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Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 2EDS8165HXUMA2

Name: 2EDS8165HXUMA2
Brand: Infineon Technologies
SKU: 2EDS8165HXUMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2EDS8165HXUMA2

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 16-SOIC (0.295", 7.50mm Width)

Datasheet:: 2EDS8165HXUMA2.pdf

Description:: IC GATE DRVR HALF-BRIDGE 16SOIC

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Product details

Overview

2EDS8165HXUMA2 from Infineon Technologies is a dual-channel, reinforced isolated MOSFET gate driver IC with 1 A/2 A source/sink output current, 37 ns typical propagation delay, and >150 V/ns CMTI-designed for high-reliability half-bridge switching in industrial SMPS and EV charging systems using CoolMOS™ or CoolSIC™ power stages.

For engineers reviewing the 2EDS8165HXUMA2 datasheet, 2EDS8165HXUMA2 pinout, 2EDS8165HXUMA2 application, or 2EDS8165HXUMA2 equivalent, this device delivers precise timing stability across –40°C to +150°C, functional safety compliance (VDE 0884-10, UL 1577), and robust noise immunity in high-dV/dt environments-critical for evaluating gate drive integrity in fast-switching SiC/GaN power converters.

Technical Context

This IC implements coreless transformer (CT) isolation between input and output sides, enabling reinforced isolation up to 8 kV_pk (VIOTM) and 5.7 kV_RMS (VISO). Its dual independent channels support asymmetric drive configurations-e.g., high-side bootstrapped and low-side directly supplied-with separate UVLO thresholds (4 V on output side) and integrated safety lock-down during input-side undervoltage.

The device features 18 ns input noise filtering, 5 A peak reverse current capability at outputs, and channel-to-channel mismatch of only –3 ns. It operates with input logic compatible with 3.3 V CMOS/TTL and supports auxiliary output supply voltages from 4.5 V to 20 V, making it suitable for both fixed-rail and bootstrap-based gate drive architectures.

Key Specifications

Parameter	Value and Actual Design Meaning
Isolation Type	Reinforced isolation per DIN V VDE V 0884-10 (2006-12) and UL 1577-enables use in safety-critical systems requiring double insulation.
Output Drive Strength	1 A source / 2 A sink per channel-optimized for higher-R_on MOSFETs and EMI-sensitive designs where slower edge rates are acceptable.
Propagation Delay	Typ. 37 ns with ±6 ns variance-ensures tight timing control for synchronous rectification and phase-shifted topologies.
CMTI	>150 V/ns-prevents false triggering in high-speed SiC/GaN half-bridges operating above 100 V/ns dV/dt.
UVLO Threshold (Output)	4 V (typ.)-protects against weak gate drive during brown-out conditions on VDDA/VDDB rails.
Operating Temperature	–40°C to +150°C junction temperature-supports deployment in enclosed industrial power supplies and on-board EV chargers.
Package	PG-DSO-16-30 wide-body SOIC (10.3 mm × 10.3 mm)-provides creepage/clearance compliant with reinforced isolation requirements.

Pinout & Package

2EDS8165HXUMA2 is housed in a PG-DSO-16-30 wide-body SOIC package with 16 pins, optimized for reinforced isolation performance and thermal dissipation in high-power gate drive applications.

Pin	Circuit Role	Design Meaning
1	INA	CMOS/TTL input for channel A; internal pull-down ensures safe default state when unused.
2	INB	CMOS/TTL input for channel B; independent logic control enables asymmetrical PWM schemes.
3	VDDI	3.3 V input-side supply; supports internal SLDO activation if SLDON is grounded.
4	GNDI	Input-side reference ground-must be separated from output-side grounds to maintain isolation integrity.
5	DISABLE	Active-high global disable for both channels; internal pull-down prevents unintended enable at power-up.
6,7	N.C.	No-connect pins-must remain floating to avoid compromising isolation barrier.
8	SLDON	Selects SLDO mode: tied to GNDI enables >3.5 V VDDI operation; open or tied to VDDI selects 3.3 V default.
9–12	VDDA, OUTA, GNDA, N.C.	High-side gate drive domain: VDDA powers channel A, OUTA drives gate, GNDA is local return-no shared ground with low-side.
13–16	VDDB, OUTB, GNDB, N.C.	Low-side gate drive domain: VDDB powers channel B, OUTB drives gate, GNDB is local return-fully isolated from high-side domain.

Key Features

Feature	Design Value
Reinforced Isolation Certification	Qualified to VDE 0884-10 (VIOTM = 8 kV_pk) and UL 1577 (VISO = 5.7 kV_RMS)-meets IEC 62368-1 for end-equipment safety compliance.
Timing Accuracy	37 ns typ. propagation delay with –3 ns channel-to-channel skew-reduces dead-time uncertainty in synchronous rectifiers.
Robust Input Filtering	18 ns digital noise filter on INA/INB-rejects sub-55 ns transients common in noisy motor drive or charger EMI environments.
Safety Lock-Down	Automatic output disable and self-lock when VDDI falls below 3 V-prevents erratic switching during controller brown-out.
Reverse Current Capability	5 A peak reverse current rating at OUTA/OUTB-handles Miller current reversal during fast turn-off of high-C_iss SiC MOSFETs.

Applications

Industrial SMPS

EV On-Board Charger

Use Scenario: 3.3 kW LLC resonant converter with CoolSIC™ MOSFETs in primary-side half-bridge.

IC Role / Device Role / Timing Role: Dual-channel isolated gate driver providing independent high- and low-side control with matched propagation delay for ZVS optimization.

Use Value: 37 ns timing accuracy reduces required dead time by ≥15 ns versus legacy optocoupler-based drivers, improving efficiency at 300 kHz switching.

Use Scenario: Bidirectional AC/DC stage in 11 kW OBC using interleaved totem-pole PFC with CoolGaN™ HEMTs.

IC Role / Device Role / Timing Role: Reinforced-isolated driver enabling safe gate control across primary-secondary boundary in Class II medical-grade isolation systems.

Use Value: 8 kV_pk VIOTM rating satisfies reinforced insulation requirements for patient-connected equipment per IEC 62368-1.

Telecom Rectifier

Motor Drive Inverter

Use Scenario: 48 V input, 12 V/50 A telecom rectifier with synchronous rectification using OptiMOS™ 40 V MOSFETs.

IC Role / Device Role / Timing Role: Low-side gate driver with 2 A sink current ensuring fast turn-off of paralleled MOSFETs under high-current load steps.

Use Value: 2 A sink strength maintains <100 ns fall time even with 2 nF total gate capacitance, preventing shoot-through during transient load changes.

Use Scenario: 7.5 kW servo inverter driving IPM with integrated CoolMOS™ switches in three-phase bridge configuration.

IC Role / Device Role / Timing Role: High-side driver with bootstrapped VDDA supply and 150 V/ns CMTI tolerance for reliable operation in high-dV/dt motor phase legs.

Use Value: >150 V/ns CMTI prevents false turn-on during IGBT/MOSFET switching edges, eliminating need for external snubbers in compact PCB layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel reinforced isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2EDS8265HXUMA2	4 A/8 A output drive vs. 1 A/2 A; same package and isolation specs.	Better suited for low-R_on Superjunction MOSFETs requiring faster edge rates.	Select when driving CoolMOS™ C7 or similar with gate charge >50 nC at ≤20 ns rise time.
Si8273BD-IS	Capacitive isolation; 4 A/4 A drive; lower CMTI (100 V/ns); different pinout.	Lacks VDE 0884-10 certification; not rated for reinforced isolation in medical/industrial safety standards.	Consider only for cost-sensitive non-safety-critical applications where UL-only isolation suffices.

Compared with 2EDS8265HXUMA2, this part trades peak drive strength for lower EMI generation and reduced gate drive loss; versus Si8273BD-IS, it provides certified reinforced isolation and superior noise immunity-making it the preferred choice for IEC 62368-1-compliant power systems.

Availability

2EDS8165HXUMA2 is available at Aetrix Electronics and suitable for industrial SMPS, EV on-board chargers, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and full safety certification traceability.

Supply support for 2EDS8165HXUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to the EiceDRIVER™ 2EDi family-designed specifically for high-efficiency, high-reliability isolated gate driving in fast-switching medium- to high-voltage power conversion systems.

FAQ

What is the maximum recommended switching frequency for 2EDS8165HXUMA2?

The device supports PWM signal propagation up to 10 MHz, but practical switching frequency is constrained by gate drive strength and external gate resistor selection. For 1 A/2 A drive into typical 10–20 nC MOSFETs, reliable operation is confirmed up to 500 kHz in hard-switched topologies and 1 MHz in resonant converters with controlled dV/dt.

Can 2EDS8165HXUMA2 drive both high-side and low-side switches in a half-bridge without additional level-shifting circuitry?

Yes-its dual-channel architecture provides fully independent, galvanically isolated output domains (VDDA/GNDA and VDDB/GNDB), enabling direct connection to high-side and low-side MOSFET gates without external level shifters or bootstrap diodes for the high-side channel.

Does 2EDS8165HXUMA2 require external bypass capacitors on its supply pins?

Yes-Infineon specifies 100 nF ceramic capacitors between VDDI–GNDI and each output supply pair (VDDA–GNDA, VDDB–GNDB), placed within 5 mm of respective pins. These are mandatory to suppress high-frequency ringing and ensure stable UVLO behavior during fast load transients.

How does the DISABLE pin interact with the internal UVLO protection?

The DISABLE pin is asynchronous and overrides all logic states-including UVLO-induced lock-down. When asserted high, it forces both outputs low immediately, regardless of VDDI or VDDA/VDDB status. However, if VDDI drops below 3 V, the internal safety circuit engages first, disabling outputs and holding them low until VDDI recovers above 3.3 V.

2EDS8165HXUMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: EiceDRIVER™

Package/Case:: 16-SOIC (0.295", 7.50mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: Half-Bridge

Channel Type:: Independent

Number of Drivers:: 2

Gate Type:: N-Channel, P-Channel MOSFET

Voltage - Supply:: 20V

Logic Voltage - VIL, VIH:: -, 1.65V

Current - Peak Output (Source, Sink):: 1A, 2A

Input Type:: Non-Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 6.5ns, 4.5ns

Operating Temperature:: -40°C ~ 125°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-16-30

2EDS8165HXUMA2 FAQ

1.How can I place an order for 2EDS8165HXUMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2EDS8165HXUMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2EDS8165HXUMA2 reliable?

The price and inventory of 2EDS8165HXUMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDS8165HXUMA2 is usually 5 days.

3.What payment methods are accepted for 2EDS8165HXUMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDS8165HXUMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2EDS8165HXUMA2?

2EDS8165HXUMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2EDS8165HXUMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2EDS8165HXUMA2?

For technical support, including 2EDS8165HXUMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDS8165HXUMA2 requirements.

6.How does Aetrix verify that 2EDS8165HXUMA2 is sourced from the original manufacturer or authorized distributors?

All 2EDS8165HXUMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDS8165HXUMA2 meets industry standards.

7.What is the process for return or replacement of 2EDS8165HXUMA2?

All 2EDS8165HXUMA2 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDS8165HXUMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2EDS8165HXUMA2 part is unused and in its original packaging.

Return procedure for 2EDS8165HXUMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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