Infineon Technologies BAS3005S02LRHE6327XTSA1

Overview

BAS3005S02LRHE6327XTSA1 from Infineon is a low-forward-voltage Schottky diode in TSLP-2-17 package, rated for 30 V reverse voltage and 0.5 A continuous forward current, with VF = 450 mV at IF = 500 mA and CT = 10–15 pF at VR = 5 V, f = 1 MHz, optimized for mobile phone battery charger circuits.

For engineers reviewing the BAS3005S02LRHE6327XTSA1 datasheet, BAS3005S02LRHE6327XTSA1 pinout, BAS3005S02LRHE6327XTSA1 application, or BAS3005S02LRHE6327XTSA1 equivalent, key selection criteria include ultra-low VF at high IF, minimal footprint (1.0 × 0.6 mm), thermal resistance ≤60 K/W, and RoHS-compliant Pb-free construction.

Technical Context

This Schottky diode uses a planar silicon process with metal–semiconductor junction to achieve low conduction loss and fast switching. Its TSLP-2-17 package features a single anode–cathode configuration with cathode marking on top view and solderable terminals spaced 0.65 mm apart.

Thermal performance is defined by RthJS ≤ 60 K/W and derated VR/IF above TA = 25 °C; maximum junction temperature is 150 °C, with storage range from –65 °C to +150 °C and operating range from –55 °C to +150 °C.

Key Specifications

Pinout & Package

TSLP-2-17 is a surface-mount, two-terminal leadless package with exposed thermal pad, 0.65 mm pitch, and cathode marked on top surface. Terminal 1 is anode; Terminal 2 is cathode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with RB521S-30T2R and NSR0530HT1G, BAS3005S02LRHE6327XTSA1 uniquely delivers 0.5 A current handling in the smallest footprint (1.0 × 0.6 mm) while maintaining 450 mV VF and 30 V VR-enabling higher-density, thermally robust mobile power designs.

Availability

BAS3005S02LRHE6327XTSA1 is available at Aetrix Electronics and suitable for smartphone battery chargers, USB-C power delivery modules, wireless charging receivers, and portable medical device power paths requiring stable component supply across production lifecycles.

Supply support for BAS3005S02LRHE6327XTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The BAS3005S series belongs to Infineon's low-VF Schottky diode product line, engineered specifically for space- and efficiency-critical mobile power conversion applications including USB charging and wireless power reception.

FAQ

What is the maximum allowable junction temperature for BAS3005S02LRHE6327XTSA1?

The absolute maximum junction temperature (Tj) is 150 °C, as specified in the Infineon datasheet. Operation beyond this limit risks permanent degradation of the Schottky barrier and increased reverse leakage. Thermal design must ensure RthJS ≤ 60 K/W and account for ambient temperature derating above 25 °C.

Is BAS3005S02LRHE6327XTSA1 suitable for reverse polarity protection?

Yes-it is commonly used for reverse polarity protection in 5–20 V input rails due to its 30 V VR rating and low VF. However, it must be placed upstream of sensitive ICs and paired with appropriate fusing, as it does not provide overvoltage or surge protection beyond its rated VR and IFSM = 2 A.

Does BAS3005S02LRHE6327XTSA1 have a built-in ESD protection structure?

No-this Schottky diode lacks integrated ESD protection. It is rated for standard HBM ESD per JEDEC JESD22-A114 (±2 kV typical), but external TVS diodes are required for IEC 61000-4-2 level 4 (±8 kV contact) compliance in USB or external port applications.

Can BAS3005S02LRHE6327XTSA1 replace a standard PN diode in a 5 V buck converter output stage?

Yes-its 450 mV VF at 500 mA reduces conduction loss by ~65% versus a typical 1N5819 (VF ≈ 1.2 V). Ensure layout accommodates its TSLP-2-17 footprint and verify thermal relief via copper pour, as Schottky diodes exhibit higher IR at elevated temperatures than PN types.