Vishay Semiconductor Opto Division BPW96

Overview

BPW96 from Vishay Semiconductors is a silicon NPN phototransistor in a T-1¾ (Ø5 mm) clear plastic package, optimized for visible and near-infrared detection with peak sensitivity at 850 nm, 20° half-angle radiation acceptance, and fast switching (ton = 2.0 µs, toff = 2.3 µs). It delivers 2.5–7.5 mA collector light current (BPW96B) or 4.5–15 mA (BPW96C) under 1 mW/cm² irradiance at 950 nm, supporting reliable opto-isolation and presence sensing in industrial control interfaces.

For engineers reviewing the BPW96 datasheet, BPW96 pinout, BPW96 application, or BPW96 equivalent, key selection criteria include radiant sensitivity range (450–1080 nm), collector-emitter breakdown voltage (70 V), dark current (<200 nA), thermal resistance (350 K/W), and compliance with RoHS and WEEE directives - all critical for ambient-stable optical detection in embedded sensing systems.

Technical Context

The BPW96 operates as a two-terminal photosensitive switch: incident photons generate base current in the NPN structure, enabling proportional collector current flow without external biasing of the base terminal. Its spectral response spans 450–1080 nm, peaking at 850 nm, making it compatible with common IR LEDs and visible-light emitters.

Designed for ambient-temperature operation from –40 °C to +100 °C, the device uses a leaded T-1¾ package with stand-off leads to minimize thermal stress and parasitic capacitance (CCEO = 3 pF), supporting high-speed detection up to 180 kHz cutoff frequency under standard load conditions (RL = 100 Ω).

Key Specifications

Pinout & Package

Package: T-1¾ (Ø5 mm) clear plastic with axial leads and stand-off geometry; lead pitch 2.54 mm; total length 12.3 mm; lens radius 2.45 mm per Vishay drawing 6.544-5086.01-4.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar phototransistor applications.

Compared with TEPT5600 and QSE113, the BPW96 offers superior angular selectivity (±20° vs ±35°), higher voltage tolerance (70 V vs 30 V), and faster switching - making it optimal for precision industrial sensing where ambient light rejection and timing fidelity are critical.

Availability

BPW96 is available at Aetrix Electronics and suitable for industrial automation, motor feedback systems, optical safety curtains, and smoke detection equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for BPW96 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Intertechnology is a global manufacturer of discrete semiconductors and passive components, specializing in high-reliability optoelectronics, power MOSFETs, and precision resistors.

The BPW96 belongs to Vishay's silicon phototransistor product line, engineered for robust ambient-light rejection, wide spectral coverage, and stable performance in harsh industrial and safety-critical optical sensing applications.

FAQ

What is the maximum collector-emitter voltage rating for BPW96?

The BPW96 has a collector-emitter breakdown voltage V(BR)CEO of 70 V at IC = 1 mA, verified per Vishay Document 81532. This rating allows safe operation in 24 V and 48 V industrial control systems with transient margin. Exceeding this voltage risks irreversible junction breakdown. The BPW96 must be used within its absolute maximum ratings - including VCEO ≤ 70 V - to ensure long-term reliability in designs using the BPW96.

How does BPW96B differ from BPW96C in practical circuit design?

The BPW96B delivers 2.5–7.5 mA collector light current under 1 mW/cm² irradiance, while BPW96C provides 4.5–15 mA - a ~2× higher typical output. In practice, BPW96C reduces or eliminates the need for post-amplification in low-light or long-distance optical paths, whereas BPW96B suits well-lit, short-gap applications where signal-to-noise ratio is already sufficient. Both share identical package, spectral response, and timing characteristics, so the BPW96B and BPW96C are drop-in replacements except for sensitivity scaling.

Is BPW96 suitable for use with 950 nm infrared LEDs?

Yes - the BPW96 exhibits strong radiant sensitivity at 950 nm, with documented Ica performance measured specifically at that wavelength (Ee = 1 mW/cm², λ = 950 nm). Its spectral bandwidth (450–1080 nm) fully covers 950 nm, and peak sensitivity at 850 nm ensures high responsivity nearby. Circuit designs using the BPW96 with 950 nm emitters achieve reliable signal margins, especially when combined with the BPW96's low dark current (<200 nA) and fast response.

What is the thermal resistance junction-to-ambient for BPW96, and how does it affect PCB layout?

The BPW96 has a thermal resistance RthJA of 350 K/W when mounted with Cu wire (0.14 mm² cross-section), per Vishay Document 81532. This relatively high value means even modest power dissipation (e.g., 50 mW at VCE = 5 V, IC = 10 mA) can raise junction temperature significantly above ambient. To maintain Tj ≤ 100 °C, limit average power and avoid dense copper pours or enclosed enclosures without airflow. PCB layout for the BPW96 should prioritize thermal isolation and ambient exposure - consistent with the thermal design guidance for the BPW96.

Does BPW96 require a base connection for operation?

No - the BPW96 is a two-terminal NPN phototransistor with internally unconnected base; it operates solely via photogenerated base current. No external bias, resistor, or capacitor is needed on the base terminal. The device functions as a current-output photosensor between collector and emitter, simplifying circuit design and reducing component count. This baseless configuration is intrinsic to the BPW96's architecture and confirmed across all Vishay documentation for the BPW96.