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Infineon Technologies 2EDN8533FXTMA1
- Part No.:
- 2EDN8533FXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
2EDN8533FXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:2,418
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Product details
Overview
2EDN8533FXTMA1 from Infineon Technologies is a dual-channel, inverting-input, 5 A low-side gate driver IC in PG-DSO-8 package, designed for fast-switching MOSFET/IGBT control in power converters. It delivers ±5 A peak source/sink current, 19 ns typical propagation delay with ±6/−4 ns accuracy, and features active output voltage clamping, 4 V UVLO, and −12 V input robustness - enabling reliable synchronous rectification in DC-DC converters.
For engineers reviewing the 2EDN8533FXTMA1 datasheet, 2EDN8533FXTMA1 pinout, 2EDN8533FXTMA1 application, or 2EDN8533FXTMA1 equivalent, key selection criteria include inverting logic configuration, DSO-8 thermal performance, tight timing skew between channels, and compatibility with 4.5–20 V supply rails in high-frequency SMPS designs.
Technical Context
This IC implements two independent, inverting low-side drivers with dedicated enable inputs (ENA/ENB) and shared VDD/GND. Each channel uses a robust CMOS output stage with active clamp diodes to suppress negative voltage transients at OUTA/OUTB during fast turn-off of power switches.
UVLO operates at 4 V (turn-on) / 3.5 V (turn-off) with hysteresis, ensuring clean startup and shutdown. Propagation delay matching between channels is ≤1 ns, and output rise/fall times are <10 ns (typ.) under 1 nF capacitive load - critical for minimizing shoot-through risk in half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Output Current | ±5 A - drives high-Qg MOSFETs up to 1 MHz switching frequency without external buffers. |
| Propagation Delay | 19 ns typ. - enables precise timing alignment in multi-phase interleaved converters. |
| Delay Accuracy | +6/−4 ns - ensures consistent channel-to-channel timing for balanced current sharing. |
| UVLO Threshold | 4 V (ON), 3.5 V (OFF) - prevents erratic operation during brown-out or soft-start conditions. |
| Supply Voltage Range | 4.5 V to 20 V - supports wide-input industrial DC-DC and PFC stages using single-supply bias. |
| Input Robustness | −12 V - tolerates negative transient coupling on INA/INB in noisy power environments. |
| Output Start-up Time | 1.8 µs - limits inrush current during system power-up without delaying control loop response. |
Pinout & Package
2EDN8533FXTMA1 is housed in PG-DSO-8 (8-pin exposed-pad SOIC) package, rated for industrial temperature range (−40 °C to +125 °C) and qualified per JEDEC JESD47. Thermal resistance θJA = 50 K/W (standard PCB layout).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Enable input for channel A | High or open → OUTA follows inverted INA; low → forces OUTA low regardless of INA state. |
| 2 INA | Inverting logic input for channel A | Low → OUTA high; high → OUTA low - direct interface to PWM controllers or microcontrollers. |
| 3 GND | Power and signal reference ground | Must be low-inductance connection to minimize ground bounce during 5 A switching transitions. |
| 4 INB | Inverting logic input for channel B | Independent control path mirroring INA functionality for dual-switch topologies. |
| 5 OUTB | Low-side driver output B | Capable of ±5 A sink/source into MOSFET gate; includes internal clamp to limit negative swing below GND. |
| 6 VDD | Positive supply rail | 4.5–20 V input; decoupling capacitor required within 5 mm for stable high-speed operation. |
| 7 OUTA | Low-side driver output A | Matched timing and drive strength to OUTB; supports parallel operation with minimal skew. |
| 8 ENB | Enable input for channel B | Independent enable control allows phase-shedding or fault isolation per channel. |
Key Features
| Feature | Design Value |
|---|---|
| Active output voltage clamping | Clamps OUTA/OUTB to −2.5 V (min) during fast turn-off, eliminating need for external Schottky diodes. |
| Tight propagation delay matching | ≤1 ns inter-channel skew ensures symmetrical dead-time implementation in half-bridge drivers. |
| Reverse current robustness | Withstands 5 A reverse current at outputs - protects against Miller-induced shoot-through during hard commutation. |
| Industrial qualification | Fully qualified per JEDEC standards for 15-year lifetime in harsh thermal cycling and humidity environments. |
| Low-output resistance | RDS(on) < 0.5 Ω (source/sink) - minimizes gate drive loss and improves efficiency in high-duty-cycle applications. |
Applications
| Switch-Mode Power Supply | Synchronous Rectification |
|---|---|
|
Use Scenario: Primary-side half-bridge in isolated LLC resonant converter operating at 300–500 kHz. IC Role / Device Role / Timing Role: Low-side gate driver for two N-channel MOSFETs in complementary switching mode, synchronized to controller's PWM signals. Use Value: 19 ns propagation delay and ≤1 ns channel skew ensure accurate dead-time control, reducing conduction losses by >3% vs. slower drivers. |
Use Scenario: Secondary-side synchronous rectifier in 48 V–12 V isolated DC-DC module for telecom base stations. IC Role / Device Role / Timing Role: Dual inverting driver controlling two paralleled MOSFETs per output leg, driven by isolated gate drive transformers. Use Value: ±5 A drive strength reduces gate charge time to <20 ns, enabling full utilization of low-RDS(on) Si MOSFETs at 1 MHz. |
| Power Factor Correction | Motor Drive Half-Bridge |
|
Use Scenario: Boost PFC stage in 3 kW server PSU with interleaved dual-phase topology. IC Role / Device Role / Timing Role: Independent low-side driver for each boost switch, with separate ENA/ENB for phase management and fault shutdown. Use Value: 4 V UVLO and −12 V input tolerance prevent false triggering during AC line dips or EMI bursts near rectifier stage. |
Use Scenario: Gate driving for low-voltage BLDC motor inverter (24 V bus) with space-constrained PCB layout. IC Role / Device Role / Timing Role: Compact DSO-8 package provides dual-channel drive with integrated thermal pad for 2 W dissipation at 100 kHz PWM. Use Value: Active output clamping eliminates external negative voltage protection components, saving >3 mm² board area per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2EDN7533FXTMA1 | Same pinout and timing, but 4 A peak output current instead of 5 A. | Limited to lower-Qg MOSFETs or <800 kHz switching; reduced thermal margin at full load. | Select when gate charge requirements are ≤35 nC and cost optimization is prioritized over headroom. |
| UCC27531DR | Single-channel, non-inverting, 5 A driver in SOIC-8; no enable pins or UVLO hysteresis. | Requires two units and external logic for dual-channel inverting operation; lacks integrated clamp. | Choose only if existing design uses TI ecosystem and discrete enable/UVLO circuitry is already present. |
Compared with 2EDN7533FXTMA1, this part offers higher drive strength for demanding high-frequency MOSFETs; versus UCC27531DR, it delivers true dual-channel integration, inverting logic, and active clamping - reducing component count and improving reliability in compact power stages.
Availability
2EDN8533FXTMA1 is available at Aetrix Electronics and suitable for switch-mode power supplies, synchronous rectification stages, and power factor correction systems requiring stable component supply across extended industrial temperature ranges and long production lifecycles.
Supply support for 2EDN8533FXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This device belongs to the EiceDRIVER™ 2EDN family - engineered specifically for high-efficiency, high-reliability low-side gate driving in industrial and telecom power conversion systems where timing precision and ruggedness are critical.
FAQ
What logic configuration does 2EDN8533FXTMA1 implement?
2EDN8533FXTMA1 uses inverting input logic: a low signal on INA or INB results in a high output on OUTA or OUTB respectively. This matches standard PWM controller outputs that assert active-low gate drive signals. The "3" in the part number explicitly denotes inverting configuration per Infineon's naming convention.
Does this IC require external bootstrap or level-shift circuitry?
No - 2EDN8533FXTMA1 is a low-side-only driver and operates with referenced ground outputs. It does not support high-side floating operation and therefore requires no bootstrap capacitors, level shifters, or isolated supplies. All inputs and outputs share the same GND potential.
Can ENA and ENB be tied together for simultaneous channel control?
Yes - ENA and ENB may be connected to a common enable signal without adverse interaction. Doing so maintains matched timing behavior across both channels and simplifies control logic in single-enable applications such as system-level fault shutdown or soft-start sequencing.
What is the maximum recommended capacitive load for stable operation?
Infineon specifies stable operation up to 5 nF total output capacitance (including MOSFET Ciss, PCB trace, and probe loading). At 1 nF, rise/fall times remain <10 ns; beyond 3 nF, propagation delay increases by ≤2 ns and overshoot may exceed 10% without damping resistors.
2EDN8533FXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- 1.4V, 1.9V
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 8.6ns, 6ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
2EDN8533FXTMA1 FAQ
1.How can I place an order for 2EDN8533FXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN8533FXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN8533FXTMA1 reliable?
The price and inventory of 2EDN8533FXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN8533FXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN8533FXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN8533FXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN8533FXTMA1?
2EDN8533FXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN8533FXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN8533FXTMA1?
For technical support, including 2EDN8533FXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN8533FXTMA1 requirements.
6.How does Aetrix verify that 2EDN8533FXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN8533FXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN8533FXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN8533FXTMA1?
All 2EDN8533FXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN8533FXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN8533FXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN8533FXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN8533FXTMA1 Tags
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ZXGD3009E6TA
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IX4428NTR
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