Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Power Management (PMIC) > Gate Drivers

Infineon Technologies 2EDS8265HXUMA2

Name: 2EDS8265HXUMA2
Brand: Infineon Technologies
SKU: 2EDS8265HXUMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 2EDS8265HXUMA2

Manufacturer:: Infineon Technologies

Category:: Gate Drivers

Package:: 16-SOIC (0.295", 7.50mm Width)

Datasheet:: 2EDS8265HXUMA2.pdf

Description:: IC GATE DRVR HALF-BRIDGE 16SOIC

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:716

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

2EDS8265HXUMA2 from Infineon Technologies is a dual-channel, reinforced isolated MOSFET gate driver IC designed for high-side/low-side half-bridge configurations in fast-switching power converters. It delivers 4 A source / 8 A sink peak output current per channel, features 37 ns typical propagation delay with ±3 ns channel-to-channel mismatch, and supports up to 10 MHz PWM switching frequency. It is qualified for industrial applications and used in server SMPS, EV charging modules, and synchronous rectification circuits.

For engineers reviewing the 2EDS8265HXUMA2 datasheet, 2EDS8265HXUMA2 pinout, 2EDS8265HXUMA2 application, or 2EDS8265HXUMA2 equivalent, key selection criteria include reinforced isolation certification (VDE 0884-10, UL 1577), CMTI >150 V/ns, dual independent UVLO thresholds (8 V on input side, 4 V or 8 V on output side), and compatibility with CoolMOS™, CoolSIC™, and CoolGaN™ power switches.

Technical Context

The 2EDS8265HXUMA2 implements coreless transformer (CT) technology for input-to-output reinforced isolation, achieving VIOTM = 8 kVpk and VISO = 5.7 kVrms. Its dual independent channels support asymmetric drive strength (4 A/8 A) and feature separate output supply rails (VDDA, VDDB) with individual UVLO monitoring.

Timing accuracy is maintained across –40°C to +150°C junction temperature via matched internal propagation paths, with <3 ns channel-to-channel skew and <13 ns total propagation delay variance. The device integrates 18 ns input noise filtering and safety self-lockdown during input-side undervoltage events.

Key Specifications

Parameter	Value and Actual Design Meaning
Isolation Type	Reinforced isolation per DIN V VDE V 0884-10 (2006-12) and UL 1577 - enables use in safety-critical industrial and EV charging systems without external isolation barriers.
Output Drive Strength	4 A source / 8 A sink per channel - sufficient to rapidly charge/discharge gate capacitance of medium-voltage CoolMOS™ and CoolSIC™ MOSFETs in <100 ns.
Propagation Delay	Typ. 37 ns with ±3 ns channel-to-channel mismatch - ensures precise dead-time control and minimizes shoot-through risk in half-bridge topologies.
CMTI	>150 V/ns - maintains signal integrity during fast dV/dt transients common in SiC/GaN-based 650 V–1200 V power stages.
UVLO Thresholds	VDDI UVLO = 8 V (±0.3 V); VDDA/VDDB UVLO = 4 V or 8 V selectable - prevents erratic switching during brown-out conditions on either side of isolation barrier.
Operating Temperature	TJ = –40°C to +150°C - supports operation in thermally constrained environments such as enclosed server PSUs and on-board EV chargers.
Package	PG-DSO-16-30 (wide-body, 10.3 mm × 10.3 mm) - provides enhanced creepage/clearance for reinforced isolation compliance and thermal dissipation in high-power layouts.

Pinout & Package

2EDS8265HXUMA2 is housed in a wide-body PG-DSO-16-30 package (10.3 mm × 10.3 mm), optimized for reinforced isolation with ≥8.5 mm creepage and clearance. Pin assignments are fixed per DSO-16 footprint and validated for industrial layout standards.

Pin/Terminal	Circuit Role	Design Meaning
1 INA	Channel A input	CMOS/TTL-compatible logic input with internal pull-down; controls OUTA independently; unused pin must be tied to GNDI.
2 INB	Channel B input	CMOS/TTL-compatible logic input with internal pull-down; controls OUTB independently; unused pin must be tied to GNDI.
3 VDDI	Input-side supply	3.3 V nominal supply (SLDO enabled) or >3.5 V (SLDO disabled); bypass capacitor required between VDDI and GNDI.
4 GNDI	Input-side ground	Reference for all input-side signals (INA, INB, DISABLE, SLDON); must be low-inductance connection to controller ground plane.
5 DISABLE	Global disable input	Active-high logic input disabling both OUTA and OUTB simultaneously; internal pull-down ensures safe default state.
8 SLDON	SLDO enable control	Pull-up to VDDI by default; tie to GNDI to activate internal 3.3 V regulator for higher VDDI input voltage tolerance.
9 VDDA	Channel A output supply	Provides gate drive voltage for high-side MOSFET; UVLO monitored independently; requires local decoupling.
10 OUTA	Channel A output	High-current gate driver output (4 A/8 A); connects directly to MOSFET gate via external Rg1 resistor.
11 GNDA	Channel A output ground	Return path for OUTA; must be routed separately from GNDB to avoid cross-talk in half-bridge layout.
13 VDDB	Channel B output supply	Provides gate drive voltage for low-side MOSFET; UVLO monitored independently; requires local decoupling.
14 OUTB	Channel B output	High-current gate driver output (4 A/8 A); connects directly to MOSFET gate via external Rg2 resistor.
15 GNDB	Channel B output ground	Return path for OUTB; must be isolated from GNDA and GNDI to preserve channel-to-channel isolation integrity.

Key Features

Feature	Design Value
Reinforced isolation certification	VDE 0884-10 (VIOTM = 8 kVpk), UL 1577 (VISO = 5.7 kVrms), EN 62368-1 - eliminates need for external isolation components in IEC 62368-1-compliant power supplies.
Dual independent UVLO monitoring	Separate 8 V UVLO on VDDI and configurable 4 V/8 V UVLO on VDDA/VDDB - prevents partial drive failure and ensures coordinated shutdown during supply faults.
18 ns input noise filter	Hardware-based digital filter on INA/INB inputs - rejects EMI-induced glitches without software overhead or timing penalty.
Safety self-lockdown	Automatic output disable and latching when VDDI drops below UVLO threshold - prevents undefined gate states during controller brown-out.
High CMTI immunity	>150 V/ns common-mode transient rejection - sustains reliable operation in SiC/GaN half-bridges with dV/dt >50 V/ns.

Applications

Server & Telecom SMPS

Synchronous Rectification

Use Scenario: High-efficiency 48 V–12 V intermediate bus converters in datacenter power shelves.

IC Role / Device Role / Timing Role: Dual-channel isolated gate driver controlling high-side CoolMOS™ and low-side Si MOSFETs in active clamp forward topology.

Use Value: 37 ns propagation delay and <3 ns skew enable tight dead-time control, reducing conduction losses by up to 1.2% at 1 MHz switching.

Use Scenario: Secondary-side synchronous rectification in LLC resonant converters for telecom rectifiers.

IC Role / Device Role / Timing Role: Reinforced-isolated driver for low-side SR FETs, referenced to dynamic output rail with bootstrapped VDDA.

Use Value: >150 V/ns CMTI prevents false triggering during rapid output voltage transitions, improving efficiency by 0.8% over optocoupler-based solutions.

EV On-Board Charger (OBC)

Industrial Motor Drives

Use Scenario: Isolated gate driving in 6.6 kW bidirectional AC/DC OBC PFC and DC/DC stages.

IC Role / Device Role / Timing Role: Functional replacement for pulse transformers in interleaved totem-pole PFC, driving CoolGaN™ HEMTs.

Use Value: 10 MHz PWM capability and 4 A/8 A drive strength support GaN switching at 500 kHz with <20 ns gate rise/fall times.

Use Scenario: Half-bridge gate driving in servo inverters for 3-phase BLDC motors in factory automation.

IC Role / Device Role / Timing Role: Reinforced-isolated driver enabling direct MCU interface without external level shifters or isolators.

Use Value: Dual independent UVLO and safety lock-down meet IEC 61800-5-1 functional safety requirements for drive system fault response.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel reinforced isolated gate driver applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si8275BD-IS	4 A/6 A drive, 45 ns propagation delay, 5 kVRMS reinforced isolation (UL 1577), no integrated SLDO	Lacks input-side voltage regulation; requires external 3.3 V LDO; lower CMTI (100 V/ns)	Preferred where board space permits discrete LDO and lower CMTI suffices for 650 V Si MOSFETs.
ADuM4223BRWZ	4 A/6 A drive, 55 ns propagation delay, 5 kVRMS reinforced isolation (UL 1577), no input noise filter	No hardware input glitch filter; higher propagation delay increases minimum dead time	Selected when analog feedback loop integration with ADI's iCoupler ecosystem is prioritized over timing precision.

Compared with Si8275BD-IS and ADuM4223BRWZ, the 2EDS8265HXUMA2 offers superior timing accuracy (37 ns vs. ≥45 ns), higher CMTI (>150 V/ns), and integrated SLDO flexibility-making it optimal for high-frequency SiC/GaN designs requiring minimal dead time and robust noise immunity.

Availability

2EDS8265HXUMA2 is available at Aetrix Electronics and suitable for server SMPS, EV on-board chargers, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and reinforced isolation compliance.

Supply support for 2EDS8265HXUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gallium nitride technologies.

The 2EDi product line targets high-reliability, fast-switching power conversion systems - specifically engineered to replace pulse transformers and optocouplers in half-bridge, totem-pole, and synchronous rectifier topologies.

FAQ

What is the maximum recommended switching frequency for 2EDS8265HXUMA2?

The device is characterized for stable operation up to 10 MHz PWM frequency, verified across temperature and process corners. This rating assumes proper PCB layout (minimized loop inductance), adequate gate resistor selection (Rg1/Rg2), and sufficient output supply decoupling. Real-world use in 500 kHz–2 MHz SiC/GaN converters is standard practice per Infineon application notes AN2021-05 and AN2022-11.

Does 2EDS8265HXUMA2 support bootstrap high-side supply configuration?

Yes - the VDDA pin accepts bootstrapped supply voltages up to 20 V, and its internal UVLO monitors this rail independently. The device is commonly used with diode-capacitor bootstrap networks in half-bridge LLC and resonant topologies, as shown in Figure 1 of the Rev 3.0 datasheet. GNDA must remain isolated from PGND to maintain channel integrity.

How is the SLDON pin used to configure input-side regulation?

SLDON has an internal pull-up to VDDI. When left unconnected or tied to VDDI, the internal 3.3 V SLDO is disabled and VDDI must be supplied externally at 3.3 V. When tied to GNDI, the SLDO activates, allowing VDDI to be supplied at 3.5–5.5 V while regulating down to 3.3 V - useful for sharing a single 5 V rail across controller and driver input stages.

Can 2EDS8265HXUMA2 drive both high-side and low-side CoolSIC™ MOSFETs in the same half-bridge?

Yes - its 4 A/8 A per-channel drive strength, >150 V/ns CMTI, and reinforced isolation make it suitable for driving both sides of a CoolSIC™ half-bridge. Layout best practices require separate GNDA/GNDB ground planes, symmetric gate routing, and localized VDDA/VDDB decoupling to maintain timing accuracy and noise immunity per Infineon's Layout Guide EB217.

2EDS8265HXUMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: EiceDRIVER™

Package/Case:: 16-SOIC (0.295", 7.50mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Driven Configuration:: Half-Bridge

Channel Type:: Independent

Number of Drivers:: 2

Gate Type:: N-Channel, P-Channel MOSFET

Voltage - Supply:: 20V

Logic Voltage - VIL, VIH:: -, 1.65V

Current - Peak Output (Source, Sink):: 4A, 8A

Input Type:: Non-Inverting

High Side Voltage - Max (Bootstrap):: -

Rise / Fall Time (Typ):: 6.5ns, 4.5ns

Operating Temperature:: -40°C ~ 125°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-DSO-16-30

2EDS8265HXUMA2 FAQ

1.How can I place an order for 2EDS8265HXUMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2EDS8265HXUMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2EDS8265HXUMA2 reliable?

The price and inventory of 2EDS8265HXUMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDS8265HXUMA2 is usually 5 days.

3.What payment methods are accepted for 2EDS8265HXUMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDS8265HXUMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2EDS8265HXUMA2?

2EDS8265HXUMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2EDS8265HXUMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2EDS8265HXUMA2?

For technical support, including 2EDS8265HXUMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDS8265HXUMA2 requirements.

6.How does Aetrix verify that 2EDS8265HXUMA2 is sourced from the original manufacturer or authorized distributors?

All 2EDS8265HXUMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDS8265HXUMA2 meets industry standards.

7.What is the process for return or replacement of 2EDS8265HXUMA2?

All 2EDS8265HXUMA2 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDS8265HXUMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2EDS8265HXUMA2 part is unused and in its original packaging.

Return procedure for 2EDS8265HXUMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…