Diodes Incorporated AP2210N-3.0TRE1

Overview

AP2210N-3.0TRE1 from Diodes Incorporated is a 300mA ultra-low dropout (ULDO) linear regulator with fixed 3.0V output, 250mV typical dropout at full load, ±1% output voltage accuracy, and 75dB PSRR at 100Hz. It delivers low-noise power for RF front-end circuits, battery-powered handheld devices, and noise-sensitive analog signal chains.

For engineers reviewing the AP2210N-3.0TRE1 datasheet, AP2210N-3.0TRE1 pinout, AP2210N-3.0TRE1 application, or AP2210N-3.0TRE1 equivalent, key selection criteria include dropout performance under 300mA load, standby current ≤1µA, thermal shutdown behavior, reverse current protection, and SOT-23-5 package compatibility with bypass capacitor routing.

Technical Context

The AP2210N-3.0TRE1 uses a PMOS pass transistor architecture enabling ultra-low dropout and inherent reverse current blocking without external components. Its bandgap reference and error amplifier deliver tight line/load regulation (≤4.5mV/≤6mV) across -40°C to +125°C junction temperature.

Integrated CMOS/TTL-compatible enable input (VIH = 2.0V, VIL = 0.4V) controls low-power shutdown mode, reducing quiescent current to 0.01µA typical. The BYP/ADJ pin accepts a 100pF capacitor to reduce output noise to 260nV/√Hz while maintaining stability with 2.2µF ceramic output capacitance.

Key Specifications

Pinout & Package

SOT-23-5 surface-mount package with matte tin-plated leads, RoHS-compliant and halogen-free ("Green"). Moisture sensitivity level 3 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar ULDO regulator applications.

Compared with MCP1700-3002E/TO and XC6206P302MR-G, AP2210N-3.0TRE1 uniquely combines 300mA capability, 250mV dropout, 0.01µA shutdown, and reverse current protection in SOT-23-5-enabling simpler, more robust power architectures in battery-constrained RF systems.

Availability

AP2210N-3.0TRE1 is available at Aetrix Electronics and suitable for cellular handset power management, RF front-end bias supply, portable medical sensor hubs, and industrial IoT edge nodes requiring stable component supply across production lifecycles.

Supply support for AP2210N-3.0TRE1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs for power management, signal integrity, and connectivity applications.

The AP2210 series belongs to Diodes' high-performance ULDO regulator product line, designed specifically for noise-sensitive, battery-powered RF and portable electronics where dropout, PSRR, and standby current are critical.

FAQ

What is the minimum input voltage required for AP2210N-3.0TRE1 to maintain regulation at 300mA load?

The minimum input voltage is 4.0V (VOUT + 1V), based on the 250mV typical dropout at 300mA. At lower VIN, output voltage drops below specification; operation below 4.0V risks degraded PSRR and potential dropout-induced system reset. Input must remain within 4.0V–13.2V per recommended operating conditions.

Can AP2210N-3.0TRE1 be used without the 100pF bypass capacitor on the BYP pin?

Yes, it operates stably without the 100pF capacitor, but output noise increases from 260nV/√Hz to approximately 450nV/√Hz. The capacitor is optional for noise-critical applications like RF synthesizers or high-resolution ADC references, but not required for basic regulation stability with 2.2µF COUT.

Does AP2210N-3.0TRE1 require an external diode for reverse current protection?

No. The device integrates reverse current protection, eliminating the need for an external blocking diode. This reduces BOM cost, PCB area, and forward voltage drop-particularly beneficial in low-input-voltage battery systems where every millivolt of headroom matters.

How does thermal shutdown behave during continuous overload?

When junction temperature exceeds +150°C, internal thermal shutdown disables the pass transistor until temperature falls by ~20°C, then automatically recovers. This hiccup-mode protection prevents permanent damage during sustained overloads or inadequate heatsinking, with no latch-up or manual reset required.