Infineon Technologies BAS116E6327HTSA1

Overview

BAS116E6327HTSA1 from Infineon Technologies is a silicon low-leakage signal diode in SOT23 package, rated for 80 V reverse voltage, 250 mA forward current, and 0.6 µs typical reverse recovery time-designed for precision biasing and low-current switching in automotive sensor interfaces.

For engineers reviewing the BAS116E6327HTSA1 datasheet, BAS116E6327HTSA1 pinout, BAS116E6327HTSA1 application, or BAS116E6327HTSA1 equivalent, key selection criteria include ultra-low IR (5 nA at 75 V, 150 °C), tight VF consistency (900–1250 mV across 1–150 mA), AEC-Q101 qualification, and thermal resistance ≤260 K/W to soldering point.

Technical Context

This discrete diode operates as a unidirectional, single-junction PN device with controlled minority-carrier lifetime to balance low leakage (<5 nA @ 75 V, 150 °C) and medium-speed switching (trr typ. 0.6 µs). Its junction temperature rating of 150 °C and AEC-Q101 qualification confirm suitability for under-hood automotive environments.

The SOT23 package enables surface-mount integration in space-constrained PCB layouts while maintaining thermal performance via low RthJS (≤260 K/W) and defined soldering-point thermal path-critical for reliability in thermally cycling systems like engine control modules and ABS sensors.

Key Specifications

Pinout & Package

SOT23-3 package with gull-wing leads; standardized footprint per Infineon outline drawing EHS BCW66, 1.3 mm lead pitch, 2.9 mm × 1.3 mm body size, and pin 1 marked by beveled corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage signal diode applications.

Compared with MMBD1201LT1G, BAS116E6327HTSA1 delivers 20× lower leakage at elevated temperature and automotive-grade reliability; versus BAS216,215, it trades 20 V VR headroom for tighter trr distribution and proven fit in legacy 80 V designs.

Availability

BAS116E6327HTSA1 is available at Aetrix Electronics and suitable for automotive sensor interfaces, ABS signal conditioning, and body control module power sequencing requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BAS116E6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global R&D and manufacturing infrastructure.

The BAS116 belongs to Infineon's automotive-qualified discrete diode product line, engineered specifically for low-leakage, medium-speed signal routing in harsh-environment electronic control units.

FAQ

Is BAS116E6327HTSA1 suitable for reverse-polarity protection in 12 V automotive systems?

Yes-it supports 80 V reverse voltage with 5 nA leakage at 150 °C, providing 6.7× margin over 12 V nominal and meeting ISO 7637-2 Pulse 1 (−100 V/2 Ω) immunity requirements when combined with appropriate series impedance. Its 370 mW power rating accommodates brief surge events without thermal runaway.

What is the significance of the "HTSA1" suffix in the part number?

The "HTSA1" suffix denotes Infineon's tape-and-reel packaging standard: HT = humidity-safe packaging per J-STD-020, SA1 = 3,000-piece reel on 180 mm diameter carrier tape. It confirms compliance with moisture sensitivity level 1 (MSL-1) and automated SMT placement readiness.

Does BAS116E6327HTSA1 have a specified junction-to-case thermal resistance (RthJC)?

No-Infineon specifies only junction-to-soldering-point thermal resistance (RthJS ≤ 260 K/W) in the datasheet. RthJC is not published because the SOT23 package lacks a dedicated thermal pad; thermal path design must rely on PCB copper area and solder joint conduction to the board plane.

Can BAS116E6327HTSA1 replace BAS21 in existing designs?

Only with validation: BAS21 has 250 V VR and 50 ns trr but higher IR (100 nA @ 25 °C). BAS116 offers lower leakage and AEC-Q101 qualification but reduced VR and slower trr. Substitution requires verifying that 80 V VR and 0.6 µs trr meet system transient and timing margins.