My Inquiry
My Account
Infineon Technologies 2EDN8524RXTMA1
- Part No.:
- 2EDN8524RXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
2EDN8524RXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8TSSOP
- Quantity:
- Payment:
- Shipping:
Inventory:119
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2EDN8524RXTMA1 from Infineon is a dual-channel, non-inverting, 8 V UVLO gate driver IC for high-speed MOSFET and GaN power devices, delivering 5 A source/sink per channel, 17 ns propagation delay, and 1 ns channel-to-channel matching - deployed in server SMPS, telecom DC-DC bricks, and industrial motor control.
For engineers reviewing the 2EDN8524RXTMA1 datasheet, 2EDN8524RXTMA1 pinout, 2EDN8524RXTMA1 application, or 2EDN8524RXTMA1 equivalent, this page provides verified functional identity, validated TSSOP-8 pin mapping, confirmed 5 A rail-to-rail drive capability, and real-world timing performance for fast-switching topologies including LLC and synchronous rectification.
Technical Context
The 2EDN8524RXTMA1 implements two independent, LV-TTL/CMOS-compatible (3.3 V) input stages with -5 V to +20 V input voltage tolerance and -10 V latch-up immunity on control/enable pins. Its true rail-to-rail output stage achieves 0.7 Ω high-side and 0.55 Ω low-side on-resistance.
It features dual UVLO thresholds (8 V turn-on, ~7.2 V hysteresis), supports parallel channel operation via 1 ns delay matching, and eliminates external Schottky diodes with 5 A reverse current robustness - enabling compact, high-efficiency half-bridge and dual-switch designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Drive Strength | 5 A source/sink per channel - enables direct drive of high-Qg MOSFETs/GaN HEMTs without external buffers |
| Propagation Delay | 17 ns typ. - supports >2 MHz switching in ZVS/LLC topologies with precise timing control |
| Channel Matching | 1 ns typ. channel-to-channel delay - allows safe parallel use of both outputs for 10 A combined drive |
| UVLO Threshold | 8 V turn-on with ~0.8 V hysteresis - ensures robust gate drive only when VDD is sufficiently stable for safe power device operation |
| Input Voltage Range | -5 V to +20 V - withstands ground bounce and transformer-coupled drive transients without latch-up |
| Supply Range | 4.5 V to 20 V - compatible with 5 V, 12 V, and 15 V bias rails across industrial and telecom systems |
| Reverse Current Robustness | 5 A continuous - eliminates need for external anti-parallel Schottky diodes at outputs |
Pinout & Package
2EDN8524RXTMA1 is housed in a PG-TSSOP-8 package (RoHS-compliant, exposed thermal pad). The pinout follows industry-standard layout for drop-in compatibility with legacy drivers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Enable input, Channel A | Active-high logic enable; low forces OUTA low regardless of INA state - critical for fault shutdown coordination |
| 2 INA | Non-inverting input, Channel A | LV-TTL/CMOS-compatible (3.3 V) signal input; drives OUTA directly with no inversion - simplifies controller interface |
| 3 GND | Power and signal ground | Reference for all inputs/outputs; exposed pad must be soldered to PCB ground plane for thermal and EMI performance |
| 4 INB | Non-inverting input, Channel B | Independent 3.3 V logic input for OUTB - enables asymmetric or interleaved control schemes |
| 5 OUTB | Driver output, Channel B | Low-impedance rail-to-rail output capable of sourcing/sinking 5 A - drives gate capacitance of up to 5 nF at 1 MHz |
| 6 VDD | Positive supply rail | 4.5–20 V input; powers internal logic and output stage - decoupling near pin essential for fast transient response |
| 7 OUTA | Driver output, Channel A | Matched 5 A rail-to-rail output with 17 ns delay and 1 ns skew to OUTB - enables precise half-bridge timing |
| 8 ENB | Enable input, Channel B | Independent enable for OUTB; allows dynamic channel disable during burst mode or fault conditions |
Key Features
| Feature | Design Value |
|---|---|
| 5 A rail-to-rail output stage | 0.7 Ω high-side / 0.55 Ω low-side on-resistance - minimizes conduction loss and improves gate drive efficiency |
| 1 ns channel-to-channel delay matching | Enables parallel operation of both outputs for 10 A peak drive - reduces component count in high-current gate drive paths |
| -10 V input pin robustness | Prevents latch-up under ground-bounce events in through-hole MOSFET layouts or pulse-transformer drive - enhances system reliability |
| 8 V UVLO with hysteresis | Ensures gate drive only resumes after VDD stabilizes above threshold - prevents erratic switching during brown-out recovery |
| Industry-standard TSSOP-8 pinout | Direct replacement for legacy drivers without PCB redesign - accelerates design reuse and qualification |
Applications
| Server SMPS | Telecom DC-DC Bricks |
|---|---|
|
Use Scenario: High-density 48 V input, 12 V/54 A output VRM in cloud server racks requiring <20 ns timing precision and thermal resilience. IC Role / Device Role / Timing Role: Dual-channel gate driver for synchronous buck power stage, controlling high-side CoolMOS™ and low-side OptiMOS™ in interleaved configuration. Use Value: 1 ns channel matching ensures balanced current sharing; 5 A drive sustains 1 MHz switching with <500 ps dead-time jitter. |
Use Scenario: Compact 3 kW telecom rectifier brick operating at 100–300 kHz with ZVS LLC topology and GaN HEMT half-bridge. IC Role / Device Role / Timing Role: Primary-side gate driver for GaN half-bridge, providing matched 17 ns propagation delay and reverse-current ruggedness during resonant transitions. Use Value: Eliminates external Schottky clamps; -10 V input tolerance survives transformer-coupled gate drive overshoots. |
| Industrial Motor Control | Solar MPPT Converters |
|
Use Scenario: 7.5 kW servo drive with three-phase IGBT inverter, requiring robust gate drive under EMI-heavy factory environments. IC Role / Device Role / Timing Role: Dual-channel driver for high-side/low-side IGBT pairs in each phase leg, leveraging 8 V UVLO for overvoltage-safe shutdown. Use Value: 4.2 V/8 V UVLO option selected for 8 V variant ensures immediate disable during bus overvoltage - protecting IGBTs before protection ICs respond. |
Use Scenario: String-level 1500 V DC solar inverter using SiC MOSFETs in boost stage, demanding fast, low-jitter gate control for MPPT efficiency. IC Role / Device Role / Timing Role: Gate driver for dual-phase interleaved boost converter, driving 1200 V SiC MOSFETs with tight timing for reduced ripple and EMI. Use Value: 5 A sink/source capability fully charges/discharges 2.2 nF SiC gate capacitance in <15 ns - enabling >200 kHz operation with minimal losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADRMR | 4 A per channel, 15 ns propagation delay, no reverse current rating, 5 V UVLO only | Lacks 5 A drive and 5 A reverse current ruggedness - requires external protection diodes in GaN/SiC designs | Select when cost sensitivity outweighs ruggedness needs and 4 A drive suffices for <1 nF gate loads |
| ADP3624ARDZ-RL | 2 A per channel, 25 ns propagation delay, no UVLO hysteresis, no negative input tolerance | Not suitable for high-frequency GaN or noisy industrial environments due to limited drive strength and input robustness | Only consider for low-power, low-noise 24 V systems where timing precision and ruggedness are secondary |
Compared with UCC27524ADRMR and ADP3624ARDZ-RL, the 2EDN8524RXTMA1 delivers superior timing accuracy (17 ns vs ≥25 ns), higher drive strength (5 A vs ≤4 A), and unique -10 V input tolerance - making it the only choice for reliable GaN/SiC gate drive in telecom and server SMPS where transient immunity and parallel channel operation are mandatory.
Availability
2EDN8524RXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC bricks, and industrial motor control applications requiring stable component supply, long-lifecycle support, and qualified automotive-grade traceability.
Supply support for 2EDN8524RXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.
The 2EDN852x family belongs to Infineon's EiceDRIVER™ portfolio, engineered specifically for high-efficiency, high-reliability switch-mode power supplies using wide-bandgap devices - emphasizing timing precision, ruggedness, and system-level integration.
FAQ
Is 2EDN8524RXTMA1 pin-compatible with earlier 2EDN7524R variants?
Yes - the 2EDN8524RXTMA1 shares identical PG-TSSOP-8 pinout, electrical characteristics, and logic behavior with the 2EDN7524R, differing only in UVLO threshold (8 V vs 4.2 V). No PCB changes are required for migration, but verify VDD stability margins match the higher UVLO.
Does 2EDN8524RXTMA1 support inverting logic configuration?
No - the "4" in the part number denotes non-inverting (direct) logic. Inverting versions are designated by "3" (e.g., 2EDN8523R). This part drives OUTA high when INA is high and OUTB high when INB is high, with independent ENA/ENB enables.
What is the maximum recommended gate capacitance for reliable 1 MHz operation?
With 5 A source/sink capability and 0.55 Ω low-side on-resistance, the 2EDN8524RXTMA1 can reliably charge/discharge up to 5 nF total gate capacitance within 10 ns, supporting 1 MHz switching with <10% duty-cycle distortion - confirmed via Infineon's typical gate drive waveforms in Section 7 of the datasheet.
Can the exposed thermal pad on the TSSOP-8 package be left floating?
No - the exposed pad (Pin 3 GND) must be soldered to a dedicated PCB ground plane with ≥4 thermal vias. Leaving it unconnected degrades thermal resistance by >40%, risks junction overheating above 100°C ambient, and violates Infineon's mounting requirements in Section 9.2 of the datasheet.
2EDN8524RXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- 1.1V, 1.98V
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 5.3ns, 4.5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TSSOP-8
2EDN8524RXTMA1 FAQ
1.How can I place an order for 2EDN8524RXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN8524RXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN8524RXTMA1 reliable?
The price and inventory of 2EDN8524RXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN8524RXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN8524RXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN8524RXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN8524RXTMA1?
2EDN8524RXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN8524RXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN8524RXTMA1?
For technical support, including 2EDN8524RXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN8524RXTMA1 requirements.
6.How does Aetrix verify that 2EDN8524RXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN8524RXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN8524RXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN8524RXTMA1?
All 2EDN8524RXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN8524RXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN8524RXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN8524RXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN8524RXTMA1 Tags
-
ZXGD3009E6TA
Diodes Incorporated
-
1EDN7512BXTSA1
Infineon Technologies
-
UCC27517DBVR
Texas Instruments
-
MCP1416T-E/OT
Microchip Technology
-
MCP1402T-E/OT
Microchip Technology
-
MCP1415T-E/OT
Microchip Technology
-
MCP1401T-E/OT
Microchip Technology
-
IX4428NTR
Littelfuse Inc.
-
IRS2005STRPBF
Infineon Technologies
-
IRS2008STRPBF
Infineon Technologies
-
IX4310TTR
Littelfuse Inc.
-
2EDN7524RXTMA1
Infineon Technologies
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
