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Infineon Technologies 2EDS9265HXUMA1

Part No.:
2EDS9265HXUMA1
Manufacturer:
Infineon Technologies
Category:
Gate Drivers
Package:
16-SOIC (0.295", 7.50mm Width)
Datasheet:
Aetrix2EDS9265HXUMA1.pdf
Description:
IC GATE DRVR HALF-BRIDGE 16SOIC
Quantity:
Payment:
Payment
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Inventory:769

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Product details

Overview

2EDS9265HXUMA1 from Infineon Technologies is a dual-channel, reinforced isolated MOSFET gate driver IC with coreless transformer isolation, delivering 4 A source / 8 A sink peak output current per channel, 37 ns typical propagation delay, ±3 ns channel-to-channel mismatch, and >150 V/ns CMTI - designed for high-reliability half-bridge switching in industrial SMPS and EV charging systems using CoolMOS™ or CoolGaN™ power devices.

For engineers reviewing the 2EDS9265HXUMA1 datasheet, 2EDS9265HXUMA1 pinout, 2EDS9265HXUMA1 application, or 2EDS9265HXUMA1 equivalent, this part supports fast-switching topologies requiring reinforced isolation (VIOTM = 8 kVpk), precise timing stability across –40°C to +150°C, and independent high-side/low-side drive capability in WB PG-DSO-16-30 package.

Technical Context

The 2EDS9265HXUMA1 implements two fully galvanically isolated gate driver channels using coreless transformer (CT) technology, enabling functional separation of input logic (3.3 V CMOS/TTL) and output power stages (4.5–20 V). Its internal UVLO monitors both input-side (8 V threshold) and output-side supplies, triggering safety lock-down on fault detection.

Timing accuracy is maintained via matched signal paths: propagation delay variance is limited to +7/–6 ns, and channel-to-channel skew is tightly controlled at ±3 ns. The device supports PWM inputs with 18 ns noise filtering and withstands common-mode transients up to 150 V/ns without false triggering - critical for high-dV/dt environments like LLC resonant converters.

Key Specifications

Parameter Value and Actual Design Meaning
Isolation Type Reinforced isolation per DIN V VDE V 0884-10 (2006-12), VIOTM = 8 kVpk, VIOSM = 6.25 kVpk (tested at 10 kVpk)
Output Drive Strength 4 A source / 8 A sink per channel - sufficient to rapidly charge/discharge gate capacitance of medium-voltage CoolMOS™ and CoolGaN™ devices
Propagation Delay Typ. 37 ns - enables stable operation up to 10 MHz PWM frequency with minimal dead-time uncertainty
CMTI >150 V/ns - prevents false turn-on/off during fast voltage transitions in high-side switch nodes
UVLO Thresholds Input-side: 8 V (±0.3 V); Output-side: 4 V or 8 V selectable - ensures safe disable before supply collapse
Operating Temperature –40°C to +150°C junction - qualified for industrial and automotive-grade thermal environments
Package WB PG-DSO-16-30 (10.3 mm × 10.3 mm) - wide-body SOIC with reinforced creepage/clearance for high-voltage isolation

Pinout & Package

2EDS9265HXUMA1 is housed in a wide-body DSO-16 package (PG-DSO-16-30) with 16 pins, optimized for reinforced isolation and thermal performance in high-power gate driving applications. Pin assignments are validated per Infineon's Rev 3.0 datasheet (2025-07-01).

Pin Circuit Role Design Meaning
1 INA CMOS/TTL input for channel A; internal pull-down - connects to PWM controller output for high-side or low-side control
2 INB CMOS/TTL input for channel B; internal pull-down - enables independent control of second switch in half-bridge or synchronous rectifier
3 VDDI 3.3 V input-side supply (SLDO enabled) - powers logic interface and isolation transmitter; bypass capacitor required
4 GNDI Input-side ground reference - separates control domain from power domain to maintain isolation integrity
5 DISABLE Active-high global disable - forces both outputs low when asserted, used for system fault shutdown or soft-start sequencing
8 SLDON SLDO enable control - tied to GNDI to activate internal 3.3 V regulator for VDDI when external supply exceeds 3.5 V
9 VDDA Output-side supply for channel A - powers high-side driver stage; typically bootstrapped or isolated auxiliary supply
10 OUTA High-current gate drive output for channel A - delivers 4 A/8 A to MOSFET gate with low-impedance path to GNDA
11 GNDA Channel A output ground - local return for high-side driver; must be routed with minimal inductance to reduce ringing
13 VDDB Output-side supply for channel B - powers low-side driver stage; referenced to GNDB, decoupled separately
14 OUTB High-current gate drive output for channel B - complements OUTA in complementary or independent switching configurations
15 GNDB Channel B output ground - dedicated return for low-side driver; avoids shared impedance with high-side return path

Key Features

Feature Design Value
Reinforced Isolation Certification UL1577 (5700 VRMS), VDE0884-10 (8 kVpk), EN/IEC 62368-1 - meets safety requirements for industrial and EV charging equipment
Timing Precision ±3 ns channel-to-channel mismatch and +7/–6 ns propagation delay variance - reduces dead-time margin needs and improves efficiency
Noise Immunity 18 ns digital input filter + >150 V/ns CMTI - suppresses EMI-induced glitches in noisy power converter environments
Fail-Safe UVLO Behavior Input-side UVLO <3 V triggers automatic output lock-down; output-side UVLO disables respective channel - prevents shoot-through
Flexible Power Architecture VDDI supports 3.3 V direct or >3.5 V with SLDO; VDDA/VDDB operate from 4.5–20 V - accommodates bootstrapped or isolated auxiliary supplies

Applications

Industrial SMPS EV Charging Stations

Use Scenario: 3.3 kW LLC resonant DC-DC converter in telecom rectifier module.

IC Role / Device Role / Timing Role: Dual-channel gate driver controlling high-side CoolGaN™ and low-side OptiMOS™ in half-bridge configuration with synchronized PWM and tight dead-time control.

Use Value: 37 ns propagation delay and ±3 ns matching enable <50 ns dead time, minimizing conduction loss while preventing cross-conduction.

Use Scenario: Bidirectional OBC (on-board charger) with dual active bridge topology.

IC Role / Device Role / Timing Role: Reinforced-isolated driver for primary-side SiC MOSFETs operating at 100–300 kHz with high dV/dt stress.

Use Value: >150 V/ns CMTI ensures reliable operation despite 10 kV/μs transients during AC line surges or load dumps.

Synchronous Rectification Motor Drives

Use Scenario: Secondary-side synchronous rectifier in 1 kW server PSU using 100 V OptiMOS™.

IC Role / Device Role / Timing Role: Low-side gate driver with fast turn-off (8 A sink) to minimize reverse recovery losses in rectifier FETs.

Use Value: 8 A sink current reduces gate discharge time to <20 ns, cutting body diode conduction period and improving efficiency by 0.8%.

Use Scenario: 7.5 kW three-phase inverter for industrial pump drive with discrete CoolMOS™ half-bridges.

IC Role / Device Role / Timing Role: High-reliability isolated driver providing independent control of upper/lower switches per phase leg.

Use Value: Reinforced isolation (8 kVpk) and –40°C to +150°C rating support long-term operation in enclosed motor control cabinets without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel reinforced isolated gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
2EDS8265H Same WB-DSO-16 package, identical 4 A/8 A drive strength, but 8 V input UVLO (vs. 13 V for 2EDS9265H) Preferred where lower input UVLO threshold aligns with 5 V controller rails; less suited for 12 V input-side bias designs Select 2EDS8265H if system uses 5 V logic supply and requires tighter UVLO hysteresis; otherwise 2EDS9265H offers wider input supply margin
Si8275BD-IS Silicon Labs part with 4 A/6 A drive, 40 ns propagation delay, 5 kVRMS reinforced isolation (UL1577), but no integrated SLDO Requires external LDO for 3.3 V logic supply; lacks SLDON pin flexibility and 18 ns input filter Choose Si8275BD-IS only if existing design already provides clean 3.3 V rail and prioritizes multi-source availability over timing precision

Compared with 2EDS8265H and Si8275BD-IS, the 2EDS9265HXUMA1 provides the highest input UVLO threshold (13 V), integrated SLDO control, and best-in-class channel matching (±3 ns), making it optimal for high-margin industrial power supplies where robustness and timing fidelity are critical.

Availability

2EDS9265HXUMA1 is available at Aetrix Electronics and suitable for industrial SMPS, EV charging stations, and motor drives requiring stable component supply, long lifecycle support, and certified reinforced isolation.

Supply support for 2EDS9265HXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon carbide and gallium nitride technologies.

The 2EDi product family targets high-efficiency, high-reliability power conversion systems - specifically engineered for fast-switching MOSFET and wide-bandgap device gate driving in industrial, telecom, and EV infrastructure.

FAQ

What is the maximum recommended switching frequency for 2EDS9265HXUMA1?

The 2EDS9265HXUMA1 supports PWM operation up to 10 MHz, as confirmed by its 37 ns typical propagation delay and +7/–6 ns delay variance. This allows stable use in hard-switched topologies up to 2 MHz and resonant converters (e.g., LLC) operating above 1 MHz, provided PCB layout minimizes parasitic inductance on gate loops.

Does 2EDS9265HXUMA1 require external bootstrap diodes or capacitors?

No - the 2EDS9265HXUMA1 itself does not integrate bootstrap circuitry. However, when used in high-side configurations, external bootstrap components (diode + capacitor) are required on the VDDA rail to generate the floating supply. The IC's GNDA pin serves as the local return for that bootstrap network, and layout must isolate it from power ground.

Can the DISABLE pin be left unconnected?

No - the DISABLE pin has an internal pull-down resistor, but leaving it floating risks unintended activation due to noise coupling. It must be actively driven low (to GNDI) for normal operation or pulled high (to VDDI) to disable both outputs. A 10 kΩ pull-down is recommended if unused in the system.

How is reinforced isolation verified for 2EDS9265HXUMA1?

Reinforced isolation is verified per DIN V VDE V 0884-10 (2006-12) with 8 kVpk transient isolation voltage and 10 kVpk surge testing (25 positive/negative pulses). It is also certified to UL1577 (5700 VRMS) and EN/IEC 62368-1, with test reports available from Infineon upon request - no external retesting is needed for end-equipment compliance.

2EDS9265HXUMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
EiceDRIVER™
Package/Case:
16-SOIC (0.295", 7.50mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
IGBT, SiC MOSFET
Voltage - Supply:
20V
Logic Voltage - VIL, VIH:
-, 1.65V
Current - Peak Output (Source, Sink):
4A, 8A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
650 V
Rise / Fall Time (Typ):
6.5ns, 4.5ns
Operating Temperature:
-40°C ~ 125°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-16-30

2EDS9265HXUMA1 FAQ

1.How can I place an order for 2EDS9265HXUMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2EDS9265HXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2EDS9265HXUMA1 reliable?

The price and inventory of 2EDS9265HXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDS9265HXUMA1 is usually 5 days.

3.What payment methods are accepted for 2EDS9265HXUMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDS9265HXUMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2EDS9265HXUMA1?

2EDS9265HXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2EDS9265HXUMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2EDS9265HXUMA1?

For technical support, including 2EDS9265HXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDS9265HXUMA1 requirements.

6.How does Aetrix verify that 2EDS9265HXUMA1 is sourced from the original manufacturer or authorized distributors?

All 2EDS9265HXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDS9265HXUMA1 meets industry standards.

7.What is the process for return or replacement of 2EDS9265HXUMA1?

All 2EDS9265HXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDS9265HXUMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2EDS9265HXUMA1 part is unused and in its original packaging.

Return procedure for 2EDS9265HXUMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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