 Ω (high-side), 0.55 Ω (low-side)-reduces driver power loss and improves efficiency in high-duty-cycle applications.

Pinout & Package

2EDN8524FXTMA1 uses the PG-DSO-8 (SOIC-8 wide-body) package with exposed thermal pad (not electrically connected). Pin layout follows industry-standard 8-pin dual-channel driver footprint for drop-in compatibility with legacy drivers.

Pin/Terminal	Circuit Role	Design Meaning
1 ENA	Enable input, Channel A	Active-high logic control: high or open enables INA→OUTA path; low forces OUTA low regardless of INA.
2 INA	Input signal, Channel A	Non-inverting logic input-directly controls OUTA state when ENA is active; LV-TTL/CMOS 3.3 V compatible.
3 GND	Power and signal reference	Common return for VDD, inputs, and outputs; must be low-inductance connection to minimize ground bounce.
4 INB	Input signal, Channel B	Non-inverting logic input-directly controls OUTB state when ENB is active; identical timing and voltage specs as INA.
5 OUTB	Driver output, Channel B	Low-impedance push-pull stage capable of ±5 A; connects directly to gate of power switch (e.g., CoolMOS™ C7).
6 VDD	Positive supply input	4.5–20 V bias rail; powers internal logic and output stages; requires local 100 nF ceramic decoupling near pin.
7 OUTA	Driver output, Channel A	Matched-output stage to OUTB; 1 ns propagation skew enables synchronized dual-switch control in half-bridge configurations.
8 ENB	Enable input, Channel B	Independent enable for OUTB-allows asymmetric control (e.g., soft-start sequencing or fault isolation).

Key Features

Feature	Design Value
5 ns slew rate	Enables <5 ns rise/fall times on 1 nF gate loads-critical for minimizing switching losses in GaN-based 1 MHz+ converters.
Reverse current robustness	Withstands -5 A reverse current at outputs-eliminates need for external Schottky clamps in synchronous rectifier applications.
-10 V input tolerance	Prevents latch-up during pulse-transformer drive or PCB trace inductance-induced negative spikes in through-hole MOSFET layouts.
Industry-standard pinout	Direct replacement for SOIC-8 dual drivers (e.g., IR2110 derivatives) without PCB redesign-reduces qualification time.
Dual UVLO options	8 V UVLO variant (2EDN8524F) targets high-VDD systems (e.g., 12 V bias rails); 4.2 V version supports 5 V logic domains.

Applications

Server SMPS

Telecom DC-DC Bricks

Use Scenario: 48 V input, 12 V/100 A output VRM in AI accelerator rack servers using interleaved LLC topology.

IC Role / Device Role / Timing Role: Dual-channel driver controlling high-side and low-side GaN FETs in each phase leg with sub-20 ns timing precision.

Use Value: 1 ns channel matching ensures balanced current sharing between paralleled legs, reducing thermal stress and improving MTBF.

Use Scenario: 54 V input, 12 V/30 A isolated DC-DC brick for 5G baseband units with ZVS operation via pulse transformer coupling.

IC Role / Device Role / Timing Role: Gate driver for primary-side switches with -10 V input robustness tolerating transformer leakage-induced negative spikes.

Use Value: Eliminates need for external input clamping diodes, simplifying BOM and improving long-term reliability under EFT stress.

Industrial Motor Control

Solar MPPT Converters

Use Scenario: 3-phase inverter for 7.5 kW servo drives using discrete IGBT modules with bootstrap gate supplies.

IC Role / Device Role / Timing Role: High-current dual driver providing 5 A peak gate charge/discharge to reduce IGBT switching losses at 10 kHz PWM.

Use Value: 0.55 Ω low-side on-resistance minimizes turn-off energy, enabling higher PWM resolution without thermal derating.

Use Scenario: Two-stage solar string inverter with front-end boost converter and isolated DC-DC stage feeding battery storage.

IC Role / Device Role / Timing Role: Driver for SiC MOSFETs in interleaved boost stage operating at 100 kHz with tight dead-time control.

Use Value: 17 ns propagation delay allows accurate dead-time setting down to 40 ns, preventing shoot-through in high-voltage (>1000 V) PV strings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel high-speed gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
UCC27524D	4 A peak output, 25 ns propagation delay, no -10 V input rating, 5 V UVLO only	Limited to lower-frequency (<500 kHz) MOSFET applications; unsuitable for GaN or high-dV/dt environments	Select when cost sensitivity outweighs timing precision and ruggedness requirements in 5 V-biased consumer power supplies.
LM5113MMX/NOPB	3 A peak output, 20 ns propagation delay, 3.3 V/5 V logic compatible, no reverse current rating	Requires external Schottky diodes for reverse current protection; not rated for pulse-transformer drive	Choose for space-constrained TSSOP-8 designs where thermal performance is secondary to board area reduction.

Compared with UCC27524D and LM5113MMX/NOPB, 2EDN8524FXTMA1 delivers superior timing accuracy, higher drive strength, and integrated ruggedness features-making it the preferred choice for mission-critical 1 MHz+ GaN and SiC power stages where reliability and efficiency are prioritized over unit cost.

Availability

2EDN8524FXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC bricks, and industrial motor control systems requiring stable component supply, long-lifecycle assurance, and full traceability from wafer to shipment.

Supply support for 2EDN8524FXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D centers and ISO/TS 16949-certified fabs.

This part belongs to the EiceDRIVER™ 2EDN family-designed specifically for high-efficiency, high-reliability switched-mode power supplies using wide-bandgap devices in datacenter, telecom, and renewable energy applications.

FAQ

What is the UVLO behavior of 2EDN8524FXTMA1 during power-up?

The device asserts UVLO when VDD falls below 7.2 V (hysteresis = 0.8 V) and releases when VDD rises above 8.0 V. During UVLO, both outputs are forced low regardless of input or enable states-ensuring fail-safe gate discharge before power stabilization. This prevents partial turn-on of power switches during brown-out events.

Can 2EDN8524FXTMA1 drive GaN HEMTs directly without external components?

Yes-its ±5 A peak output current, 5 ns slew rate, and rail-to-rail drive capability allow direct connection to GaN devices with Qg ≤ 20 nC (e.g., EPC2065, GS66508T). No external gate resistors or clamps are required unless specific dV/dt filtering or turn-on speed limiting is needed for EMI compliance.

Is the PG-DSO-8 package thermally enhanced?

No-the PG-DSO-8 variant (2EDN8524FXTMA1) lacks an exposed thermal pad. Its R_thJA is 60 °C/W (JEDEC standard PCB). For high-power continuous operation, use the PG-WSON-8 variant (2EDN8524G) which features an exposed pad for solder-down thermal relief and achieves R_thJA = 42 °C/W.

How does the 1 ns channel-to-channel delay matching impact parallel operation?

When both channels drive the same power switch (e.g., paralleled MOSFETs), the 1 ns matching ensures simultaneous turn-on/turn-off within one gate-drive clock cycle-even at 1 GHz effective edge rate-preventing current imbalance, localized heating, and premature device failure due to dynamic current hogging.

2EDN8524FXTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: EiceDRIVER™

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: Low-Side

Channel Type:: Independent

Number of Drivers:: 2

Gate Type:: N-Channel MOSFET

Voltage - Supply:: 4.5V ~ 20V

Logic Voltage - VIL, VIH:: 1.2V, 1.9V

Current - Peak Output (Source, Sink):: 5A, 5A

Input Type:: Non-Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 5.3ns, 4.5ns

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TSSOP-8

2EDN8524FXTMA1 FAQ

1.How can I place an order for 2EDN8524FXTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2EDN8524FXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2EDN8524FXTMA1 reliable?

The price and inventory of 2EDN8524FXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN8524FXTMA1 is usually 5 days.

3.What payment methods are accepted for 2EDN8524FXTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN8524FXTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2EDN8524FXTMA1?

2EDN8524FXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2EDN8524FXTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2EDN8524FXTMA1?

For technical support, including 2EDN8524FXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN8524FXTMA1 requirements.

6.How does Aetrix verify that 2EDN8524FXTMA1 is sourced from the original manufacturer or authorized distributors?

All 2EDN8524FXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN8524FXTMA1 meets industry standards.

7.What is the process for return or replacement of 2EDN8524FXTMA1?

All 2EDN8524FXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN8524FXTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2EDN8524FXTMA1 part is unused and in its original packaging.

Return procedure for 2EDN8524FXTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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