Infineon Technologies AUIRS20161S

Overview

AUIRS20161S from Infineon Technologies (formerly International Rectifier) is an automotive-grade high-side gate driver IC with integrated VS-to-GND recharge NMOS, designed to drive N-channel power MOSFETs or IGBTs in high-side configurations up to 150 V offset. It features 5 V-compatible CMOS Schmitt-trigger inputs, 250 mA peak output current, 150 ns typical propagation delay, and immunity to –Vs spikes and dV/dt noise. Used in diesel/gasoline direct injection systems.

For engineers reviewing the AUIRS20161S datasheet, AUIRS20161S pinout, AUIRS20161S application, or AUIRS20161S equivalent, key selection criteria include its 150 V floating supply offset capability, internal Vs recharge function, automotive AEC-Q100 qualification, SOIC-8 package, and robust latch-immune HVIC process - critical for solenoid and common rail injector control in harsh automotive environments.

Technical Context

The AUIRS20161S integrates a high-voltage level-shifting circuit and a ruggedized CMOS driver stage using proprietary HVIC technology. Its input stage uses inverted Schmitt-trigger logic with internal pull-up (IN) and pull-down (RES), enabling noise-immune digital control under high dV/dt conditions.

It implements an internal low-side NMOS switch to actively recharge the bootstrap capacitor (VS-to-GND path), eliminating external diode and reducing layout complexity. The output stage delivers ±250 mA peak source/sink current into capacitive loads, supporting fast switching of power devices at up to 200 kHz with 70 ns / 6 µs deadtime asymmetry.

Key Specifications

Pinout & Package

Package: 8-lead SOIC (SOIC-8N), RoHS-compliant, moisture sensitivity level MSL3 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side gate driver applications.

Compared with IRS2007M and UCC27712QDRQ1, the AUIRS20161S uniquely combines AEC-Q100 qualification, 150 V offset, and integrated VS recharge - reducing component count and validation effort specifically for automotive injector modules.

Availability

AUIRS20161S is available at Aetrix Electronics and suitable for diesel direct injection, gasoline direct injection, and common rail injector control requiring stable component supply across automotive production lifecycles.

Supply support for AUIRS20161S includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with deep expertise in high-voltage integration and automotive qualification.

The AUIRS20161S belongs to Infineon's automotive high-side driver product line, engineered specifically for precision, noise-immune control of solenoid and injector power stages in modern internal combustion engines.

FAQ

What is the purpose of the internal VS-to-GND recharge NMOS?

The internal NMOS provides an active low-side path to recharge the bootstrap capacitor referenced to VS, replacing the traditional external diode. This eliminates reverse recovery losses and improves reliability in high-duty-cycle injector applications. It operates automatically during the low phase of the IN signal, ensuring consistent VBS voltage without external components or timing constraints.

Can AUIRS20161S drive IGBTs directly?

Yes - the AUIRS20161S is explicitly specified to drive both N-channel MOSFETs and IGBTs in high-side configurations. Its ±250 mA peak output current and 150 V VOFFSET rating meet typical gate drive requirements for automotive IGBTs used in solenoid and pre-charge circuits. Gate resistor selection must ensure safe turn-on/turn-off times per the target IGBT's Qg and Miller plateau characteristics.

How does the AUIRS20161S handle negative VS spikes?

The device is designed to tolerate –8.0 V transients on the VS pin for up to 0.4 µs, as specified in Absolute Maximum Ratings. Its latch-immune HVIC process and internal clamping structures prevent false triggering or damage during inductive kickback events common in solenoid switching. No external TVS is required for typical automotive injector load profiles.

Is a bootstrap capacitor required, and what value is recommended?

Yes - a bootstrap capacitor (typically 1 µF ceramic) is required between VB and VS to supply the high-side driver stage. The datasheet specifies ΔV_BS ≤ 210 mV under 3 µs test conditions with 1 µF capacitance. Larger values (e.g., 2.2 µF) improve stability under high-frequency, high-duty-cycle operation but increase startup time and physical footprint.