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Infineon Technologies AIDK08S65C5ATMA1
- Part No.:
- AIDK08S65C5ATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
AIDK08S65C5ATMA1.pdf
- Description:
- DISCRETE DIODES
- Quantity:
- Payment:
- Shipping:
Inventory:188
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Product details
Overview
AIDK08S65C5ATMA1 from Infineon is a 650 V / 8 A silicon carbide Schottky diode in D2PAK (PG-TO263-2-1) package with real 2-pin configuration, designed as a high-efficiency freewheeling/anti-parallel diode in traction inverters and DC-DC converters. It delivers zero reverse recovery charge, 1.7 V typical forward voltage at 8 A and 25 °C, 13 nC total capacitive charge at 400 V, and operates up to 175 °C junction temperature.
For engineers reviewing the AIDK08S65C5ATMA1 datasheet, AIDK08S65C5ATMA1 pinout, AIDK08S65C5ATMA1 application, or AIDK08S65C5ATMA1 equivalent, this part supports automotive-grade switching in high-frequency, high-power-density systems where thermal robustness, EMI reduction, and system-level efficiency gains over silicon are critical selection criteria.
Technical Context
This 5th-generation CoolSiC™ automotive Schottky diode uses thin-wafer SiC technology to achieve low figure-of-merit (Qc × Vf), enabling superior conduction and switching performance across full load and temperature ranges. Its unipolar structure eliminates minority-carrier storage, resulting in no reverse recovery current or associated losses.
The device is qualified per AEC-Q101, rated for 650 V repetitive peak reverse voltage and 364 A non-repetitive surge current (10 µs), with thermal resistance RthJC of 2.7–3.5 K/W and junction-to-ambient RthJA of 62 K/W under standard mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Supports DC-link voltages up to 650 V in automotive traction inverters and on-board chargers. |
| IF (TC=126°C) | 8 A - Continuous forward current rating at industry-standard heatsink temperature for sustained operation. |
| VF (Tj=25°C, IF=8A) | 1.7 V typ - Low conduction loss enabling reduced power dissipation and cooler system operation. |
| QC (VR=400 V) | 13 nC - Low capacitive charge minimizes switching energy loss and EMI generation during hard commutation. |
| Tj,max | 175 °C - Enables operation in under-hood environments without derating in high-temperature automotive applications. |
| RthJC | 2.7–3.5 K/W - Confirmed thermal path from junction to case supports efficient heatsink coupling in compact power modules. |
| dv/dt ruggedness | 100 V/ns - Withstands fast voltage transients in IGBT-coordinated switching without false turn-on or failure. |
Pinout & Package
Package: PG-TO263-2-1 (D2PAK), surface-mount, isolated tab, RoHS-compliant lead plating. Thermal pad electrically connected to cathode (Pin 1).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Case Tab) | Cathode | Primary current return path and thermal interface; must be soldered to copper pour for thermal and electrical integrity. |
| Pin 2 | Anode | Forward current input terminal; routed with low-inductance layout to minimize switching overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| No reverse recovery | Eliminates reverse recovery current and associated switching losses, enabling clean hard-switching with IGBTs. |
| Temperature-independent switching | Switching behavior remains stable from −40 °C to 175 °C, simplifying thermal design and control loop stability. |
| High surge current capability | 364 A non-repetitive peak (10 µs) supports fault-tolerant operation during short-circuit events in motor drives. |
| Low Qc × Vf figure of merit | Optimized trade-off between conduction and switching loss, improving efficiency across light-to-full load conditions. |
| AEC-Q101 qualified | Validated for automotive use including stress tests for temperature cycling, humidity, and mechanical shock. |
Applications
| Traction Inverter | On-Board Charger (OBC) |
|---|---|
Use Scenario: High-power bidirectional AC/DC conversion in electric vehicle drivetrains, operating at 8–16 kHz switching frequency with 400–800 V DC-link. IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode paired with 650 V IGBTs or SiC MOSFETs in three-phase inverter legs. Use Value: Reduces system conduction loss by ~35% vs. Si diodes and lowers heatsink mass by 40% due to 175 °C operation. | Use Scenario: Boost PFC stage and DC-DC isolation stage in 11 kW OBCs, requiring high efficiency and compact magnetics. IC Role / Device Role / Timing Role: Output rectifier and boost diode handling continuous 8 A forward current with minimal voltage drop and zero recovery noise. Use Value: Enables >96% system efficiency and reduces EMI filter size by eliminating reverse recovery spikes. |
| DC-DC Converter | Industrial Motor Drive |
Use Scenario: 48 V–800 V isolated bi-directional DC-DC converter for vehicle energy management (e.g., 48 V mild hybrid systems). IC Role / Device Role / Timing Role: Synchronous rectification diode in secondary-side LLC or phase-shifted full-bridge topologies. Use Value: Supports 200 kHz+ switching without penalty, increasing power density while maintaining <1.5 °C/W thermal rise. | Use Scenario: High-reliability industrial servo drives operating continuously at ambient temperatures up to 85 °C. IC Role / Device Role / Timing Role: Freewheeling diode in IGBT-based 3-phase output stage, exposed to repetitive 100 A surge currents. Use Value: Extends mean time between failures (MTBF) by 2.3× vs. Si diodes due to lower junction temperature rise and absence of thermal runaway risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPSC8H065DLF | 650 V / 8 A, TO-220AC package, VF = 1.8 V (typ), QC = 15 nC (VR=400 V) | Through-hole mounting; higher RthJC (4.5 K/W); not AEC-Q101 qualified | Preferred for cost-sensitive industrial prototypes where automotive qualification is not required. |
| WOLFSPEED C4D08120A | 1200 V / 8 A, TO-247-2L, VF = 1.85 V (typ), QC = 16.5 nC (VR=400 V) | Higher voltage rating increases margin but adds capacitance; larger footprint and higher cost | Selected when system architecture requires 1200 V blocking or legacy TO-247 board compatibility. |
Compared with STPSC8H065DLF and C4D08120A, AIDK08S65C5ATMA1 offers the lowest thermal resistance in surface-mount form, AEC-Q101 validation for automotive deployment, and best-in-class Qc × Vf balance for 650 V traction applications-making it optimal for space-constrained, thermally demanding EV power stages.
Availability
AIDK08S65C5ATMA1 is available at Aetrix Electronics and suitable for traction inverters, on-board chargers, and high-frequency DC-DC converters requiring stable component supply, automotive qualification, and high-temperature reliability.
Supply support for AIDK08S65C5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.
The CoolSiC™ Automotive Schottky Diode product line targets high-efficiency, high-reliability power conversion in electric vehicles-specifically engineered to complement Infineon's IGBT and CoolMOS™ portfolios in 650 V traction and charging systems.
FAQ
Is AIDK08S65C5ATMA1 pin-compatible with standard D2PAK silicon diodes?
No. While it shares the PG-TO263-2-1 footprint, its cathode is tied to the exposed thermal tab (Pin 1), unlike many Si diodes where the tab is isolated or anode-connected. PCB layout must assign the tab to cathode net and ensure adequate copper area for thermal transfer and current handling.
What is the maximum recommended gate drive slew rate when pairing with Infineon IGBTs?
The diode itself has no gate; however, when used as an anti-parallel device with IGBTs like IKW40N65ES5, the recommended dv/dt limit is ≤100 V/ns-matching the device's rated dv/dt ruggedness. Layout inductance must be minimized to avoid overshoot exceeding 650 V during turn-off.
Does AIDK08S65C5ATMA1 require a negative bias during turn-off?
No. As a majority-carrier Schottky diode, it has no minority-carrier storage and does not require active reverse biasing. Zero-recovery behavior allows safe operation with zero-voltage or hard-switched topologies without snubbers or negative gate drive coordination.
Can this diode be paralleled for higher current handling?
Yes-its positive temperature coefficient of forward voltage (VF increases with Tj) enables natural current sharing. Parallel operation requires matched layout symmetry, identical thermal paths, and individual Kelvin sensing for each device to ensure balanced dynamic current distribution under transient conditions.
AIDK08S65C5ATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolSiC™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 8 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 50 µA @ 650 V
- Capacitance @ Vr, F:
- 248pF @ 1V, 1MHz
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-2
- Operating Temperature - Junction:
- -40°C ~ 175°C
AIDK08S65C5ATMA1 FAQ
1.How can I place an order for AIDK08S65C5ATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for AIDK08S65C5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AIDK08S65C5ATMA1 reliable?
The price and inventory of AIDK08S65C5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIDK08S65C5ATMA1 is usually 5 days.
3.What payment methods are accepted for AIDK08S65C5ATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIDK08S65C5ATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AIDK08S65C5ATMA1?
AIDK08S65C5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AIDK08S65C5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AIDK08S65C5ATMA1?
For technical support, including AIDK08S65C5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIDK08S65C5ATMA1 requirements.
6.How does Aetrix verify that AIDK08S65C5ATMA1 is sourced from the original manufacturer or authorized distributors?
All AIDK08S65C5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIDK08S65C5ATMA1 meets industry standards.
7.What is the process for return or replacement of AIDK08S65C5ATMA1?
All AIDK08S65C5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIDK08S65C5ATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AIDK08S65C5ATMA1 part is unused and in its original packaging.
Return procedure for AIDK08S65C5ATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AIDK08S65C5ATMA1 Tags
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