Infineon Technologies BAS 16-02W E6327

Overview

BAS 16-02W E6327 from Infineon Technologies is a silicon high-speed switching diode in SCD80 (SOD-323) package, rated for 80 V reverse voltage, 200 mA forward current, and 4 ns reverse recovery time; used in signal routing, level shifting, and clamp protection circuits in automotive body control modules and industrial PLC I/O stages.

For engineers reviewing the BAS 16-02W E6327 datasheet, BAS 16-02W E6327 pinout, BAS 16-02W E6327 application, or BAS 16-02W E6327 equivalent, key selection criteria include reverse recovery time, thermal resistance at 120 °C junction limit, low capacitance under zero bias, and AEC-Q101 qualification for automotive-grade reliability.

Technical Context

This diode operates as a unidirectional, single-anode–cathode switching element with fast turn-off behavior enabled by low minority-carrier lifetime design. Its 2 pF junction capacitance at 0 V and 4 ns trr support >100 MHz signal path switching in digital interface protection and sample-and-hold front ends.

Thermal performance is defined by RthJS ≤ 120 K/W with TS ≤ 120 °C, enabling stable operation in compact PCB layouts without forced airflow. The device meets AEC-Q101 stress testing for temperature cycling, HTRB, and ESD (HBM ≥ 8 kV), confirming suitability for under-hood automotive environments.

Key Specifications

Pinout & Package

Package: SCD80 (SOD-323), 2-terminal surface-mount plastic package with gull-wing leads, 1.7 mm × 1.25 mm footprint, 0.9 mm height, and tape-and-reel packaging (E6327 = reel of 3,000 units).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed switching diode applications.

Compared with 1N4148W-7-F and BAS116-02W, the BAS 16-02W E6327 uniquely balances AEC-Q101 compliance, 120 K/W thermal resistance, and 4 ns trr in SOD-323-making it optimal for space-constrained, thermally demanding automotive signal paths where reliability and speed are co-critical.

Availability

BAS 16-02W E6327 is available at Aetrix Electronics and suitable for automotive body control units, industrial PLC digital input modules, USB port ESD protection layers, and RF detector front-ends requiring stable component supply across multi-year production cycles.

Supply support for BAS 16-02W E6327 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and high-reliability discrete components.

The BAS16 family targets high-speed signal integrity applications in automotive and industrial systems, with variants optimized for thermal performance, package size, and qualification level.

FAQ

What is the maximum allowable junction temperature for BAS 16-02W E6327?

The absolute maximum junction temperature is 150 °C, but the device is rated for continuous operation with case temperature ≤120 °C to maintain 200 mA forward current capability and long-term reliability under AEC-Q101 conditions.

Is BAS 16-02W E6327 pin-compatible with BAS116-02W?

Yes - both devices use the SCD80 (SOD-323) package with identical anode/cathode terminal layout and marking orientation, allowing direct PCB footprint reuse without layout changes.

Does BAS 16-02W E6327 require derating above 25 °C ambient?

Yes - forward current must be linearly derated above 25 °C ambient; at 85 °C ambient, maximum IF drops to ~140 mA based on the published IF vs. TS curve for the -02W variant.

Can BAS 16-02W E6327 replace 1N4148 in high-frequency circuits?

Yes - with its 4 ns trr and 2 pF CT, it outperforms standard 1N4148 (trr ≈ 4–6 ns, CT ≈ 2–4 pF) in >50 MHz applications, especially where thermal constraints or automotive qualification are required.