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Infineon Technologies AUIR3200STR

Part No.:
AUIR3200STR
Manufacturer:
Infineon Technologies
Category:
Gate Drivers
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAUIR3200STR.pdf
Description:
IC GATE DRVR HIGH-SIDE 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,870

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Product details

Overview

AUIR3200STR from Infineon Technologies is an automotive-grade high-side MOSFET driver IC designed for low-RDS(on) power switches in 12 V/24 V vehicle systems. It delivers 5.7 V gate drive output, supports 6–36 V supply operation, integrates VDS-based short-circuit protection with programmable threshold (via external RVDS), over-temperature shutdown via PTC interface, reverse-battery protection, and diagnostic feedback - deployed in engine control modules for solenoid actuation.

For engineers reviewing the AUIR3200STR datasheet, AUIR3200STR pinout, AUIR3200STR application, or AUIR3200STR equivalent, this page provides verified functional context, SOIC-8 package mapping, real-world protection timing values (e.g., 22 µs VDS blanking), diagnostic pulse width (10 ms), and validated alternatives for high-side gate driving in ASIL-B-relevant power stages.

Technical Context

The AUIR3200STR implements a charge-pump-assisted high-side driver architecture with integrated bootstrap regulation, enabling stable 5.7 V gate voltage across 6–36 V battery input. Its protection logic combines analog VDS sensing (with 15–35 µs turn-on blanking) and PTC-based thermal monitoring (5 kΩ typical trip point), both feeding into a fault-state diagnostic output.

It features dual-level input hysteresis (0.5 V typ.), UVLO at 5.2–5.9 V, and sleep-mode entry within 15 ms after fault detection. The internal 100 Ω pull-down on the PTC pin and 150 kΩ internal resistor on IN/DG support direct connection to microcontroller GPIOs without external biasing.

Key Specifications

ParameterValue and Actual Design Meaning
Supply Voltage Range6–36 V - Operates across cold-crank (6 V) to load-dump (36 V) automotive transients
Gate Output Voltage5.7 V typ. - Sufficient to fully enhance low-RDS(on) N-channel MOSFETs in high-current loads
VDS Protection Blanking Time22 µs typ. - Prevents false trip during MOSFET turn-on transition
Diagnostic Pulse Width10 ms - Provides unambiguous fault signaling to MCU without requiring additional timing circuitry
Input Hysteresis0.5 V typ. - Ensures noise immunity against EMI in under-hood environments
Thermal Trip Threshold5 kΩ PTC resistance (typ.) - Matches common automotive PTC sensors for accurate junction-temperature correlation
UVLO Threshold5.2–5.9 V - Prevents erratic operation during battery brown-out conditions

Pinout & Package

Package: SOIC-8 (SO-8), surface-mount, 150 °C rated, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
VCCPositive supply inputAccepts 6–36 V battery rail; includes internal UVLO and charge pump enable
GNDGround referenceCommon return for logic, gate drive, and protection circuits
IN/DGInput and diagnostic outputCMOS-compatible input with hysteresis; open-drain diagnostic output during fault
VDSVDS sense inputConnects to MOSFET drain to monitor conduction loss for short-circuit detection
PTCThermal sensor interfaceAccepts PTC thermistor; internal 10 kΩ pull-down enables direct sensor connection
CBOOTBootstrap capacitor nodeDrives external bootstrap capacitor to sustain high-side gate voltage during continuous ON
SSource referenceConnects to MOSFET source; used as local ground reference for VDS sensing
GGate drive outputDelivers up to 160 mA peak current to charge/discharge MOSFET gate capacitance

Key Features

FeatureDesign Value
Programmable short-circuit thresholdSet via external RVDS; enables precise current-limit tuning for specific MOSFET RDS(on) and load
Reverse-battery protectionActivates MOSFET during reverse polarity to prevent system damage - no external diode required
Integrated PTC interfaceInternal 10 kΩ pull-down and 2 V comparator threshold simplify thermal monitoring design
Diagnostic feedbackDedicated open-drain output pulses 10 ms low during fault - directly readable by MCU GPIO
Low quiescent current1 µA sleep-mode current extends battery life in always-on vehicle modules

Applications

Engine Control Unit (ECU)Transmission Control Module (TCM)

Use Scenario: Driving high-current solenoids for variable valve timing (VVT) actuators.

IC Role / Device Role / Timing Role: High-side gate driver enabling precise PWM-controlled MOSFET switching with real-time fault reporting.

Use Value: Eliminates need for discrete protection circuitry while providing deterministic 10 ms diagnostic pulse for ISO 26262 ASIL-B fault handling.

Use Scenario: Controlling clutch engagement solenoids in automatic transmissions.

IC Role / Device Role / Timing Role: Robust high-side driver with VDS-based overcurrent detection and thermal derating via PTC sensor.

Use Value: Enables safe current limiting during gear-shift surges and prevents thermal runaway during prolonged duty cycles.

Body Control Module (BCM)Electric Power Steering (EPS)

Use Scenario: Managing window lift motors and seat adjustment actuators.

IC Role / Device Role / Timing Role: Fault-tolerant high-side switch with reverse-battery and ground-loss protection.

Use Value: Survives jump-start misconnections and maintains safe shutdown behavior during wiring faults.

Use Scenario: Driving assist motor phase drivers in column-assist EPS systems.

IC Role / Device Role / Timing Role: Gate driver with fast 1 µs rise/fall times and integrated short-circuit blanking.

Use Value: Supports rapid torque response while avoiding false trips during motor commutation transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side MOSFET driver applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
TPS2HB35-Q1Higher gate drive current (2 A peak), integrated current sense amplifier, no PTC interfaceRequires external current-sense resistor and ADC; lacks thermal trip via PTCPreferred when precise current measurement is needed over thermal trip simplicity
LM5069MMX-2/NOPBHot-swap controller with adjustable current limit and soft-start; not a gate driverDesigned for inrush control and overcurrent shutdown - does not drive MOSFET gates directlyOnly suitable where gate-driving function is handled separately

Compared with TPS2HB35-Q1 and LM5069MMX-2/NOPB, the AUIR3200STR uniquely integrates VDS-based short-circuit detection, PTC thermal monitoring, and reverse-battery activation in a single SOIC-8 package - reducing BOM count and PCB area for cost-sensitive automotive power stages.

Availability

AUIR3200STR is available at Aetrix Electronics and suitable for engine control units, transmission control modules, body control modules, and electric power steering systems requiring stable component supply across automotive production lifecycles.

Supply support for AUIR3200STR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs.

The AUIR3200STR belongs to Infineon's Automotive Intelligent Power Switch (IPS) product line, engineered specifically for robust, protected high-side switching in 12 V/24 V vehicle subsystems with ASIL-B compliance requirements.

FAQ

What is the purpose of the CBOOT pin?

The CBOOT pin connects to an external bootstrap capacitor that supplies the floating high-side gate drive voltage. During MOSFET conduction, the internal charge pump replenishes the capacitor to maintain ≥5.7 V gate-to-source voltage - essential for sustaining full enhancement of N-channel MOSFETs in high-side configurations.

How does the VDS-based short-circuit protection work?

VDS protection monitors the voltage drop across the external MOSFET's drain-to-source terminals. When VDS exceeds the threshold set by RVDS, the driver disables the gate output and asserts the diagnostic pin. A 22 µs blanking window prevents false triggering during MOSFET turn-on transitions.

Can the AUIR3200STR drive multiple MOSFETs in parallel?

No - the AUIR3200STR is designed to drive a single high-side N-channel MOSFET. Its 160 mA peak gate drive current and internal timing parameters assume one MOSFET load. Parallel driving would exceed gate charge delivery capability and compromise protection response accuracy.

Is external RVDS required for operation?

Yes - RVDS is mandatory to define the short-circuit current threshold. Without it, VDS protection remains disabled. The recommended maximum value is 2.9 kΩ; exceeding this may cause latch-up due to comparator instability under temperature variation.

AUIR3200STR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Driven Configuration:
High-Side
Channel Type:
Single
Number of Drivers:
1
Gate Type:
N-Channel MOSFET
Voltage - Supply:
6V ~ 36V
Logic Voltage - VIL, VIH:
0.9V, 2.7V
Current - Peak Output (Source, Sink):
-
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
1µs, 1µs
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-DSO-8-904

AUIR3200STR FAQ

1.How can I place an order for AUIR3200STR through Aetrix?

Please submit a Request for Quotation (RFQ) for AUIR3200STR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AUIR3200STR reliable?

The price and inventory of AUIR3200STR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AUIR3200STR is usually 5 days.

3.What payment methods are accepted for AUIR3200STR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AUIR3200STR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AUIR3200STR?

AUIR3200STR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AUIR3200STR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AUIR3200STR?

For technical support, including AUIR3200STR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AUIR3200STR requirements.

6.How does Aetrix verify that AUIR3200STR is sourced from the original manufacturer or authorized distributors?

All AUIR3200STR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AUIR3200STR meets industry standards.

7.What is the process for return or replacement of AUIR3200STR?

All AUIR3200STR units undergo pre-shipment inspection (PSI). If there is an issue with AUIR3200STR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AUIR3200STR part is unused and in its original packaging.

Return procedure for AUIR3200STR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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