Infineon Technologies 98-0343

Overview

IR2301(S) from Infineon Technologies (formerly International Rectifier) is a high-voltage, high-speed dual-channel gate driver IC for N-channel MOSFETs and IGBTs, featuring independent high-side (floating) and low-side (ground-referenced) output channels. It supports bootstrap operation up to +600 V, delivers 200 mA high-side and 350 mA low-side pulsed output current, and operates with 5–20 V gate supply voltage and 3.3/5/15 V logic-compatible inputs - used in half-bridge motor drives and SMPS power stages.

For engineers reviewing the IR2301(S) datasheet, IR2301(S) pinout, IR2301(S) application, or IR2301(S) equivalent, key selection criteria include matched propagation delay (≤50 ns), dV/dt immunity up to 50 V/ns, undervoltage lockout on both VCC and VB supplies, and ±5 V logic/power ground offset tolerance - critical for reliable high-side switching in industrial inverters and DC-DC converters.

Technical Context

The IR2301(S) integrates a proprietary HVIC (High-Voltage IC) process with latch-immune CMOS logic to enable monolithic high-side floating channel operation. Its level-shifting architecture uses pulse generation and UV detection to sustain stable gate drive under fast dV/dt transients up to 50 V/ns at VS node.

Both channels feature matched turn-on/turn-off propagation delays (typ. 220/200 ns), in-phase input-to-output response, and independent undervoltage lockout thresholds (VCCUV+ = 4.1 V, VBSUV+ = 4.1 V) with 0.3 V hysteresis - ensuring synchronized, fault-resilient switching in half-bridge topologies.

Key Specifications

Pinout & Package

Available in 8-lead PDIP (IR2301) and 8-lead SOIC (IR2301S) packages. Both share identical pinout mapping and thermal characteristics per datasheet Rev.D.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with IR2101(S) and IRS2001(S), the IR2301(S) provides superior timing accuracy, higher low-side sink current, and verified 50 V/ns dV/dt immunity - making it optimal for high-reliability, high-frequency half-bridge systems where shoot-through prevention and noise resilience are design-critical.

Availability

IR2301(S) is available at Aetrix Electronics and suitable for motor control inverters, industrial SMPS, solar microinverters, and UPS power stages requiring stable component supply across extended production lifecycles.

Supply support for IR2301(S) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in high-voltage IC design and ruggedized gate driver technology.

The IR2301(S) belongs to Infineon's legacy IR high-voltage driver product line, engineered specifically for cost-sensitive, high-reliability half-bridge applications requiring integrated bootstrap-capable gate drive with robust noise immunity.

FAQ

What is the maximum allowable dV/dt at the VS pin?

The IR2301(S) is rated for 50 V/ns dV/dt at the VS pin under all operating conditions. This specification is validated per datasheet test conditions and ensures immunity to false triggering during fast high-side switching transitions in 600 V systems. Exceeding this rate may cause erratic HO output behavior or latch-up.

Can IR2301(S) drive both MOSFETs and IGBTs?

Yes - the IR2301(S) is explicitly qualified to drive both N-channel power MOSFETs and IGBTs. Its 350 mA low-side sink current and 200 mA high-side source current meet typical gate charge requirements for 30–600 V devices. The datasheet confirms operation with IGBTs up to 600 V, including safe turn-off under inductive load conditions.

Is there a lead-free version available?

Yes - the IR2301S variant is the lead-free (PbF) version compliant with RoHS Directive 2011/65/EU. It shares identical electrical specifications, pinout, and thermal performance with the standard IR2301, and is offered in both 8-lead SOIC and PDIP packages per datasheet Rev.D.

What happens during VCC undervoltage?

When VCC drops below 3.8 V (negative-going threshold), both HO and LO outputs are forced low and held in UVLO state until VCC rises above 4.1 V. This dual-channel shutdown prevents partial turn-on and ensures safe, simultaneous disable of both high- and low-side switches during supply brownout events.