Infineon Technologies AUIRS2118STR

Overview

AUIRS2118STR from Infineon Technologies (formerly International Rectifier) is a single-channel high-side gate driver IC designed for bootstrap-based N-channel MOSFET/IGBT control in 600 V systems. It features out-of-phase logic input/output, 10–20 V gate drive supply range, 290 mA source / 600 mA sink peak output current, and automotive-grade AEC-Q100 qualification for harsh environments such as BLDC motor drives.

For engineers reviewing the AUIRS2118STR datasheet, AUIRS2118STR pinout, AUIRS2118STR application, or AUIRS2118STR equivalent, key selection criteria include its 600 V offset capability, dV/dt immunity, undervoltage lockout thresholds (7.2–9.6 V), 140 ns typical propagation delay, and SOIC-8 package with verified floating channel architecture for high-side switching.

Technical Context

The AUIRS2118STR integrates a high-voltage level shifter and latch-immune CMOS logic to enable reliable operation with VS transients up to 600 V and dV/dt tolerance of 50 V/ns. Its internal UVLO monitors both VBS (7.2–9.6 V hysteresis) and VCC (same threshold), ensuring safe gate drive only when supplies are within specification.

The driver uses a Schmitt-triggered input with internal pull-up (AUIRS2118 variant), delivering inverted output relative to IN - critical for direct high-side gate control in half-bridge topologies where complementary drive timing must be preserved externally.

Key Specifications

Pinout & Package

Package: 8-Lead SOIC (SOIC-8N), RoHS-compliant, MSL3, rated for reflow at 260°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side gate driver applications.

Compared with IRS2118PbF and UCC27531DR, the AUIRS2118STR uniquely combines 600 V floating capability, automotive qualification, and inverting logic - making it irreplaceable in AEC-Q100-compliant high-side motor control without topology change.

Availability

AUIRS2118STR is available at Aetrix Electronics and suitable for BLDC motor drives, piezo injector control, industrial AC motor drives, and on-board charger half-bridge circuits requiring stable component supply across automotive and industrial production cycles.

Supply support for AUIRS2118STR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in high-voltage analog and mixed-signal integration.

The AUIRS2118STR belongs to Infineon's automotive-qualified high-side gate driver product line, engineered specifically for robust, high-reliability switching in electrified vehicle powertrains and industrial motor control systems.

FAQ

What is the function of the NC pins (pins 4 and 5) on the AUIRS2118STR?

Pins 4 and 5 are unconnected (NC) and internally unbonded. They must remain unconnected in PCB layout - no routing, grounding, or capacitive coupling. This design prevents parasitic paths that could compromise dV/dt immunity or cause latch-up during high-speed switching transients.

Does the AUIRS2118STR support direct connection to microcontroller GPIO without level shifting?

Yes - its CMOS Schmitt-triggered input with internal pull-up accepts 3.3 V or 5 V logic levels directly. The VIH threshold is ≥9.5 V only for guaranteed "1" recognition, but actual switching occurs near VCC/2 due to hysteresis; thus 3.3 V/5 V MCU outputs reliably drive IN when VCC ≥10 V.

How does the AUIRS2118STR handle negative VS transients during switching?

The device tolerates VS down to −5 V relative to COM, verified per AEC-Q100 test conditions. Its HVIC process and internal clamping structures suppress false triggering during negative-going dV/dt events common in hard-switched IGBT inverters and resonant converters.

Can the AUIRS2118STR drive SiC MOSFETs effectively?

Yes - its 600 mA sink current, 75 ns rise time, and 140 ns propagation delay meet typical SiC gate drive requirements for 10–50 kHz switching. However, external gate resistors must be selected to limit dv/dt per SiC device specs, as the IC itself does not regulate slew rate.