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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Infineon Technologies AIDK12S65C5ATMA1

Name: AIDK12S65C5ATMA1
Brand: Infineon Technologies
SKU: AIDK12S65C5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIDK12S65C5ATMA1

Manufacturer:: Infineon Technologies

Category:: Single Diodes

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: AIDK12S65C5ATMA1.pdf

Description:: DISCRETE DIODES

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Product details

Overview

AIDK12S65C5ATMA1 from Infineon is a 650 V, 12 A silicon carbide Schottky diode in D2PAK (PG-TO263-2-1) package with real 2-pin configuration, designed as a high-efficiency freewheeling/anti-parallel diode in traction inverters and DC-DC converters. It delivers zero reverse recovery charge, 1.7 V typical forward voltage at 12 A/25°C, 175°C maximum junction temperature, and 18 nC total capacitive charge at 400 V.

For engineers reviewing the AIDK12S65C5ATMA1 datasheet, AIDK12S65C5ATMA1 pinout, AIDK12S65C5ATMA1 application in automotive traction inverters or on-board chargers, or AIDK12S65C5ATMA1 equivalent for SiC Schottky replacement in 650 V systems, this page provides verified electrical, thermal, and packaging data aligned with AEC-Q101 qualification.

Technical Context

This 5th-generation CoolSiC™ automotive Schottky diode uses thin-wafer SiC technology to achieve low figure-of-merit (Qc × Vf), enabling high-frequency operation without reverse recovery losses. Its dv/dt ruggedness of 100 V/ns and surge current capability up to 505 A (10 µs) support robust switching in hard-switched topologies.

Thermal resistance R_thJC is 1.9–2.4 K/W, enabling high power dissipation (62 W at T_C = 25°C) while maintaining T_j ≤ 175°C. The device operates across –40°C to +175°C and is qualified per AEC-Q101 for automotive underhood applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_RRM	650 V - supports DC-link voltages up to 650 V in EV traction inverters and industrial PFC stages
I_F (T_C = 124°C)	12 A - continuous conduction capability at elevated case temperatures without derating
V_F (12 A, 25°C)	1.7 V typ - reduces conduction loss vs. Si diodes, improving system efficiency by ~1–2% in 10–20 kHz converters
Q_C (400 V)	18 nC - enables fast, low-loss turn-off in synchronous rectification and snubberless designs
R_thJC	1.9–2.4 K/W - allows direct mounting to heatsink with minimal thermal interface resistance for compact thermal design
T_j,max	175°C - enables operation in high-ambient environments such as engine bay or motor control enclosures
I_F,SM (10 ms)	50 A @ T_C = 150°C - sustains short-term overload during vehicle acceleration or fault transients

Pinout & Package

Package: PG-TO263-2-1 (D2PAK), surface-mount, isolated tab, Pb-free, RoHS-compliant. Thermal pad electrically connected to cathode (Pin 1).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Cathode	Electrically active thermal pad; must be soldered to PCB copper pour for thermal and electrical return path
Pin 2	Anode	High-current input terminal; connects to switching node in half-bridge leg or boost inductor output

Key Features

Feature	Design Value
No reverse recovery charge (Q_rr = 0)	Eliminates switching loss and associated EMI in hard-switched converters, enabling >100 kHz operation
Temperature-independent switching behavior	Forward voltage and capacitance remain stable from –40°C to 175°C, simplifying thermal compensation
AEC-Q101 qualified	Validated for automotive underhood use including vibration, thermal cycling, and humidity testing
High dv/dt ruggedness (100 V/ns)	Withstands steep voltage transients in IGBT-based inverters without false turn-on or failure
Low Q_C × V_F figure of merit	Optimizes trade-off between conduction and switching loss for high-power-density 650 V systems

Applications

Traction Inverter

On-Board Charger (OBC)

Use Scenario: Bidirectional power conversion in EV motor drives, operating at 8–16 kHz with peak DC-link voltage up to 650 V.

IC Role / Device Role / Timing Role: Anti-parallel freewheeling diode across IGBTs in three-phase inverter legs, conducting during dead-time and reactive energy return.

Use Value: Zero Q_rr eliminates tail current loss, reducing inverter thermal load by 8–12 W per phase versus Si diodes.

Use Scenario: Boost PFC stage and isolated DC-DC stage in 11 kW OBC, operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Output rectifier in LLC resonant converter and boost diode in active PFC, handling 12 A RMS with low conduction loss.

Use Value: 1.7 V V_F and 18 nC Q_C reduce conduction + switching loss by 35% vs. Si, enabling smaller heatsinks and higher power density.

DC-DC Converter (400V–12V)

Industrial Solar Inverter

Use Scenario: High-efficiency isolated bidirectional DC-DC for 400 V battery-to-12 V auxiliary supply in BEVs.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side full-bridge, operating with gate-driven synchronous control.

Use Value: Low V_F minimizes conduction loss at light loads; absence of reverse recovery prevents shoot-through risk during synchronous timing.

Use Scenario: String-level DC optimization and central inverter boost stage in commercial solar farms.

IC Role / Device Role / Timing Role: Freewheeling diode in interleaved boost converters, exposed to ambient temperatures up to 70°C and solar UV degradation.

Use Value: 175°C T_j,max and AEC-Q101 reliability ensure >25-year field life with no derating at 60°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STPSC12065DLF	Same 650 V/12 A rating; 1.85 V V_F (12 A, 25°C); 22 nC Q_C; TO-220AC package with insulated tab	Requires mechanical isolation mount; higher V_F increases conduction loss by ~0.15 V	Preferred where through-hole assembly or legacy footprint compatibility is required
WOLFSPEED C4D10120A	650 V/10 A; 1.65 V V_F; 15 nC Q_C; TO-247-2L package; lower I_F rating	Derated for 12 A continuous use; requires larger heatsink due to higher R_thJC (3.0 K/W)	Selected when lowest possible Q_C dominates over current rating in high-frequency resonant converters

Compared with STPSC12065DLF and C4D10120A, AIDK12S65C5ATMA1 offers optimal balance of current rating, low Q_C, and thermally efficient D2PAK packaging-making it the preferred choice for space-constrained, high-reliability automotive traction and OBC designs.

Availability

AIDK12S65C5ATMA1 is available at Aetrix Electronics and suitable for traction inverters, on-board chargers, and DC-DC converters requiring stable component supply with automotive-grade reliability and traceable sourcing.

Supply support for AIDK12S65C5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

The CoolSiC™ Automotive Schottky Diode 650 V G5 product line targets high-efficiency, high-reliability power conversion in electric vehicles-specifically engineered to replace silicon diodes in traction inverters, OBCs, and DC-DC stages while meeting AEC-Q101 requirements.

FAQ

Is AIDK12S65C5ATMA1 pin-compatible with standard D2PAK silicon diodes?

No. While it shares the PG-TO263-2-1 footprint, its cathode is tied to the thermal tab (Pin 1), requiring PCB layout verification to avoid shorting. Unlike many Si diodes, it has no internal isolation between tab and cathode, so thermal pad must be routed to cathode net-not ground.

What is the maximum recommended case temperature for continuous 12 A operation?

The datasheet specifies I_F = 12 A at T_C = 124°C with duty cycle D = 1. Operation above 124°C requires derating per Figure 2 in the datasheet; at T_C = 135°C, max I_F drops to ~10.5 A to maintain T_j ≤ 175°C.

Does AIDK12S65C5ATMA1 require a gate resistor or snubber network?

No gate resistor is needed-it is a passive diode. However, a small RC snubber (e.g., 10 Ω + 100 pF) across anode-cathode is recommended in high-di/dt IGBT circuits to suppress voltage overshoot caused by stray inductance, leveraging its 100 V/ns dv/dt rating.

Can AIDK12S65C5ATMA1 be used in non-automotive industrial applications?

Yes. Though AEC-Q101 qualified, its 175°C T_j,max, robust surge rating (505 A), and low Q_C make it suitable for industrial UPS, solar inverters, and server PSUs. No automotive-specific features limit its use-only qualification testing confirms reliability under automotive stress profiles.

AIDK12S65C5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: SiC (Silicon Carbide) Schottky

Voltage - DC Reverse (Vr) (Max):: 650 V

Current - Average Rectified (Io):: 12A

Voltage - Forward (Vf) (Max) @ If:: 1.7 V @ 12 A

Speed:: No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr):: 0 ns

Current - Reverse Leakage @ Vr:: 70 µA @ 650 V

Capacitance @ Vr, F:: 363pF @ 1V, 1MHz

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-2

Operating Temperature - Junction:: -40°C ~ 175°C

AIDK12S65C5ATMA1 FAQ

1.How can I place an order for AIDK12S65C5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIDK12S65C5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIDK12S65C5ATMA1 reliable?

The price and inventory of AIDK12S65C5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIDK12S65C5ATMA1 is usually 5 days.

3.What payment methods are accepted for AIDK12S65C5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIDK12S65C5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIDK12S65C5ATMA1?

AIDK12S65C5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIDK12S65C5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIDK12S65C5ATMA1?

For technical support, including AIDK12S65C5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIDK12S65C5ATMA1 requirements.

6.How does Aetrix verify that AIDK12S65C5ATMA1 is sourced from the original manufacturer or authorized distributors?

All AIDK12S65C5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIDK12S65C5ATMA1 meets industry standards.

7.What is the process for return or replacement of AIDK12S65C5ATMA1?

All AIDK12S65C5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIDK12S65C5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIDK12S65C5ATMA1 part is unused and in its original packaging.

Return procedure for AIDK12S65C5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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