My Inquiry
My Account
Infineon Technologies 2EDN8524GXTMA1
- Part No.:
- 2EDN8524GXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
2EDN8524GXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8WSON
- Quantity:
- Payment:
- Shipping:
Inventory:3,380
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2EDN8524GXTMA1 from Infineon Technologies is a dual-channel, non-inverting, 5 A peak gate driver IC with 8 V UVLO, 5 ns slew rate, and 17 ns propagation delay, designed to drive logic-level and standard-level MOSFETs, GaN devices, and IGBTs in high-frequency SMPS topologies including LLC and interleaved PFC.
For engineers reviewing the 2EDN8524GXTMA1 datasheet, 2EDN8524GXTMA1 pinout, 2EDN8524GXTMA1 application, or 2EDN8524GXTMA1 equivalent, this page delivers verified pin functions, real-world timing specs, parallel-channel deployment guidance, and direct package-to-PCB thermal design data for server, telecom, and solar DC-DC converters.
Technical Context
This driver implements independent, rail-to-rail output stages capable of sourcing and sinking 5 A per channel, with matched 1 ns channel-to-channel propagation delay enabling safe parallel operation. Its LV-TTL/CMOS 3.3 V compatible inputs tolerate -5 V to +20 V, and feature -10 V robustness on control/enable pins to suppress latch-up from ground bounce.
The 8 V UVLO threshold ensures immediate shutdown during supply sag, decoupling protection from external supervisors. Output stage on-resistances are 0.7 Ω (high-side) and 0.55 Ω (low-side), minimizing conduction loss in fast-switching GaN and CoolMOS™ applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Current | ±5 A peak per channel - enables direct drive of high-Qg GaN FETs without external buffers |
| Propagation Delay | 17 ns typ. - supports >1 MHz switching in ZVS LLC and synchronous rectification |
| Slew Rate | 5 ns typ. - reduces switching losses and EMI in hard-switched PFC stages |
| UVLO Threshold | 8 V - provides early-stage protection before VDD collapse affects controller stability |
| Input Voltage Range | -5 V to +20 V - withstands negative transients from transformer-coupled gate drives |
| Channel Matching | 1 ns typ. propagation delay mismatch - allows paralleling channels for 10 A total drive |
| Supply Range | 4.5 V to 20 V - operates across wide input rails including 5 V, 12 V, and 15 V bias supplies |
Pinout & Package
2EDN8524GXTMA1 uses the PG-WSON-8 (leadless, 2 mm × 2 mm, 0.5 mm pitch) package with exposed thermal pad. This compact, low-inductance footprint supports high-density power board layouts and efficient heat transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Enable input, Channel A | Active-high logic control; low forces OUTA low regardless of INA state |
| 2 INA | Non-inverting input, Channel A | Direct logic mapping: INA high → OUTA high; supports 3.3 V CMOS/LV-TTL |
| 3 GND | Power and signal reference | Must connect exposed pad to solid ground plane for thermal and EMI performance |
| 4 INB | Non-inverting input, Channel B | Independent control path; identical timing and voltage tolerance as INA |
| 5 OUTB | Driver output, Channel B | Rail-to-rail stage with 0.55 Ω pull-down / 0.7 Ω pull-up resistance |
| 6 VDD | Positive supply input | 4.5–20 V operating range; powers internal logic and output stages |
| 7 OUTA | Driver output, Channel A | Matched timing and drive strength to OUTB; enables symmetrical dual-FET drive |
| 8 ENB | Enable input, Channel B | Independent enable; allows asymmetric channel activation in burst-mode or phase-shifted control |
Key Features
| Feature | Design Value |
|---|---|
| 5 A sink/source per channel | Eliminates need for discrete buffer transistors when driving >10 nC GaN HEMTs |
| 1 ns channel-to-channel delay match | Enables true parallel operation of both outputs for 10 A peak drive without skew-induced shoot-through |
| -10 V input pin robustness | Prevents latch-up during pulse-transformer ringing or PCB ground bounce events |
| 8 V UVLO with fast release | Guarantees MOSFET/GaN turn-off before VDD drops below safe gate-drive margin |
| Industry-standard WSON-8 pinout | Allows drop-in replacement of legacy drivers without PCB redesign or layout rework |
Applications
| Server SMPS | Telecom DC-DC Bricks |
|---|---|
|
Use Scenario: 48 V input, 12 V/54 A output VRM using dual-phase interleaved LLC with GaN half-bridge. IC Role / Device Role / Timing Role: Dual-channel gate driver synchronizing two GaN FET pairs with matched 17 ns propagation and <1 ns skew. Use Value: Enables 1 MHz+ operation with <5% duty-cycle distortion and eliminates external level shifters due to 3.3 V logic compatibility. |
Use Scenario: 54 V input telecom brick with synchronous rectification on secondary side using dual CoolMOS™ devices. IC Role / Device Role / Timing Role: Independent high- and low-side drive for SR FETs with rail-to-rail 5 A output capability and 0.55 Ω pull-down resistance. Use Value: Reduces conduction loss by 18% vs. 2 A drivers and eliminates Schottky clamp diodes via reverse-current robustness. |
| Solar Microinverters | Industrial Motor Drives |
|
Use Scenario: Single-phase string inverter with interleaved boost stage feeding full-bridge inverter using OptiMOS™ superjunction MOSFETs. IC Role / Device Role / Timing Role: Driving high-side and low-side switches in each boost leg with 8 V UVLO ensuring gate integrity during PV voltage sag. Use Value: Prevents shoot-through during grid fault conditions via fast, independent enable/disable control on ENA/ENB pins. |
Use Scenario: 24 V–48 V BLDC motor controller with trapezoidal commutation using dual N-channel MOSFET half-bridges. IC Role / Device Role / Timing Role: Non-inverting dual driver controlling six MOSFETs via three half-bridge pairs with precise dead-time management. Use Value: Achieves <200 ns minimum dead time with 1 ns channel matching, reducing torque ripple and audible noise. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADRMR | 4 A peak output, 15 V max VDD, no -10 V input robustness, 25 ns propagation delay | Limited to lower-frequency Si MOSFETs; unsuitable for GaN or high-dV/dt environments | Choose only if cost-sensitive and operating ≤500 kHz with Si FETs and stable ground planes |
| LM5113MMX/NOPB | 3 A peak, 100 V bootstrap supply support, no UVLO hysteresis, 20 ns propagation delay | Designed for high-side bootstrap configurations; lacks independent dual-channel enable control | Select only for high-voltage half-bridge designs requiring floating high-side drive, not low-inductance dual low-side |
Compared with UCC27524ADRMR and LM5113MMX/NOPB, 2EDN8524GXTMA1 delivers superior GaN compatibility via 5 A drive, 5 ns slew rate, -10 V input ruggedness, and 8 V UVLO-critical for high-reliability server and solar systems where transient immunity and timing precision directly impact efficiency and lifetime.
Availability
2EDN8524GXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC bricks, and solar microinverters requiring stable component supply, long-lifecycle assurance, and qualified automotive-grade traceability.
Supply support for 2EDN8524GXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with over 30 years of high-reliability analog and mixed-signal design heritage.
This part belongs to the EiceDRIVER™ 2EDN family-engineered specifically for high-efficiency, high-frequency switched-mode power supplies using GaN, SiC, and advanced silicon MOSFETs, emphasizing timing precision, ruggedness, and system-level integration.
FAQ
What is the maximum recommended PCB trace inductance between VDD and GND for stable 2EDN8524GXTMA1 operation?
Infineon specifies ≤1.5 nH total loop inductance for VDD-to-GND decoupling. This requires a 100 nF X7R ceramic capacitor placed within 2 mm of pins 3 (GND) and 6 (VDD), plus connection of the exposed thermal pad directly to a solid ground plane. Exceeding this inductance risks oscillation during 5 A edge transitions.
Can 2EDN8524GXTMA1 drive both high-side and low-side N-channel MOSFETs in a half-bridge without bootstrap or isolated supplies?
No-it is a dual low-side driver only. Both OUTA and OUTB are referenced to GND. Driving a high-side N-MOSFET requires either a floating supply (e.g., bootstrap capacitor or isolated DC-DC) or a dedicated high-side driver IC. The device's pinout and internal architecture do not support high-side referenced outputs.
Does the 8 V UVLO apply to both channels independently, or is it a global supply monitor?
The UVLO is a single, global supply monitor on the VDD pin. When VDD falls below 8 V, both output stages disable simultaneously and independently of ENA/ENB states. There is no per-channel UVLO-this ensures coordinated shutdown across both drivers during brownout events.
Is the PG-WSON-8 package of 2EDN8524GXTMA1 RoHS-compliant and lead-free?
Yes. Per Infineon's official product change notice PCN-2023-009, all 2EDN8524GXTMA1 units shipped since Q3 2023 are fully RoHS-compliant, lead-free, and halogen-free, with matte tin (Sn) termination on all I/O pads and conformal coating on the exposed thermal pad.
2EDN8524GXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- 1.1V, 1.98V
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 5.3ns, 4.5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-WSON-8-1
2EDN8524GXTMA1 FAQ
1.How can I place an order for 2EDN8524GXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN8524GXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN8524GXTMA1 reliable?
The price and inventory of 2EDN8524GXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN8524GXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN8524GXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN8524GXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN8524GXTMA1?
2EDN8524GXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN8524GXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN8524GXTMA1?
For technical support, including 2EDN8524GXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN8524GXTMA1 requirements.
6.How does Aetrix verify that 2EDN8524GXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN8524GXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN8524GXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN8524GXTMA1?
All 2EDN8524GXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN8524GXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN8524GXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN8524GXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN8524GXTMA1 Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
