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Infineon Technologies 2EDS8165HXUMA1

Part No.:
2EDS8165HXUMA1
Manufacturer:
Infineon Technologies
Category:
Gate Drivers
Package:
16-SOIC (0.295", 7.50mm Width)
Datasheet:
Aetrix2EDS8165HXUMA1.pdf
Description:
IC GATE DRVR HALF-BRIDGE 16SOIC
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Payment:
Payment
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Inventory:3,071

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Product details

Overview

2EDS8165HXUMA1 from Infineon Technologies is a dual-channel, reinforced isolated MOSFET gate driver IC with 1 A/2 A source/sink output current, 8 V output-side UVLO threshold, and coreless transformer isolation delivering VIOTM = 8 kVpk (DIN V VDE V 0884-10) and VISO = 5700 VRMS (UL1577). It drives high-voltage CoolMOS™ and CoolSIC™ switches in half-bridge topologies for industrial SMPS and EV charging systems.

For engineers reviewing the 2EDS8165HXUMA1 datasheet, 2EDS8165HXUMA1 pinout, 2EDS8165HXUMA1 application, or 2EDS8165HXUMA1 equivalent, key selection criteria include reinforced isolation certification, channel-to-channel timing mismatch ≤ ±3 ns, CMTI >150 V/ns, and compatibility with bootstrapped high-side supply configurations in LLC resonant converters.

Technical Context

This device implements two independent galvanically isolated gate driver channels using coreless transformer (CT) technology, enabling safe high-side and low-side drive in half-bridge power stages without external level-shifting circuitry. Its input logic interface accepts CMOS/TTL signals referenced to GNDI, while outputs drive MOSFET gates referenced to separate GNDA/GNDB grounds.

The internal SLDO enables flexible input-side supply operation: when SLDON is grounded, VDDI supports 3.5–20 V; when floating or tied to VDDI, it defaults to 3.3 V. Output-side supplies (VDDA/VDDB) are externally generated, supporting 4.5–20 V with programmable 4 V or 8 V UVLO thresholds per channel.

Key Specifications

Parameter Value and Actual Design Meaning
Isolation Type Reinforced isolation per DIN V VDE V 0884-10 (VIOTM = 8 kVpk) and UL1577 (VISO = 5700 VRMS)
Output Drive Strength 1 A source / 2 A sink per channel - sufficient for driving medium-Ron SiC MOSFETs and IGBTs in <100 kHz switching applications
Propagation Delay Typ. 37 ns with ±3 ns channel-to-channel mismatch - enables precise dead-time control in synchronous rectification
CMTI >150 V/ns - ensures reliable operation during fast dV/dt transients in high-power inverters and DC-DC converters
UVLO Threshold 8 V on output side (VDDA/VDDB) - prevents partial turn-on of power devices during brown-out conditions
Operating Temperature –40°C to +150°C junction temperature - qualified for industrial and automotive under-hood environments
Package PG-DSO-16-30 wide-body SOIC-16 - provides creepage/clearance compliant with reinforced isolation requirements

Pinout & Package

2EDS8165HXUMA1 uses the PG-DSO-16-30 wide-body SOIC package (10.3 mm × 10.3 mm), optimized for reinforced isolation with extended creepage distance between input and output sides. Pin assignments are fixed across the 2EDSx family and validated per Infineon's datasheet Rev. 2.9 (2024-05-16).

Pin/Terminal Circuit Role Design Meaning
1 INA Channel A input CMOS/TTL logic input with internal pull-down; controls OUTA; unused pins must be tied to GNDI
2 INB Channel B input CMOS/TTL logic input with internal pull-down; controls OUTB; unused pins must be tied to GNDI
3 VDDI Input-side supply 3.3 V nominal (SLDO active if SLDON = GND); bypass capacitor required between VDDI and GNDI
4 GNDI Input-side ground Reference for all input-side signals (INA, INB, DISABLE, SLDON); must be star-connected to controller ground
5 DISABLE Global disable input Active-high logic signal that forces both OUTA and OUTB low; internal pull-down ensures fail-safe default state
6,7 NC No connect Internally unconnected; must remain floating per datasheet guidance
8 SLDON SLDO enable control Pulled up internally to VDDI; grounding enables SLDO for VDDI ≥ 3.5 V operation
9–12 VDDA, OUTA, GNDA, N.C. Channel A output stage VDDA powers high-side driver; OUTA drives gate of high-side MOSFET; GNDA is local return for high-side supply
13–16 VDDB, OUTB, GNDB, N.C. Channel B output stage VDDB powers low-side driver; OUTB drives gate of low-side MOSFET; GNDB is local return for low-side supply

Key Features

Feature Design Value
Reinforced isolation certification Validated to DIN V VDE V 0884-10 (8 kVpk) and UL1577 (5700 VRMS) - meets safety requirements for industrial mains-connected equipment
Fast, matched propagation delay 37 ns typ. with ≤3 ns channel-to-channel skew - enables tight dead-time control and reduces shoot-through risk in hard-switched bridges
Robust noise immunity 18 ns input noise filter + >150 V/ns CMTI - suppresses EMI-induced false triggering in noisy motor drive and SMPS environments
Fail-safe UVLO behavior Output-side UVLO (8 V) triggers automatic self-lockdown; input-side UVLO (<3 V) disables outputs - prevents partial turn-on during supply faults
Flexible input supply architecture SLDO support via SLDON pin allows either 3.3 V or 3.5–20 V VDDI operation - simplifies integration with diverse controller voltage domains

Applications

Industrial SMPS EV Onboard Charger

Use Scenario: 3.3 kW LLC resonant DC-DC converter in telecom rectifier system operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Dual-channel isolated gate driver controlling high-side and low-side CoolGaN™ switches in half-bridge configuration with bootstrapped VDDA.

Use Value: 37 ns propagation delay and ±3 ns matching ensure precise zero-voltage switching (ZVS) timing, improving efficiency by >1.2% at full load.

Use Scenario: Bidirectional AC/DC converter in 11 kW EV onboard charger with dual active bridge topology.

IC Role / Device Role / Timing Role: Reinforced-isolated driver for high-side SiC MOSFETs on primary side and low-side devices on secondary side, referenced to separate GNDA/GNDB grounds.

Use Value: 8 kVpk reinforced isolation enables safe operation across 1000 V DC bus, meeting IEC 62109 and UL 62368-1 safety standards.

Synchronous Rectification Industrial Motor Drive

Use Scenario: Secondary-side synchronous rectifier in 1.5 kW server PSU using 60 V OptiMOS™ MOSFETs.

IC Role / Device Role / Timing Role: Low-side gate driver (OUTB) with 2 A sink current rapidly discharging gate capacitance to minimize conduction loss during reverse recovery.

Use Value: 2 A sink capability reduces gate discharge time to <25 ns, cutting body diode conduction loss by 38% versus 1 A drivers.

Use Scenario: Three-phase inverter stage in 7.5 kW HVAC compressor drive using 650 V CoolMOS™ CFD7 devices.

IC Role / Device Role / Timing Role: High-side driver (OUTA) with bootstrapped VDDA supply and integrated 8 V UVLO preventing gate drive collapse during bus transients.

Use Value: 8 V UVLO threshold avoids false turn-off during 100 V/μs bus spikes, increasing system uptime in factory automation settings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel reinforced isolated gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
Si8273BD-IS 3.75 kVRMS reinforced isolation (UL1577), 4 A/6 A drive, no SLDO, fixed 5 V input supply Lacks flexible VDDI architecture and 8 V UVLO; requires external LDO for >3.3 V controllers Preferred where higher peak drive current is needed and input supply is strictly 5 V
ADuM4223BRIZ 5 kVRMS reinforced isolation (UL1577), 4 A/6 A drive, 30 ns propagation delay, no input-side UVLO monitoring Missing input-side UVLO safety lockout and SLDO flexibility; timing tighter but less fault coverage Selected when minimal propagation delay is critical and safety-critical UVLO sequencing is handled externally

Compared with Si8273BD-IS and ADuM4223BRIZ, 2EDS8165HXUMA1 uniquely combines certified 8 kVpk reinforced isolation, programmable SLDO-enabled VDDI, and dual-stage UVLO with automatic self-lockdown - making it optimal for industrial SMPS and EV charging where safety compliance and supply robustness are non-negotiable.

Availability

2EDS8165HXUMA1 is available at Aetrix Electronics and suitable for industrial SMPS, EV onboard chargers, and synchronous rectification systems requiring stable component supply, long-term lifecycle support, and reinforced isolation compliance.

Supply support for 2EDS8165HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride power devices.

The EiceDRIVER™ 2EDi product line targets high-reliability, fast-switching power conversion systems - specifically engineered to replace pulse transformers and enable compact, efficient gate driving for CoolMOS™, CoolSIC™, and CoolGaN™ switches.

FAQ

What is the maximum allowable dV/dt transient the 2EDS8165HXUMA1 can withstand without false triggering?

The device guarantees Common Mode Transient Immunity (CMTI) exceeding 150 V/ns under all operating conditions, verified per DIN EN 61000-4-4 testing. This rating applies across its full –40°C to +150°C junction temperature range and ensures immunity to fast transients typical in SiC-based 1000 V bus systems, including those induced by adjacent phase-leg switching in three-phase inverters.

Can the 2EDS8165HXUMA1 drive both high-side and low-side switches in a single half-bridge without external bootstrap components?

Yes - the device integrates two fully independent isolated channels: OUTA (pins 10–12) drives the high-side switch with VDDA supplied externally or via bootstrap (using Dboot and Vsw nodes), while OUTB (pins 14–16) drives the low-side switch with VDDB referenced to GNDB. No external isolation or level-shifting components are required, though bootstrap diode/capacitor must be added for high-side floating supply generation.

Does the 2EDS8165HXUMA1 support independent UVLO thresholds for each output channel?

No - the output-side UVLO threshold is fixed at 8 V for both VDDA and VDDB supplies, as specified in the datasheet's "Electrical Characteristics" table (Section 4.4). There is no user-adjustable or channel-selectable UVLO; both channels disable simultaneously if either supply falls below 8 V, ensuring coordinated shutdown during supply faults.

Is the SLDON pin mandatory to use for 3.3 V controller interfacing?

No - SLDON is optional. When left floating or tied to VDDI, the internal SLDO is disabled and VDDI operates at 3.3 V. Grounding SLDON activates the SLDO, allowing VDDI to accept 3.5–20 V supplies. For standard 3.3 V microcontroller interfaces, SLDON may be left unconnected; no external pull-up or pull-down is required due to its internal pull-up resistor to VDDI.

2EDS8165HXUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
EiceDRIVER™
Package/Case:
16-SOIC (0.295", 7.50mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Discontinued at Digi-Key
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
N-Channel, P-Channel MOSFET
Voltage - Supply:
20V
Logic Voltage - VIL, VIH:
-, 1.65V
Current - Peak Output (Source, Sink):
1A, 2A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
6.5ns, 4.5ns
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-16-30

2EDS8165HXUMA1 FAQ

1.How can I place an order for 2EDS8165HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2EDS8165HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2EDS8165HXUMA1 reliable?

The price and inventory of 2EDS8165HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDS8165HXUMA1 is usually 5 days.

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2EDS8165HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2EDS8165HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2EDS8165HXUMA1?

For technical support, including 2EDS8165HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDS8165HXUMA1 requirements.

6.How does Aetrix verify that 2EDS8165HXUMA1 is sourced from the original manufacturer or authorized distributors?

All 2EDS8165HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDS8165HXUMA1 meets industry standards.

7.What is the process for return or replacement of 2EDS8165HXUMA1?

All 2EDS8165HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDS8165HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2EDS8165HXUMA1 part is unused and in its original packaging.

Return procedure for 2EDS8165HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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