Infineon Technologies BAS116E6433HTMA1

Overview

BAS116E6433HTMA1 from Infineon Technologies is a silicon low-leakage signal diode in SOT23 package, rated for 80 V reverse voltage, 250 mA forward current, and 0.6 µs typical reverse recovery time-designed for precision biasing and low-current switching in automotive sensor interfaces.

For engineers reviewing the BAS116E6433HTMA1 datasheet, BAS116E6433HTMA1 pinout, BAS116E6433HTMA1 application, or BAS116E6433HTMA1 equivalent, key selection criteria include leakage performance at 150°C (≤80 nA), VF consistency across 1–150 mA, and AEC-Q101 qualification for under-hood electronics.

Technical Context

This discrete diode operates as a unidirectional DC blocking and clamping element with low junction capacitance (2 pF) and fast recovery (0.6–1.5 µs), enabling use in high-impedance analog front-ends where leakage-induced offset must be minimized.

Its thermal resistance (R_thJS ≤ 260 K/W) and 150°C maximum junction temperature support operation in thermally constrained automotive modules, while the SOT23 footprint ensures compatibility with standard pick-and-place assembly processes.

Key Specifications

Pinout & Package

SOT23-3 package with gull-wing leads; standardized 2.9 mm × 1.3 mm footprint and 1.15 mm height; pin 1 marked by dot or chamfered corner.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-leakage signal diode applications.

Compared with NSS12500WT1G and ES1J, BAS116E6433HTMA1 uniquely balances ultra-low leakage (<5 nA @ 25°C), fast recovery (0.6 µs), and AEC-Q101 compliance in SOT23-making it optimal for thermally sensitive, high-accuracy automotive analog signal conditioning.

Availability

BAS116E6433HTMA1 is available at Aetrix Electronics and suitable for automotive sensor interfaces, precision reference clamping, and low-power logic level shifting requiring stable component supply across production lifecycles.

Supply support for BAS116E6433HTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The BAS116 series belongs to Infineon's AEC-Q101-qualified discrete diode product line, engineered specifically for reliability-critical automotive signal conditioning and biasing functions.

FAQ

Is BAS116E6433HTMA1 suitable for 150°C under-hood applications?

Yes. It is rated for T_j = 150°C and exhibits ≤80 nA reverse leakage at 75 V and 150°C, validated per AEC-Q101 stress testing. Its R_thJS ≤ 260 K/W enables thermal design margins in ECU modules with board temperatures up to 85°C.

What is the marking code on the SOT23 package?

The top-side marking is "JVs", consistent with Infineon's SOT23 diode coding convention. This matches the device type BAS116 and distinguishes it from variants like BAS16 or BAS21 in the same package family.

Does BAS116E6433HTMA1 have a connected third pin?

No. Pin 3 is an internal die paddle with no electrical connection. It serves only mechanical anchoring and thermal conduction. Circuit design must treat it as floating or optionally tied to cathode for enhanced thermal transfer-never used as a signal terminal.

How does its reverse recovery time compare to standard 1N4148 diodes?

BAS116E6433HTMA1 has t_rr = 0.6 µs typical (1.5 µs max), versus 4–6 ns for modern 1N4148 variants. It trades ultra-fast switching for ultra-low leakage-making it unsuitable for >10 MHz digital clamping but ideal for <5 MHz analog biasing where leakage dominates error budgets.