Infineon Technologies AUIR08152STR

Overview

AUIR08152STR from Infineon Technologies is a high-voltage, automotive-qualified buffer gate driver IC designed for IGBT and MOSFET gate control in high-power inverters. It delivers ±10 A peak output current, operates from 13 V to 25 V supply, supports −10 V negative gate bias, and features separate Ron/Roff resistors, under-voltage lockout, and gate clamping during supply loss.

For engineers reviewing the AUIR08152STR datasheet, AUIR08152STR pinout, AUIR08152STR application, or AUIR08152STR equivalent, key selection criteria include dv/dt immunity via negative bias, full-time ON capability, shoot-through prevention with self-clamping, low propagation delay (<350 ns), and SOIC8 packaging for automotive powertrain gate drive stages.

Technical Context

The AUIR08152STR functions as a high-current buffer stage between pre-driver ICs (e.g., IR2181S) and power switches, enabling robust gate drive in floating high-side and grounded low-side configurations. Its dual-supply architecture (Vcc/Vee) supports −10 V gate pull-down for enhanced noise immunity during fast dV/dt transients in EV/HEV inverters.

It implements active gate clamping when VCB falls below 2.8 V, maintaining OUTH pull-up via internal PMOS for ≥3 µs even during bootstrap capacitor discharge. The LPM pin enables low-power mode with reduced quiescent current (≤2 mA on Vee), while IN/LPM logic controls output state per truth table with hysteresis on both inputs.

Key Specifications

Pinout & Package

Package: SOIC8, surface-mount, 150 °C rated junction temperature, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current gate driver buffer applications.

Compared with IR2181S and UCC21520, the AUIR08152STR uniquely combines automotive-grade −10 V gate bias, ±10 A drive, and self-clamping-making it optimal for high-reliability, high-dv/dt traction inverter stages where discrete buffering and bias control are essential.

Availability

AUIR08152STR is available at Aetrix Electronics and suitable for EV traction inverters, onboard chargers, and DC fast charging modules requiring stable component supply, AEC-Q100 compliance, and long-term automotive lifecycle support.

Supply support for AUIR08152STR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs.

The AUIR08152STR belongs to Infineon's high-voltage IC (HVIC) buffer family, engineered specifically for robust gate drive in electric vehicle powertrains where dv/dt immunity, negative bias, and fail-safe clamping are mission-critical.

FAQ

What is the purpose of the CB pin on the AUIR08152STR?

The CB (bootstrap capacitor) pin connects to an external 10–47 nF ceramic capacitor that charges during low-side conduction to generate the floating Vcc supply needed for high-side gate drive. It enables operation in half-bridge topologies without isolated supplies, with clamping activation if voltage drops below 2.8 V.

Can the AUIR08152STR drive SiC MOSFETs directly?

Yes-the AUIR08152STR supports ±10 A peak current and <350 ns propagation delay, making it suitable for driving medium-to-high gate-charge SiC MOSFETs (Qg ≤ 120 nC). External Ron/Roff resistors must be selected to limit di/dt and manage ringing; negative bias improves Miller immunity but is optional for SiC.

How does the LPM pin affect power consumption?

When LPM = GND, the AUIR08152STR enters low-power mode, reducing Vee supply current to ≤2 mA (vs. ≤8 mA in normal mode). This cuts quiescent loss in standby or light-load conditions while preserving full drive capability upon LPM = Vcc assertion-critical for thermal management in sealed power modules.

Is external decoupling required on Vcc and Vee pins?

Yes-Infineon specifies 22–33 µF low-ESR electrolytic or polymer capacitors on both Vcc and Vee rails, placed within 5 mm of the pins. These suppress supply ripple during 10 A switching transients and prevent UVLO triggering; ceramic bypass caps (100 nF) are also recommended adjacent to each supply pin.