Cypress Semiconductor Corp CY62126DV30L-55BVXE

Overview

CY62126DV30L-55BVXE from Cypress Semiconductor is a 1-Mbit (64K × 16) low-power CMOS static RAM with 55 ns access time, 2.2–3.6 V supply range, and industrial temperature rating (−40°C to +85°C). It features automatic CE power-down, ultra-low active current (0.85 mA @ 1 MHz), and high-impedance I/O control via CE/OE/BHE/ BLE for byte-selectable read/write in portable memory subsystems.

For engineers reviewing the CY62126DV30L-55BVXE datasheet, CY62126DV30L-55BVXE pinout, CY62126DV30L-55BVXE application, or CY62126DV30L-55BVXE equivalent, key selection criteria include standby current (≤4 µA), TSOP II / VFBGA package compatibility, byte-enable timing (tDBE = 25 ns), and MoBL®-optimized power sequencing for battery-constrained systems.

Technical Context

The device implements a full CMOS 64K × 16 SRAM array with independent byte-high (BHE) and byte-low (BLE) enables, enabling partial-word writes without bus contention. Address decoding uses hierarchical row/column architecture with A0–A15 inputs and supports asynchronous read/write cycles with no internal clocks or refresh requirements.

Power management relies on dual-tier deselection: CE HIGH triggers automatic 90% active current reduction, while sustained CE HIGH + stable address bus enters >99% power-down mode (ISB2 ≤ 4 µA). All I/O pins enter high-impedance state during CE HIGH, OE HIGH, BHE/ BLE HIGH, or write cycles-ensuring clean bus isolation in multi-device systems.

Key Specifications

Pinout & Package

Available in 44-pin TSOP Type II (JEDEC MO-141AC) and 48-ball VFBGA packages. This variant (CY62126DV30L-55BVXE) uses the TSOP II footprint with 0.8 mm lead pitch and 12.0 × 20.0 mm body size.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV51216BLL-55NLI and NVTFS16256L15T, CY62126DV30L-55BVXE delivers the lowest standby current in its class and native byte-enable flexibility-making it optimal for energy-constrained, mixed-width embedded systems where deterministic low-power operation is non-negotiable.

Availability

CY62126DV30L-55BVXE is available at Aetrix Electronics and suitable for wireless sensor nodes, industrial HMIs, automotive telematics loggers, and medical infusion pump data caches requiring stable component supply and long-term industrial temperature support.

Supply support for CY62126DV30L-55BVXE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability memory and programmable solutions for automotive, industrial, and consumer electronics with focus on low-power innovation.

This device belongs to the MoBL® (More Battery Life) SRAM product line, engineered specifically for portable and energy-harvested systems demanding sub-µA standby and seamless integration with 1.8–3.3 V microcontrollers.

FAQ

What is the maximum clock frequency supported for synchronous interface?

CY62126DV30L-55BVXE is an asynchronous SRAM and does not use a clock signal. Its 55 ns access time defines the maximum toggle rate of address/control lines-equivalent to ~18 MHz for continuous random access. System timing must comply with tRC (55 ns), tAA (55 ns), and tDOE (25 ns) parameters per the datasheet truth table.

Can this SRAM retain data during complete power removal?

No. CY62126DV30L-55BVXE is volatile memory and requires continuous VCC ≥ 1.5 V for data retention. For zero-power retention, an external backup source (e.g., supercapacitor or coin cell) must maintain VCC above VDR (1.5 V) during main power loss-verified by tCDR = 0 ns and ICCDR ≤ 3 µA in data retention mode.

Is the 44-pin TSOP II package compatible with standard reflow profiles?

Yes. The TSOP II package complies with IPC/JEDEC J-STD-020D moisture sensitivity level (MSL) 3 and supports peak reflow temperatures up to 260°C for ≤ 30 seconds. Recommended ramp rates are 3°C/s max (liquidus to peak) and cooling rate ≤ 6°C/s to prevent delamination or solder voiding.

How does automatic power-down behave when address lines float?

Automatic power-down (ISB1/ISB2) activates only when CE is HIGH *and* all address inputs (A0–A15) remain static for >100 µs. Floating addresses violate this condition and prevent entry into deep standby-designs must tie unused address lines or use pull-ups/downs to ensure stable logic levels during idle periods.