Infineon Technologies 2EDS7165HXUMA1

Overview

2EDS7165HXUMA1 from Infineon Technologies is a reinforced-isolated dual-channel MOSFET gate driver IC designed for high-reliability half-bridge and synchronous rectifier topologies in industrial SMPS, EV charging, and UPS systems. It delivers 1 A source / 2 A sink output current per channel, features 37 ns typical propagation delay with ±3 ns channel-to-channel mismatch, and supports output supply voltages from 4.5 V to 20 V with 4 V UVLO threshold.

For engineers reviewing the 2EDS7165HXUMA1 datasheet, 2EDS7165HXUMA1 pinout, 2EDS7165HXUMA1 application, or 2EDS7165HXUMA1 equivalent, key selection criteria include reinforced isolation certification (VDE 0884-10 VIOTM = 8 kVpk), CMTI >150 V/ns, dual independent channel timing accuracy, and compatibility with CoolMOS™/CoolSIC™ power switches in fast-switching (>10 MHz PWM) systems.

Technical Context

The 2EDS7165HXUMA1 implements coreless transformer (CT) technology for input-to-output reinforced isolation and separate galvanic isolation between channels. Its timing architecture ensures stable 37 ns propagation delay across –40°C to +150°C junction temperature, with <3 ns inter-channel skew critical for precise dead-time control in high-frequency LLC and phase-shifted full-bridge converters.

It integrates dual independent UVLO monitoring: input-side lockout below 3 V triggers safety self-lockdown of outputs, while output-side UVLO thresholds (4 V) protect against insufficient gate drive voltage. The device accepts CMOS/TTL inputs and supports bootstrapped high-side supply generation via external diode/capacitor networks.

Key Specifications

Pinout & Package

2EDS7165HXUMA1 is housed in a wide-body PG-DSO-16-30 package (10.3 mm × 10.3 mm, 1.27 mm pitch), optimized for creepage/clearance compliance in reinforced isolation applications. Thermal pad on underside enhances PCB heat dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel reinforced-isolated gate driver applications.

Compared with Si827x and ADuM4223, 2EDS7165HXUMA1 offers the only combination of VDE 0884-10 reinforced certification, 37 ns timing, and 1 A/2 A drive optimized for thermally constrained industrial SMPS - making it the sole choice where regulatory compliance and high-frequency precision are jointly required.

Availability

2EDS7165HXUMA1 is available at Aetrix Electronics and suitable for server power supplies, EV onboard chargers, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and reinforced isolation compliance.

Supply support for 2EDS7165HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies.

The EiceDRIVER™ 2EDi family targets high-efficiency, high-reliability power conversion systems - specifically engineered to replace optocouplers and pulse transformers in industrial, telecom, and EV infrastructure where reinforced isolation and nanosecond timing accuracy are mandatory.

FAQ

What is the maximum allowable dV/dt transient the 2EDS7165HXUMA1 can withstand without malfunction?

The device guarantees functional integrity under common-mode transients exceeding 150 V/ns, validated per VDE 0884-10 test methodology. This rating applies across its full operating temperature range and ensures reliable operation in 650 V–1200 V SiC/GaN half-bridge circuits where dV/dt peaks exceed 100 V/ns during switching transitions.

Can the 2EDS7165HXUMA1 drive both high-side and low-side switches in a single half-bridge without external level-shifting components?

Yes - its dual independent isolated channels provide fully separated output supplies (VDDA/VDDA and VDDB/GNDB), enabling direct connection to high-side and low-side MOSFET gates in standard half-bridge configurations. No external level shifters or bootstrap diodes are needed for the gate drive path itself, though bootstrap circuitry may still be used for high-side VDDA generation.

Does the 2EDS7165HXUMA1 support independent enable/disable control for each channel?

No - it provides only a single global DISABLE pin that simultaneously disables both output channels. Individual channel control is not supported; separate enable signals require external logic or a second driver IC. This design prioritizes safety-critical simultaneous shutdown over per-channel flexibility.

What is the purpose of the SLDON pin, and how does it affect VDDI operation?

SLDON selects the input-side regulator mode: when left open or tied to VDDI, the internal SLDO is disabled and VDDI must be supplied externally at 3.3 V; when grounded, the SLDO activates and accepts VDDI inputs from 3.5 V to 5.5 V, regulating down to 3.3 V. This allows flexible controller interface options while maintaining clean logic supply under varying input conditions.