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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies 56DN06B02ELEMXPSA1

Name: 56DN06B02ELEMXPSA1
Brand: Infineon Technologies
SKU: 56DN06B02ELEMXPSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 56DN06B02ELEMXPSA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: DO-200AB, B-PUK

Datasheet:: 56DN06B02ELEMXPSA1.pdf

Description:: DIODE GP 600V 11140A E-EUPEC-0

Quantity:: RFQ Add To RFQ list

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Product details

Overview

56DN06B02ELEMXPSA1 from Infineon Technologies is a high-power, press-pack silicon rectifier diode designed for industrial DC power conversion in low-voltage, high-current applications. It delivers 11,140 A average forward current at 90 °C case temperature, 81,000 A non-repetitive surge current, and features a low on-state voltage of 0.73 V (V_T0) with 0.024 mΩ slope resistance, enabling efficient operation in resistance welding and electroplating rectifiers.

For engineers reviewing the 56DN06B02ELEMXPSA1 datasheet, 56DN06B02ELEMXPSA1 pinout, 56DN06B02ELEMXPSA1 application, or 56DN06B02ELEMXPSA1 equivalent, key selection criteria include verified thermal resistance (R_thJC = 5.8 K/kW), clamping force range (30–45 kN), dual-sided cooling compatibility, and its rated V_RRM of 400–600 V for galvanic and welding systems requiring robust power cycling capability.

Technical Context

This device is a two-terminal, unidirectional, press-fit silicon rectifier diode with no integrated gate or control circuitry. Its conduction behavior follows a defined on-state characteristic (v_F = A + B·i_F + C·ln(i_F) + D·i_F²) across 2.1–37 kA, and it operates with a maximum junction temperature of 180 °C under continuous conduction.

Thermal performance is defined for two-sided forced cooling, with transient thermal impedance Z_thJC modeled using seven analytical RC elements. Mechanical mounting requires controlled clamping force (30–45 kN) between anode and cathode surfaces to ensure stable contact resistance and thermal transfer.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	400–600 V: Maximum repetitive reverse voltage the diode blocks without breakdown during AC line commutation or transient recovery.
I_FAVM	11,140 A @ T_C = 90 °C: Sustained DC forward current rating defining continuous power handling under specified heatsink conditions.
I_FSM	81,000 A @ t_P = 10 ms, T_vj = 25 °C: Peak short-circuit surge current capability used for weld transformer secondary protection sizing.
V_T0 / r_T	0.73 V / 0.024 mΩ: Threshold voltage and slope resistance defining on-state conduction loss profile at high current (8–37 kA).
R_thJC	5.8 K/kW (two-sided): Junction-to-case thermal resistance determining required heatsink capacity for safe 180 °C max junction operation.
Clamping Force	30–45 kN: Required mechanical compression load to maintain low-contact-resistance interface between Si pellet and copper electrodes.
Max Diameter / Height	56 mm Ø × 5 mm height: Physical envelope defining mounting hole pattern and stack integration in modular rectifier assemblies.

Pinout & Package

56DN06B02ELEMXPSA1 uses a press-pack, double-sided cooled, stud-type package with two terminals: Terminal 1 (Anode) and Terminal 2 (Cathode). No leadframe or plastic encapsulation - thermal and electrical paths are established via direct metal-to-silicon pressure contact under controlled clamping force.

Pin/Terminal	Circuit Role	Design Meaning
1 (Anode)	Forward current entry point	High-current input terminal; must be mounted to heatsink/anode-side cooler with compliant interface and torque-controlled clamping.
2 (Cathode)	Forward current exit point	High-current output terminal; electrically isolated from anode side but thermally coupled in two-sided cooling configuration.

Key Features

Feature	Design Value
High power cycling capability	Validated for >10⁵ cycles under ΔT_vj = 100 °C, enabling reliable use in intermittent high-duty-cycle resistance welding.
Low on-state losses	0.73 V threshold + 0.024 mΩ slope yields <1.2 kW conduction loss at 10 kA, reducing cooling system size and energy waste.
Two-sided cooling interface	Thermal path optimized for simultaneous anode- and cathode-side heat extraction, doubling effective surface area vs. single-sided packages.
Robust mechanical construction	110 g mass and 50 mm cathode diameter support stable mounting in high-vibration environments (50 Hz, 50 m/s²).

Applications

Resistance Welding Power Supply

Galvanic Rectification System

Use Scenario: Secondary-side rectification in medium-frequency inverter-based spot welders delivering pulsed 20–50 kA currents.

IC Role / Device Role / Timing Role: Uncontrolled power switch converting AC transformer output to DC weld current; conducts for full half-cycle with zero gate control.

Use Value: 81 kA I_FSM withstands weld fault currents; 5.8 K/kW R_thJC enables compact liquid-cooled busbar integration.

Use Scenario: Electrolyte current source in copper/zinc plating lines operating continuously at 12–24 V, 10–20 kA.

IC Role / Device Role / Timing Role: Mainline rectifier element in multi-diode parallel stacks supplying stable low-ripple DC to electrolytic cells.

Use Value: 11.1 kA I_FAVM supports high duty cycle; low V_T0/r_T minimizes voltage drop and improves process current regulation.

Low-Voltage High-Current DC Bus

Industrial Battery Charging Stack

Use Scenario: DC link rectification in large-scale aluminum smelting potlines requiring 15–30 kA per diode string.

IC Role / Device Role / Timing Role: Primary rectifying element in air- or water-cooled thyristor/diode hybrid converters feeding 4–6 V DC busbars.

Use Value: 180 °C T_vjmax allows operation in high-ambient furnace environments; 30–45 kN clamping ensures long-term contact integrity under thermal cycling.

Use Scenario: Grid-to-battery charging for 2–5 MW energy storage systems using phase-controlled rectifier bridges.

IC Role / Device Role / Timing Role: High-efficiency freewheeling and rectification component in dual-active-bridge or SCR-based chargers.

Use Value: 0.024 mΩ r_T reduces conduction loss by ~18% vs. legacy 50 mm diodes; dual-sided cooling simplifies thermal management in dense rack layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXYS MDD500-16N1	1600 V V_RRM, 5000 A I_FAVM, module-based press-pack with integrated heatsink interface	Higher voltage rating suits HVDC links; lower current rating requires parallel strings for 11 kA+ systems	Select when system reverse voltage exceeds 600 V or standardized module footprint is required.
Powerex CM1000HA-24F	2400 V V_RRM, 1000 A I_FAVM, stud-mount fast recovery diode with soft recovery	Designed for switching converters; unsuitable for pure rectification due to lower I_FAVM and higher V_F	Not recommended for low-voltage high-current rectification; consider only for snubbing or auxiliary circuits.

Compared with MDD500-16N1 and CM1000HA-24F, 56DN06B02ELEMXPSA1 uniquely balances ultra-high I_FAVM (11.1 kA), moderate V_RRM (600 V), and press-pack mechanical robustness-making it optimal for dedicated low-voltage industrial rectifier stacks where current density and thermal cycling reliability are primary constraints.

Availability

56DN06B02ELEMXPSA1 is available at Aetrix Electronics and suitable for resistance welding power supplies, galvanic rectification systems, and low-voltage high-current DC bus applications requiring stable component supply, long-life thermal cycling performance, and high-reliability press-pack construction.

Supply support for 56DN06B02ELEMXPSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, automotive ICs, and industrial control solutions, with global manufacturing and R&D infrastructure.

This diode belongs to Infineon's high-power discrete rectifier product line, engineered specifically for industrial electrochemical and resistive heating systems demanding extreme current density, mechanical durability, and thermal resilience under continuous high-load operation.

FAQ

What is the correct clamping force range for 56DN06B02ELEMXPSA1 installation?

The diode requires a controlled mechanical clamping force between 30 kN and 45 kN applied across the anode and cathode surfaces. This range ensures optimal contact resistance and thermal transfer without damaging the silicon pellet or deforming the copper electrodes. Use calibrated hydraulic or torque-controlled tooling; deviation outside this window risks premature failure or thermal runaway.

Can 56DN06B02ELEMXPSA1 be used with single-sided cooling?

No - the device is characterized and rated exclusively for two-sided cooling, as confirmed by its R_thJC = 5.8 K/kW specification and transient thermal model. Single-sided operation violates datasheet thermal limits and may cause junction overheating beyond 180 °C, even at reduced current. Mounting must provide active cooling interfaces on both anode and cathode faces.

What is the maximum allowable case temperature for continuous operation?

The maximum allowable case temperature is not fixed - it depends on operating current. At I_FAVM = 11,140 A, T_C must not exceed 90 °C; at 10,300 A, T_C may rise to 100 °C. The derating curve in the datasheet (page 8) defines T_C vs. I_FAVM; exceeding these limits risks accelerated aging or thermal runaway due to positive temperature coefficient of on-state voltage.

Does 56DN06B02ELEMXPSA1 have a specified reverse recovery time (t_rr)?

No - as a standard power rectifier diode (not a fast- or ultrafast-recovery type), 56DN06B02ELEMXPSA1 does not specify t_rr. Its design prioritizes low conduction loss and high surge capability over switching speed. It is intended for line-frequency or medium-frequency (≤2 kHz) rectification where reverse recovery is managed by circuit commutation, not device physics.

56DN06B02ELEMXPSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: DO-200AB, B-PUK

Packaging:: Bulk

Product Status:: Active

Technology:: Standard

Voltage - DC Reverse (Vr) (Max):: 600 V

Current - Average Rectified (Io):: 11140A

Voltage - Forward (Vf) (Max) @ If:: 940 mV @ 8000 A

Speed:: Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr):: -

Current - Reverse Leakage @ Vr:: 60 mA @ 600 V

Capacitance @ Vr, F:: -

Grade:: -

Qualification:: -

Mounting Type:: Clamp On

Supplier Device Package:: E-EUPEC-0

Operating Temperature - Junction:: 180°C (Max)

56DN06B02ELEMXPSA1 FAQ

1.How can I place an order for 56DN06B02ELEMXPSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 56DN06B02ELEMXPSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 56DN06B02ELEMXPSA1 reliable?

The price and inventory of 56DN06B02ELEMXPSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 56DN06B02ELEMXPSA1 is usually 5 days.

3.What payment methods are accepted for 56DN06B02ELEMXPSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 56DN06B02ELEMXPSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 56DN06B02ELEMXPSA1?

56DN06B02ELEMXPSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 56DN06B02ELEMXPSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 56DN06B02ELEMXPSA1?

For technical support, including 56DN06B02ELEMXPSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 56DN06B02ELEMXPSA1 requirements.

6.How does Aetrix verify that 56DN06B02ELEMXPSA1 is sourced from the original manufacturer or authorized distributors?

All 56DN06B02ELEMXPSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 56DN06B02ELEMXPSA1 meets industry standards.

7.What is the process for return or replacement of 56DN06B02ELEMXPSA1?

All 56DN06B02ELEMXPSA1 units undergo pre-shipment inspection (PSI). If there is an issue with 56DN06B02ELEMXPSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 56DN06B02ELEMXPSA1 part is unused and in its original packaging.

Return procedure for 56DN06B02ELEMXPSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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