Cypress Semiconductor Corp CY62168DV30LL-55BVI

Overview

CY62168DV30LL-55BVI from Cypress Semiconductor is a 16-Mbit (2 M × 8) CMOS static RAM with 55 ns access time, operating across 2.2 V–3.6 V supply, delivering 15 mA typical active current at f_Max and 2.5 µA typical standby current (ISB2). It features dual chip enables (CE1/CE2), automatic power-down on deselect, and high-impedance I/O control for bus sharing in portable memory subsystems.

For engineers reviewing the CY62168DV30LL-55BVI datasheet, CY62168DV30LL-55BVI pinout, CY62168DV30LL-55BVI application, or CY62168DV30LL-55BVI equivalent, key selection criteria include ultra-low ISB2 (2.5 µA typ), VFBGA-48 package compatibility, CE1/CE2 logic polarity for hierarchical memory enable, and guaranteed 55 ns tRC over industrial temperature (–40 °C to +85 °C).

Technical Context

This SRAM implements a 2048K × 8 asynchronous architecture with complementary metal oxide semiconductor (CMOS) process optimization for speed/power trade-off. Its dual CE interface (CE1 active-low, CE2 active-high) enables cascaded bank selection without external logic, while OE and WE control read/write direction and output state independently.

The device supports three power states: active (ICC = 15 mA max at 55 ns), automatic CE power-down (ISB1/ISB2 = 22 µA max), and data retention (ICCDR ≤ 10 µA at VDR ≥ 1.5 V). Address-to-data valid timing (tAA ≤ 55 ns) and OE-controlled output enable (tDOE ≤ 25 ns) ensure deterministic timing in microcontroller-attached memory systems.

Key Specifications

Pinout & Package

Package: 48-ball Very Fine Ball Grid Array (VFBGA), 6 mm × 8 mm body, 0.5 mm ball pitch, JEDEC MO-244AC compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with IS62WV20488BLL-55NLI and R1LV20488ASB-55PB, CY62168DV30LL-55BVI offers the lowest guaranteed ISB2 (22 µA max) and unique dual CE logic-enabling simpler, lower-component-count memory expansion in portable and industrial systems requiring hierarchical enable control.

Availability

CY62168DV30LL-55BVI is available at Aetrix Electronics and suitable for mobile handset memory, industrial PLC data buffers, medical wearable sensor hubs, and automotive infotainment UI caches requiring stable component supply across extended product lifecycles.

Supply support for CY62168DV30LL-55BVI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance, low-power memory and microcontroller solutions for embedded systems, with headquarters in San Jose, CA.

The MoBL® (More Battery Life) SRAM product line targets portable and battery-operated applications requiring ultra-low standby current, fast access, and robust data retention-optimized for cellular, medical, and industrial edge devices.

FAQ

What is the minimum VCC required to retain data in CY62168DV30LL-55BVI?

The device guarantees data retention down to VDR = 1.5 V, with ICCDR ≤ 10 µA at that voltage. This allows integration with supercapacitor or coin-cell backup circuits that decay below 2.2 V nominal supply. Retention is specified across –40 °C to +85 °C ambient, and no refresh cycles are required during retention mode.

How does the dual CE interface (CE1 and CE2) function in practice?

CE1 is active-low and CE2 is active-high; both must be asserted simultaneously (CE1 = LOW, CE2 = HIGH) for normal read/write operation. If CE1 goes HIGH or CE2 goes LOW, the device enters automatic power-down mode, reducing ICC to ISB2 levels. This enables hierarchical memory banking-e.g., CE2 can be driven by upper address bits while CE1 serves as local chip select.

Can CY62168DV30LL-55BVI operate reliably at 2.2 V across the full industrial temperature range?

Yes. The device is fully characterized for AC and DC parameters at VCC = 2.2 V, TA = –40 °C to +85 °C. tRC remains ≤ 55 ns, ISB2 ≤ 22 µA, and VIH/VIL thresholds maintain proper noise margins. No derating or speed penalty applies at minimum VCC-unlike many competing SRAMs that specify slower timing only at higher voltages.

Are the DNU (Do Not Use) balls on the VFBGA package required to be grounded?

No. Per datasheet Note 2 on Page 3, DNU pins (e.g., B1, C1, D2) may be left floating or tied to VSS-both configurations ensure proper operation. Grounding them improves mechanical stability during reflow but is not electrically required. No voltage or current is specified for DNU pins, and they must never be connected to VCC or driven signals.