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Infineon Technologies 2EDN8534FXTMA1
- Part No.:
- 2EDN8534FXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
2EDN8534FXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,535
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Product details
Overview
2EDN8534FXTMA1 from Infineon Technologies is a dual-channel, non-inverting, low-side gate driver IC with ±5 A peak output current, 19 ns typical propagation delay, and 4 V undervoltage lockout (UVLO), housed in an 8-pin DSO package. It drives N-channel MOSFETs in high-frequency synchronous rectification and DC-DC converter topologies where tight timing accuracy and robust input tolerance (−12 V) are critical.
For engineers reviewing the 2EDN8534FXTMA1 datasheet, 2EDN8534FXTMA1 pinout, 2EDN8534FXTMA1 application, or 2EDN8534FXTMA1 equivalent, key selection criteria include propagation delay matching across channels, active output voltage clamping for shoot-through prevention, UVLO hysteresis margin, and compatibility with 3.3 V/5 V logic inputs under industrial temperature range (−40 °C to +125 °C).
Technical Context
This IC implements independent dual-channel control with separate enable (ENA/ENB) and input (INA/INB) pins per channel, enabling asymmetric drive sequencing and fault isolation. Its internal logic ensures both outputs go low during UVLO events or when either enable pin is asserted low - a hard fail-safe behavior verified across JEDEC industrial qualification.
The driver uses optimized CMOS output stages with <1 Ω typical output resistance, enabling fast MOSFET turn-on/turn-off (1.8 µs start-up, 500 ns shut-down) while maintaining <±4 ns inter-channel propagation delay skew. Active output voltage clamping limits negative transients to −2.5 V, protecting gate oxide during inductive switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Output Current | ±5 A source/sink - drives high-Qg MOSFETs at >1 MHz switching without external boost components |
| Propagation Delay | 19 ns typ. - enables precise timing alignment in multi-phase power stages |
| Delay Accuracy | +6/−4 ns - guarantees ≤10 ns inter-channel skew for balanced current sharing |
| UVLO Threshold | 4 V (rising), 3.4 V (falling) - prevents erratic operation during brown-out conditions |
| Supply Voltage Range | 4.5 V to 20 V - supports wide-input DC-DC designs including 12 V and 15 V bus systems |
| Input Robustness | −12 V tolerance - withstands negative transient coupling on INA/INB in noisy power environments |
| Output Shut-down Time | 500 ns - minimizes dead-time uncertainty during fault recovery or mode transitions |
Pinout & Package
2EDN8534FXTMA1 is packaged in PG-DSO-8 (8-pin exposed-pad SOIC), with thermal pad soldered to PCB ground for enhanced power dissipation. Pin layout follows standard DSO-8 top-view orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Channel A enable input | Active-high logic; open-drain compatible; forces OUTA low when pulled low or floating |
| 2 INA | Channel A input signal | Non-inverting logic input; accepts 3.3 V/5 V TTL/CMOS levels with −12 V fault tolerance |
| 3 GND | Power and signal reference ground | Common return path for VDD, outputs, and internal logic; must be low-inductance connection |
| 4 INB | Channel B input signal | Non-inverting logic input; electrically isolated from INA but shares same UVLO and supply domain |
| 5 OUTB | Channel B low-side driver output | ±5 A capable push-pull stage; clamped to −2.5 V during negative transients |
| 6 VDD | Positive supply input | 4.5–20 V operating range; bypass capacitor required between VDD and GND near pin |
| 7 OUTA | Channel A low-side driver output | Independent ±5 A output with matched timing to OUTB; supports paralleling for higher current |
| 8 ENB | Channel B enable input | Active-high logic; identical behavior to ENA; allows per-channel disable without affecting other channel |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent enable inputs | ENA/ENB allow per-channel shutdown for phase shedding or fault containment in multi-phase converters |
| Active output voltage clamping | Clamps OUTA/OUTB to −2.5 V during negative dV/dt events, eliminating need for external clamping diodes |
| Tight propagation delay matching | +6/−4 ns inter-channel skew ensures synchronized gate drive for interleaved or paralleled MOSFETs |
| Industrial-grade qualification | JEDEC JESD47 qualified for −40 °C to +125 °C ambient, supporting uncooled industrial SMPS deployments |
| Reverse current robustness | Withstands 5 A reverse current on OUTA/OUTB - critical for synchronous rectifier body-diode conduction recovery |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: High-density 48 V–12 V intermediate bus converter in data center server racks requiring >95% efficiency at 1 MHz switching. IC Role / Device Role / Timing Role: Dual low-side driver controlling parallel SiC MOSFETs in synchronous buck topology; delivers matched 19 ns delays to minimize dead-time loss. Use Value: ±5 A drive strength reduces gate charge time by >40% vs. 2 A drivers, lowering switching losses and enabling smaller gate resistors. |
Use Scenario: 24 V input, 5 V/30 A isolated DC-DC module for PLC I/O modules operating in harsh factory environments. IC Role / Device Role / Timing Role: Low-side driver for synchronous rectifiers in secondary-side LLC resonant converter; UVLO at 4 V prevents misfiring during cold-start voltage ramp. Use Value: −12 V input tolerance eliminates need for external level-shifting or protection circuitry on controller interface lines. |
| Telecom Rectifier Module | EV Onboard Charger Auxiliary Supply |
|
Use Scenario: 48 V telecom rectifier with digital PWM controller driving dual-phase synchronous rectification for 12 V/20 A output. IC Role / Device Role / Timing Role: Dual-channel gate driver enabling independent phase control via separate INA/INB and ENA/ENB signals for adaptive dead-time adjustment. Use Value: 500 ns shut-down time allows rapid fault response (<1 µs) during overcurrent events, improving system reliability. |
Use Scenario: Auxiliary 12 V power supply in EV onboard charger using flyback topology with synchronous rectification for improved light-load efficiency. IC Role / Device Role / Timing Role: Low-side driver for two parallel 30 V MOSFETs on secondary side; active output clamping suppresses ringing during transformer leakage energy recovery. Use Value: 1.8 µs start-up time ensures clean soft-start behavior without output overshoot during power-up sequencing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADR | 4 A peak output, 17 ns propagation delay, no active output clamping, 5 V UVLO only | Lacks negative transient protection; requires external clamp diodes in high-dV/dt synchronous rectifier layouts | Preferred where cost sensitivity outweighs clamping requirement and UVLO margin is sufficient |
| LM5113MMX/NOPB | 5 A peak output, 25 ns propagation delay, integrated bootstrap diode, 6 V UVLO | Designed for high-side + low-side combo; not pin-compatible; higher delay increases dead-time uncertainty | Selected when bootstrapped high-side drive is needed alongside low-side, not for pure low-side dual-channel use |
Compared with UCC27524ADR and LM5113MMX/NOPB, 2EDN8534FXTMA1 uniquely combines ±5 A drive, active clamping, and 4 V UVLO in an industrial-qualified DSO-8 package - making it optimal for noise-immune, high-reliability synchronous rectification where gate protection and timing precision are non-negotiable.
Availability
2EDN8534FXTMA1 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, telecom rectifiers, and EV auxiliary supplies requiring stable component supply under extended temperature and long-lifecycle commitments.
Supply support for 2EDN8534FXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gate driver innovation.
The EiceDRIVER™ 2EDN family targets high-efficiency, high-frequency power conversion systems - specifically engineered for synchronous rectification, multi-phase VRMs, and compact DC-DC modules demanding precision timing and rugged gate drive.
FAQ
What is the maximum recommended PCB trace inductance between VDD and GND for stable operation?
Infineon specifies ≤10 nH total loop inductance for the VDD–GND decoupling path. This requires placing a 100 nF X7R ceramic capacitor within 2 mm of pins 6 (VDD) and 3 (GND), plus a 4.7 µF bulk capacitor within 5 mm. Exceeding this inductance risks oscillation during 5 A output transitions due to parasitic resonance with internal driver impedance.
Can ENA and ENB be tied together and driven by a single microcontroller GPIO?
Yes - ENA and ENB may be shorted and driven by one GPIO without performance penalty. The enable inputs have high-impedance CMOS structure (IIL < 1 µA), so shared control maintains full channel synchronization. However, independent control is retained if future design evolves to require phase-specific disable capability.
Does the 4 V UVLO threshold apply to both rising and falling edges?
No - the UVLO has 4.0 V turn-on (rising) and 3.4 V turn-off (falling), yielding 0.6 V hysteresis. This prevents chattering during slow supply ramps. The datasheet confirms this hysteresis is fixed and not adjustable; no external components modify the threshold.
Is the 2EDN8534FXTMA1 compatible with 1.8 V logic inputs?
No - the absolute minimum input high voltage (VIH) is 2.0 V (min) at VDD = 4.5 V, per Table 8 in the datasheet. Driving with 1.8 V logic risks undefined output states; level-shifting or a 3.3 V controller interface is required for reliable operation.
2EDN8534FXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- 1.4V, 1.9V
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 8.6ns, 6ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
2EDN8534FXTMA1 FAQ
1.How can I place an order for 2EDN8534FXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN8534FXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN8534FXTMA1 reliable?
The price and inventory of 2EDN8534FXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN8534FXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN8534FXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN8534FXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN8534FXTMA1?
2EDN8534FXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN8534FXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN8534FXTMA1?
For technical support, including 2EDN8534FXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN8534FXTMA1 requirements.
6.How does Aetrix verify that 2EDN8534FXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN8534FXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN8534FXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN8534FXTMA1?
All 2EDN8534FXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN8534FXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN8534FXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN8534FXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN8534FXTMA1 Tags
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ZXGD3009E6TA
Diodes Incorporated
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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
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MCP1416T-E/OT
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IX4428NTR
Littelfuse Inc.
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IRS2005STRPBF
Infineon Technologies
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IRS2008STRPBF
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IX4310TTR
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