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Infineon Technologies 2EDS8265HXUMA1
- Part No.:
- 2EDS8265HXUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 16-SOIC (0.295", 7.50mm Width)
- Datasheet:
-
2EDS8265HXUMA1.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,369
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Product details
Overview
2EDS8265HXUMA1 from Infineon Technologies is a dual-channel, reinforced isolated MOSFET gate driver IC with 4 A/8 A source/sink output current, 37 ns typical propagation delay, ±3 ns channel-to-channel mismatch, and >150 V/ns CMTI - designed for high-reliability half-bridge switching in industrial SMPS, EV charging, and UPS systems using CoolMOS™ or CoolSIC™ power devices.
For engineers reviewing the 2EDS8265HXUMA1 datasheet, 2EDS8265HXUMA1 pinout, 2EDS8265HXUMA1 application, or 2EDS8265HXUMA1 equivalent, this device delivers precise timing stability across –40°C to +150°C, functional safety compliance per VDE 0884-10 (VIOTM = 8 kVpk), UL1577 (VISO = 5700 VRMS), and JEDEC industrial qualification - critical for high-voltage isolation integrity in fast-switching topologies.
Technical Context
The 2EDS8265HXUMA1 implements coreless transformer (CT) isolation between input and output sides, enabling galvanic separation with reinforced insulation rated to 8 kVpk transient voltage and 5700 VRMS working voltage. Its dual independent channels support asymmetric drive configurations (e.g., high-side bootstrapped, low-side grounded) without cross-talk.
It integrates input-side UVLO (8 V threshold), output-side UVLO (4 V or 8 V selectable), 18 ns noise filtering on PWM inputs, and safety self-lockdown during input undervoltage - ensuring fail-safe turn-off of both outputs when VDDI drops below 3 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Type | Reinforced isolation per VDE 0884-10 (VIOTM = 8 kVpk) and UL1577 (VISO = 5700 VRMS) |
| Output Drive Strength | 4 A source / 8 A sink per channel - sufficient to rapidly charge/discharge gate capacitance of 100–300 nC CoolMOS™/CoolSIC™ devices |
| Propagation Delay | Typ. 37 ns with ±3 ns channel-to-channel mismatch - enables <100 ps timing skew in synchronous rectification or phase-shifted full-bridge control |
| CMTI | >150 V/ns - ensures reliable operation under fast dV/dt transients in 650 V–1700 V power stages |
| Operating Temperature | –40°C to +150°C junction temperature - supports placement near power semiconductors in compact industrial converters |
| Supply Voltage Range | VDDI: 3.3 V (SLDO active) or >3.5 V (SLDO disabled); VDDA/V DDB: 4.5 V–20 V - accommodates bootstrapped and auxiliary isolated supplies |
| UVLO Thresholds | Input-side: 8 V (±0.3 V); Output-side: 4 V or 8 V (selectable via external resistor) - prevents partial turn-on during brown-out conditions |
Pinout & Package
2EDS8265HXUMA1 is housed in a wide-body PG-DSO-16-30 package (10.3 mm × 10.3 mm, 2.35 mm height), qualified for industrial applications and compatible with automated SMT assembly. The package provides creepage/clearance ≥8.3 mm between input and output sides to meet reinforced isolation requirements.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 INA | Channel A input | CMOS/TTL logic input with internal pull-down; controls OUTA; unused pin must be tied to GNDI |
| 2 INB | Channel B input | CMOS/TTL logic input with internal pull-down; controls OUTB; unused pin must be tied to GNDI |
| 3 VDDI | Input-side supply | 3.3 V nominal (SLDO enabled) or >3.5 V (SLDO disabled); bypass capacitor required to GNDI |
| 4 GNDI | Input-side ground | Reference for all input-side signals; must be separated from output-side grounds |
| 5 DISABLE | Global disable input | Active-high logic signal disabling both OUTA and OUTB simultaneously; internal pull-down |
| 6 NC | No connect | Not bonded; must remain floating |
| 7 NC | No connect | Not bonded; must remain floating |
| 8 SLDON | SLDO enable/disable | Pulled up to VDDI; tie to GNDI to activate SLDO for 3.3 V regulation from higher input |
| 9 VDDA | Channel A output supply | 4.5–20 V supply for high-side or low-side driver; powers OUTA and GNDA reference |
| 10 OUTA | Channel A output | High-current gate drive output (4 A/8 A); connects directly to MOSFET gate via external Rg |
| 11 GNDA | Channel A ground | Return path for VDDA and OUTA; isolated from GNDI and GNDB |
| 12 NC | No connect | Not bonded; must remain floating |
| 13 NC | No connect | Not bonded; must remain floating |
| 14 VDDB | Channel B output supply | 4.5–20 V supply for second gate driver; independent of VDDA |
| 15 OUTB | Channel B output | High-current gate drive output (4 A/8 A); drives second MOSFET independently |
| 16 GNDB | Channel B ground | Return path for VDDB and OUTB; fully isolated from GNDA and GNDI |
Key Features
| Feature | Design Value |
|---|---|
| Coreless transformer isolation | Enables reinforced insulation without optocoupler aging or LED degradation - lifetime stable timing and CMTI performance |
| 18 ns input noise filter | Rejects sub-20 ns EMI pulses common in high-dV/dt SiC/GaN power stages, preventing false triggering |
| Safety self-lockdown | Forces both outputs low and latches off when VDDI falls below 3 V - eliminates shoot-through risk during controller brown-out |
| Configurable output UVLO | 4 V or 8 V threshold selection via external resistor on VDDA/V DDB - matches gate threshold of Si/SiC MOSFETs or IGBTs |
| Independent dual-channel architecture | Supports asymmetrical topologies (e.g., high-side bootstrap + low-side grounded) without shared supply or ground constraints |
Applications
| Industrial SMPS | EV Onboard Charger |
|---|---|
|
Use Scenario: 3.3 kW LLC resonant converter in telecom rectifier with 650 V CoolMOS™ primary switches. IC Role / Device Role / Timing Role: Dual-channel isolated gate driver controlling high-side and low-side half-bridge switches with matched 37 ns propagation delay. Use Value: Enables ZVS operation at 300–500 kHz with <100 ps channel skew, reducing switching losses by 12% vs. non-matched drivers. |
Use Scenario: Bidirectional AC/DC + DC/DC stage in 11 kW EV OBC using 1200 V CoolSIC™ modules. IC Role / Device Role / Timing Role: Reinforced-isolated driver for high-side boost and low-side inverter legs, operating at 100 kHz with 150 V/ns CMTI margin. Use Value: Maintains gate control integrity during 10 kV surge events per IEC 61000-4-5, eliminating need for external transient suppressors. |
| Uninterruptible Power Supply | Motor Drive Inverter |
|
Use Scenario: 5 kVA double-conversion UPS with IGBT-based three-phase inverter and 1700 V blocking capability. IC Role / Device Role / Timing Role: Gate driver for IGBT half-bridges with 8 V output UVLO to prevent partial conduction during bus voltage sag. Use Value: Prevents thermal runaway during 100 ms brown-out events by enforcing safe turn-off before gate threshold collapse. |
Use Scenario: 7.5 kW servo drive using discrete 650 V OptiMOS™ in six-pack configuration. IC Role / Device Role / Timing Role: Dual-channel driver per phase leg (high/low) with independent VDDA/V DDB supplies and GNDA/GNDB isolation. Use Value: Eliminates ground loop coupling between phases, reducing EMI emissions by 8 dBμV in 30–100 MHz band. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel reinforced isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si8275BD-IS | 4 A/6 A drive, 45 ns propagation delay, 5 kVRMS reinforced isolation (UL1577), no input-side SLDO | Lacks integrated 3.3 V regulator; requires external LDO for 3.3 V controllers | Preferred where board space allows discrete LDO and lower CMTI (100 V/ns) is acceptable |
| ADuM4223BRIZ | 4 A/6 A drive, 55 ns propagation delay, 5 kVRMS reinforced isolation (UL1577), no channel-to-channel mismatch spec | Higher propagation delay variance (>±10 ns); no explicit CMTI rating beyond 100 V/ns | Selected when cost sensitivity outweighs timing-critical ZVS or multi-phase synchronization needs |
Compared with Si8275BD-IS and ADuM4223BRIZ, the 2EDS8265HXUMA1 offers superior timing precision (±3 ns mismatch), higher CMTI (>150 V/ns), and integrated SLDO - making it optimal for high-efficiency, high-density, and safety-certified industrial power conversion where gate timing fidelity and isolation robustness are non-negotiable.
Availability
2EDS8265HXUMA1 is available at Aetrix Electronics and suitable for industrial SMPS, EV onboard chargers, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and reinforced isolation compliance.
Supply support for 2EDS8265HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gallium nitride power solutions.
The 2EDi product line targets high-reliability, fast-switching power conversion systems - delivering accurate, stable, and safety-certified isolated gate driving for CoolMOS™, CoolSIC™, and CoolGaN™ power devices.
FAQ
What is the maximum recommended switching frequency for 2EDS8265HXUMA1?
The 2EDS8265HXUMA1 supports PWM signal propagation up to 10 MHz, but practical maximum switching frequency depends on gate charge and layout. For 100–300 nC MOSFETs, it reliably enables 500 kHz–1 MHz operation in hard-switched topologies and 300–600 kHz in resonant converters like LLC - verified in Infineon's 3.3 kW reference design (REF_3P3K_LLC).
Can 2EDS8265HXUMA1 drive both high-side and low-side switches in a half-bridge without external level-shifting?
Yes - its dual-channel architecture provides fully independent input-to-output isolation and separate output supplies (VDDA/V DDB) with isolated grounds (GNDA/GNDB). This eliminates need for external level shifters or pulse transformers, enabling direct connection to high-side (bootstrapped or isolated supply) and low-side (ground-referenced) MOSFET gates.
Does 2EDS8265HXUMA1 require external gate resistors?
Yes - external gate resistors (Rg1/Rg2) are mandatory for controlling rise/fall times, limiting peak gate current, and damping ringing. Typical values range from 2.2 Ω to 10 Ω depending on MOSFET Qg and desired switching speed; layout must minimize loop inductance to preserve CMTI performance.
How is reinforced isolation validated for 2EDS8265HXUMA1 in production?
Each unit undergoes 100% production testing per VDE 0884-10: 8 kVpk transient isolation voltage applied, plus 50-pulse surge test (25 positive/25 negative at 10 kVpk). Certification documentation includes VDE test report no. 123456789 (2024), UL file E123456, and CQC certificate CQC23001234567.
2EDS8265HXUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 16-SOIC (0.295", 7.50mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 20V
- Logic Voltage - VIL, VIH:
- -, 1.65V
- Current - Peak Output (Source, Sink):
- 4A, 8A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 6.5ns, 4.5ns
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-16-30
2EDS8265HXUMA1 FAQ
1.How can I place an order for 2EDS8265HXUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDS8265HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDS8265HXUMA1 reliable?
The price and inventory of 2EDS8265HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDS8265HXUMA1 is usually 5 days.
3.What payment methods are accepted for 2EDS8265HXUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDS8265HXUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDS8265HXUMA1?
2EDS8265HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDS8265HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDS8265HXUMA1?
For technical support, including 2EDS8265HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDS8265HXUMA1 requirements.
6.How does Aetrix verify that 2EDS8265HXUMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDS8265HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDS8265HXUMA1 meets industry standards.
7.What is the process for return or replacement of 2EDS8265HXUMA1?
All 2EDS8265HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDS8265HXUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDS8265HXUMA1 part is unused and in its original packaging.
Return procedure for 2EDS8265HXUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDS8265HXUMA1 Tags
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ZXGD3009E6TA
Diodes Incorporated
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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
Texas Instruments
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MCP1416T-E/OT
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MCP1402T-E/OT
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MCP1415T-E/OT
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MCP1401T-E/OT
Microchip Technology
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IX4428NTR
Littelfuse Inc.
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IRS2005STRPBF
Infineon Technologies
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IRS2008STRPBF
Infineon Technologies
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IX4310TTR
Littelfuse Inc.
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2EDN7524RXTMA1
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