Cypress Semiconductor Corp CY7C1041BNV33L-12VXC

Overview

CY7C1041BNV33L-12VXC from Cypress Semiconductor is a 256 K × 16 (4,194,304-bit) asynchronous CMOS static RAM with 12 ns access time, 3.3 V supply, TTL-compatible I/O, and byte-wide write control via BHE/ BLE pins. It operates in commercial temperature range (0 °C to +70 °C) and supports automatic CE-controlled power-down for low standby current (0.5 mA max).

For engineers reviewing the CY7C1041BNV33L-12VXC datasheet, CY7C1041BNV33L-12VXC pinout, CY7C1041BNV33L-12VXC application, or CY7C1041BNV33L-12VXC equivalent, key selection criteria include tAA = 12 ns read timing, dual-byte enable architecture, 44-pin TSOP II package with center VCC/VSS pinout, and 2.0 V data retention capability.

Technical Context

This SRAM implements a full asynchronous interface with independent byte enable control: BHE governs I/O8–I/O15 (high byte), BLE governs I/O0–I/O7 (low byte), enabling partial-word writes without read-modify-write cycles. Address decoding covers A0–A17 (262,144 words), supporting direct 16-bit bus interfacing.

Power management relies on CE-driven automatic power-down: when CE is HIGH, ICC drops to ≤0.5 mA (CMOS mode) or ≤40 mA (TTL mode), while data retention remains valid down to 2.0 V with ICCDR ≤330 μA - critical for battery-backed systems requiring nonvolatile hold.

Key Specifications

Pinout & Package

The CY7C1041BNV33L-12VXC is packaged in a 44-pin Thin Small Outline Package (TSOP II) with 400-mil body width and center power/ground pinout (VCC and VSS adjacent at pins 31/32 and 43/44), minimizing noise coupling and simplifying PCB layout for high-speed memory buses.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar asynchronous SRAM applications.

Compared with IS61LV25616AL-12TLI and MC14LC54816FNR2, the CY7C1041BNV33L-12VXC uniquely combines 2.0 V data retention, center-pin TSOP II layout for noise reduction, and true dual-byte write enable - making it optimal for battery-backed, high-integrity, and EMI-sensitive embedded designs.

Availability

CY7C1041BNV33L-12VXC is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame stores, avionics display memory, and ATE pattern generation requiring stable component supply and long-term lifecycle assurance.

Supply support for CY7C1041BNV33L-12VXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in memory, PSoC, USB, and clock solutions for industrial, automotive, and consumer applications.

The CY7C1041BNV33 series belongs to Cypress's high-speed asynchronous SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where predictability and power efficiency outweigh density-per-pin trade-offs.

FAQ

What is the maximum operating frequency supported by CY7C1041BNV33L-12VXC?

The device does not operate on a clock signal; it is an asynchronous SRAM. Its maximum effective interface speed is determined by tRC = 12 ns, allowing up to ~83 MHz burst read/write cycles when controlled by external logic meeting setup/hold timing. No internal clock circuitry exists.

Can CY7C1041BNV33L-12VXC be used with 5 V logic interfaces?

No. The device is strictly 3.3 V-only: VCC must be 3.3 V ± 0.3 V, and input voltages exceeding VCC + 0.5 V (i.e., >3.8 V) risk permanent damage. Level-shifting circuitry is required for interfacing with 5 V microcontrollers or FPGAs.

Does CY7C1041BNV33L-12VXC support interleaved addressing or page mode?

No. It is a fully asynchronous linear-address SRAM with no internal page registers or burst logic. Each address A0–A17 directly maps to a unique 16-bit word; all accesses are random with uniform 12 ns latency regardless of address sequence.

How is data retention verified during low-voltage operation?

Data retention is guaranteed per specification at VCC ≥ 2.0 V with CE held HIGH and inputs biased to VCC – 0.3 V or GND. Under these conditions, ICCDR remains ≤330 μA and stored bits retain validity indefinitely - confirmed by accelerated life testing per JEDEC JESD22-A107.