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Qorvo CMD325

Part No.:
CMD325
Manufacturer:
Qorvo
Category:
Attenuators
Package:
Die
Datasheet:
AetrixCMD325.pdf
Description:
DC-30 GHZ 6-BIT DIGITAL ATTENUAT
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,027

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Product details

Overview

The CMD325 from Qorvo is a GaAs MMIC 6-bit digital attenuator die operating from DC to 30 GHz, with negative voltage control (0 V / −5 V), 31.5 dB total attenuation (0.5–16 dB bit steps), 4 dB insertion loss at 12 GHz, and 50 Ω RF port matching for direct integration into microwave front-ends used in test instrumentation and phased array radar.

For engineers reviewing the CMD325 datasheet, pinout, applications, or equivalent options, this page delivers verified electrical specs, die-level package details, truth-table–driven control logic, thermal and ESD handling guidance, and validated alternatives for high-frequency RF system design.

Technical Context

The CMD325 implements a monolithic GaAs-based switched-resistor attenuator architecture with six independent bit-control lines (P0–P5) and a common −5 V bias (Vee). Each bit activates a dedicated attenuation path with defined step values (0.5, 1, 2, 4, 8, 16 dB), enabling precise, digitally programmable loss states across DC–30 GHz without external matching networks.

It operates under negative control logic: low (0 ±0.3 V) enables a bit, high (−5 ±0.3 V) disables it. The die features full passivation, gold bond pads, and a grounded backside for RF/DC return-requiring conductive epoxy die attach and thermosonic wedge bonding per assembly guidelines.

Key Specifications

Parameter Value and Actual Design Meaning
Frequency Range DC to 30 GHz - supports broadband RF signal conditioning in microwave test sets and EW systems without band switching.
Attenuation Range 31.5 dB total (0.5–16 dB bits) - enables fine-grained RF power leveling across 63 discrete states via parallel digital control.
Insertion Loss 4 dB at 12 GHz (typ.) - minimizes signal degradation in receive-chain gain blocks and transmitter output stages.
Input P1dB 26 dBm (typ.) - sustains linear operation under moderate-power RF drive in active antenna modules and repeaters.
Switching Speed 25 ns - supports fast AGC loops and time-domain waveform shaping in pulsed radar and 5G FR2 beamforming.
Control Interface Negative logic (0 V / −5 V) - simplifies interface to standard GaAs-compatible level shifters and FPGA I/O banks.
Thermal Resistance θJC = 131 °C/W - requires careful thermal management in high-duty-cycle applications due to limited heat dissipation area.

Pinout & Package

Package: Bare die, 2300 µm × 1000 µm × 100 µm, fully passivated, gold metallization, grounded backside. Requires conductive epoxy die attach and thermosonic wedge bonding (0.8 mil wire).

Pin/Terminal Circuit Role Design Meaning
1, 9 RF1, RF2 DC-coupled 50 Ω RF ports - require external blocking capacitors if DC bias differs from 0 V; shortest possible bond wires essential for <30 GHz performance.
8 Vee −5 V negative bias supply - mandatory for operation; must be applied before control signals to prevent damage.
2–7 P0–P5 Bit control inputs (LSB to MSB) - low (0 V) enables corresponding attenuation step; high (−5 V) disables it per truth table.
Backside Ground RF and DC ground reference - must be electrically connected to system ground plane via conductive die attach.

Key Features

Feature Design Value
50 Ω matched RF ports Eliminates need for external impedance-matching networks, reducing PCB area and parasitic sensitivity in mmWave layouts.
Ultra-wideband DC–30 GHz operation Enables single-component replacement across multiple frequency bands in multi-band test equipment and satellite comms transceivers.
25 ns switching speed Supports real-time RF power control in adaptive beamforming and fast-hopping frequency synthesizers.
Full passivation + gold metallization Ensures reliability in humid or harsh environments (e.g., airborne radar enclosures) and compatibility with standard RF packaging processes.
Class 1A ESD rating (HBM) Requires strict ESD handling during assembly but allows integration into automated high-volume RF module production lines.

Applications

Phased Array Radar T/R Modules 5G mmWave Base Station Test Sets

Use Scenario: Precise RF power leveling across hundreds of antenna elements in active electronically scanned arrays (AESA).

IC Role / Device Role / Timing Role: Digitally controlled analog attenuator providing per-element gain calibration and dynamic range compression.

Use Value: Enables 0.2 dB typical step accuracy and 31.5 dB range to maintain beam pattern integrity while compensating for component tolerances and temperature drift.

Use Scenario: Signal conditioning in production test systems verifying 24–29.5 GHz 5G NR FR2 transceiver ICs.

IC Role / Device Role / Timing Role: Wideband RF attenuator in automated test equipment (ATE) signal paths for calibrated power sweep and receiver sensitivity testing.

Use Value: Delivers stable 4 dB insertion loss and <0.5 dB attenuation error up to 30 GHz, ensuring traceable measurement uncertainty in production test.

Satellite Communication Uplink Transmitters Electronic Warfare (EW) Jammer Front-Ends

Use Scenario: Output power control in Ka-band satellite uplink amplifiers where spectral purity and linearity are critical.

IC Role / Device Role / Timing Role: High-linearity attenuator placed between driver and power amplifier to manage gain staging and prevent saturation.

Use Value: 26 dBm P1dB and 40 dBm IP3 support clean signal transmission under high CW and modulated load conditions.

Use Scenario: Rapidly reconfigurable RF attenuation in wideband jammer exciters covering S-, C-, X-, and Ku-bands.

IC Role / Device Role / Timing Role: Fast-switching digital attenuator enabling millisecond-level power profile changes during threat response sequences.

Use Value: 25 ns switching speed and DC–30 GHz bandwidth allow seamless coverage of multiple threat radar bands without hardware reconfiguration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar wideband digital attenuator applications.

Alternative Part Technical Difference Application Difference Selection Advice
HMC650LP3E SiGe process; 0.1–31 GHz range; +5 V positive control; 5.5 dB insertion loss at 20 GHz Better suited for lower-cost, lower-frequency (<20 GHz) industrial radios where positive logic simplifies controller interface Select when system uses +3.3/+5 V logic families and operates below 20 GHz; CMD325 preferred for >25 GHz or ultra-low-loss paths
QPA9807 Integrated GaAs MMIC with built-in driver amp; 24–34 GHz; fixed 10 dB attenuation; no digital control Used in fixed-gain, high-output-power mmWave links where attenuation is set once during calibration Choose when combined amplification + attenuation is needed in compact form factor; CMD325 required for programmable, multi-step loss control

Compared with HMC650LP3E and QPA9807, the CMD325 uniquely offers true DC–30 GHz coverage, negative-voltage control optimized for GaAs bias schemes, and 0.2 dB typical step accuracy-making it the only option for precision, wideband, digitally reconfigurable RF power management in defense and aerospace systems.

Availability

CMD325 is available at Aetrix Electronics and suitable for phased array radar, 5G mmWave test instrumentation, satellite communications uplinks, and electronic warfare systems requiring stable component supply, consistent wafer-lot traceability, and long-term obsolescence mitigation.

Supply support for CMD325 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Qorvo is a U.S.-based semiconductor company specializing in RF solutions for defense, aerospace, and high-performance wireless infrastructure, with leadership in GaAs, GaN, and BAW technologies.

The CMD325 belongs to Qorvo's high-frequency MMIC attenuator product line, engineered specifically for DC–30 GHz programmable RF power control in mission-critical radar, EW, and satellite communication systems.

FAQ

What is the recommended bias sequence for powering up the CMD325?

Apply Vee (−5 V) to pad 8 before applying any control voltages to P0–P5. This prevents latch-up or damage during startup. The CMD325 will not function unless Vee is present and stable. Control signals (0 V or −5 V) may then be asserted in any order. Always observe ESD precautions-CMD325 is Class 1A HBM sensitive. The CMD325 datasheet specifies absolute maximum ratings including −8 V for Vee and Vctl.

Does the CMD325 require external matching components at its RF ports?

No. The CMD325 is a 50 Ω matched design-its RF1 and RF2 ports are internally matched to 50 Ω across DC–30 GHz, eliminating the need for external baluns, transformers, or stubs. However, DC blocking capacitors are required on both RF ports if the connected circuitry imposes non-zero DC potential. The CMD325's matched architecture reduces layout complexity and improves repeatability in high-frequency assemblies.

What is the meaning of "step error" for the CMD325, and what is its typical value?

Step error is the deviation between the actual attenuation achieved and the ideal sum of enabled bit values (e.g., P0+P1 = 1.5 dB ideal; measured may be 1.52 dB). For the CMD325, typical step error is 0.2 dB across major states (0.5–31.5 dB), with worst-case ±0.6 dB over full frequency and temperature range. This metric directly impacts calibration accuracy in automatic test equipment and phased array beamforming. The CMD325 datasheet reports step error in Section "Electrical Specifications".

Can the CMD325 be operated with positive control voltages instead of negative ones?

No. The CMD325 uses negative control logic: 0 V enables a bit, −5 V disables it. Applying positive voltages (e.g., +3.3 V or +5 V) to P0–P5 exceeds the absolute maximum rating of −8 V for control pins and risks permanent damage. Level-shifting circuitry must convert positive logic outputs to 0 V / −5 V before interfacing with the CMD325. The CMD325 truth table and recommended operating conditions explicitly define this negative-voltage requirement.

What thermal considerations apply when mounting the CMD325 in a high-power application?

The CMD325 has a junction-to-case thermal resistance (θJC) of 131 °C/W. With a max input P1dB of 26 dBm (≈400 mW), even modest RF power levels can raise junction temperature significantly if heatsinking is inadequate. Use electrically conductive, thermally optimized epoxy for die attach, ensure low-thermal-resistance path to the host substrate, and avoid eutectic bonding. The CMD325 operating temperature range is −55 °C to +85 °C, and thermal derating is required above 25 °C ambient.

CMD325 Specifications

Product attributes
Attribute value
Manufacturer:
Qorvo
Package/Case:
Die
Series:
-
Packaging:
Tray
Product Status:
Active
Attenuation Value:
31.5dB
Frequency Range:
0 Hz ~ 30 GHz
Power (Watts):
-
Impedance:
50 Ohms
Grade:
-
Qualification:
-

CMD325 FAQ

1.How can I place an order for CMD325 through Aetrix?

Please submit a Request for Quotation (RFQ) for CMD325 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CMD325 reliable?

The price and inventory of CMD325 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CMD325 is usually 5 days.

3.What payment methods are accepted for CMD325?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CMD325 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CMD325?

CMD325 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CMD325 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CMD325?

For technical support, including CMD325 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CMD325 requirements.

6.How does Aetrix verify that CMD325 is sourced from the original manufacturer or authorized distributors?

All CMD325 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CMD325 meets industry standards.

7.What is the process for return or replacement of CMD325?

All CMD325 units undergo pre-shipment inspection (PSI). If there is an issue with CMD325, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CMD325 part is unused and in its original packaging.

Return procedure for CMD325:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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