Infineon Technologies BAS 40 B5003

Overview

BAS40 B5003 from Nexperia is a silicon Schottky diode optimized for high-speed switching, voltage clamping, and RF signal mixing in compact consumer and industrial electronics. It features 40 V reverse voltage rating, 120 mA forward current, 3–5 pF junction capacitance at 0 V, 10 Ω differential forward resistance at 10 kHz, and operates across –55 °C to +150 °C. Used in ESD-sensitive signal path protection circuits.

For engineers reviewing the BAS40 B5003 datasheet, BAS40 B5003 pinout, BAS40 B5003 application, or BAS40 B5003 equivalent, key selection criteria include low forward voltage (310–380 mV at 10 mA), fast recovery time (<100 ps), thermal resistance (≤275 K/W for SOT23 package), and AEC-Q101 qualification status for automotive-grade reliability.

Technical Context

This Schottky diode leverages a planar epitaxial structure with platinum-silicide barrier formation to achieve low VF and ultrafast switching. Its low junction capacitance (typ. 3 pF) and minimal charge carrier lifetime (<100 ps) enable operation up to UHF frequencies in detector and mixer stages.

The device is configured as a single anode–cathode element in SOT23 package, with thermal design governed by junction-to-soldering-point resistance (RthJS ≤ 275 K/W). Reverse leakage remains ≤1 µA at 30 V, supporting stable clamping in low-power logic interfaces.

Key Specifications

Pinout & Package

Package: SOT23 - Surface-mount plastic package with gull-wing leads, footprint compatible with JEDEC TO-236AB standard, suitable for reflow soldering and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky diode applications.

Compared with BAS40 B5003, NSR0230HT1G trades reverse voltage headroom for lower VF, while SD103ATW-7-F sacrifices leakage performance and thermal capability for broader commercial availability and lower unit cost.

Availability

BAS40 B5003 is available at Aetrix Electronics and suitable for high-speed signal detection, logic-level clamping, RF mixer front-ends, and low-power voltage reference circuits requiring stable component supply and automotive-grade reliability.

Supply support for BAS40 B5003 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified components and advanced packaging.

BAS40 B5003 belongs to Nexperia's Schottky Diode portfolio designed specifically for high-frequency signal conditioning, ESD protection, and low-loss power management in space-constrained electronics.

FAQ

Is BAS40 B5003 AEC-Q101 qualified?

Yes, BAS40 B5003 is qualified to AEC-Q101 Rev D for stress testing including HTGB, HTRB, and TCT. This qualification applies to the SOT23 variant and confirms suitability for automotive powertrain and body electronics where reliability under thermal cycling and humidity is critical.

What is the maximum junction temperature and how does it affect derating?

The absolute maximum junction temperature is 150 °C. Derating begins at case temperatures above 81 °C for the SOT23 package, where total power dissipation drops linearly from 250 mW to zero at 150 °C. Thermal resistance RthJS is ≤275 K/W, so sustained 120 mA operation requires careful PCB copper area design.

Can BAS40 B5003 replace BAT54 in existing designs?

Yes, with verification: both are SOT23 Schottky diodes, but BAS40 B5003 has higher VR (40 V vs. 30 V), slightly higher VF (310–380 mV vs. 240–320 mV), and tighter CT tolerance (3–5 pF vs. 4–10 pF). Layout and thermal validation are recommended due to differences in RthJS and surge current capability.

Does BAS40 B5003 require special handling for ESD sensitivity?

Yes - it is classified as an ESD-sensitive device (HBM ≥2 kV). Handling requires grounded workstations, anti-static mats, wrist straps, and conductive foam storage. PCB layout should minimize trace inductance on anode/cathode paths to avoid triggering parasitic oscillation during fast transients.