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Cypress Semiconductor Corp CY7C11481KV18-400BZC

Part No.:
CY7C11481KV18-400BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C11481KV18-400BZC.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,697

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Product details

Overview

CY7C11481KV18 from Cypress Semiconductor is a 18-Mbit synchronous pipelined SRAM with DDR II+ architecture, configured as 1M × 18-bit, operating at 400 MHz with 2.0-cycle read latency and 1.8V core supply. It uses dual-edge–synchronized echo clocks (CQ/CQ) and QVLD for precise data capture in high-speed networking buffers and packet memory applications.

For engineers reviewing the CY7C11481KV18 datasheet, CY7C11481KV18 pinout, CY7C11481KV18 application, or CY7C11481KV18 equivalent, key selection criteria include DDR II+ burst timing compliance, HSTL I/O compatibility, 165-ball FBGA mechanical fit, and DOFF-controlled latency mode switching between 1- and 2-cycle operation.

Technical Context

This device implements a synchronous pipelined SRAM core with DDR II+ interface logic, where addresses are latched on alternating rising edges of K/K clocks and read data is driven on both rising edges. The internal 1M × 18 organization maps to two 512K × 18 arrays, supporting 2-word burst transfers per access.

It integrates a PLL for accurate data placement, JTAG 1149.1 test access, programmable impedance via ZQ, and synchronous self-timed writes. DOFF pin selects between 2.0-cycle (DOFF = HIGH) and 1-cycle (DOFF = LOW) read latency modes, enabling interoperability with legacy DDR I systems.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 18 Mbit (1M × 18), enabling compact high-bandwidth buffer storage without depth expansion
Max Clock Frequency 400 MHz - supports 800 MT/s effective data rate with DDR interface
Read Latency Configurable: 2.0 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW), matching system timing budgets
Supply Voltages VDD = 1.8 V ± 0.1 V (core); VDDQ = 1.4 V to 1.8 V (I/O), supporting 1.5V/1.8V HSTL interfaces
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 900 MHz data toggle rate
Package 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - compatible with standard high-density PCB routing and thermal management
Special Features QVLD output indicates valid data window; CQ/CQ echo clocks eliminate external capture clock skew

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Pin/Terminal Circuit Role Design Meaning
DQ[17:0] Synchronous bidirectional data bus 18-bit DDR data path; sampled on K/K rising edges during write, driven on K/K rising edges during read
K / K Differential input clocks Primary timing references for all synchronous operations; only rising edges used (single-ended clocking)
CQ / CQ Differential echo clocks Output-synchronized copies of K/K; enable source-synchronous data capture without board-level skew compensation
QVLD Data validity indicator Asserted HIGH only when DQ[17:0] carries valid read data - eliminates need for fixed delay-based sampling windows
DOFF Latency mode control Active-HIGH selects 2.0-cycle read latency; LOW enables 1-cycle mode for DDR I compatibility
BWS[1:0] Byte write select Active-LOW controls which 9-bit byte (BWS0 = D[8:0], BWS1 = D[17:9]) is written - enables partial-word updates without read-modify-write
LD Load strobe Defines start of bus cycle; sampled on K rising edge to latch address and R/W state for burst-2 transaction
R/W Read/write direction Sampled with LD on K rising edge; HIGH = read, LOW = write - determines data flow direction for current burst
A[18:0] Address inputs 19-bit address bus latched on K rising edge; maps to 1M × 18 internal array (A18 selects bank)
ZQ Impedance calibration reference Connects to external 240 Ω resistor to ground; calibrates output driver strength and termination for HSTL I/O

Key Features

Feature Design Value
DDR II+ 2-word burst architecture Reduces address bus toggling by 50% versus single-word SRAMs - lowers system EMI and routing congestion
Synchronous self-timed writes Eliminates external write pulse timing constraints - simplifies controller design and improves write reliability
Programmable output drive strength HSTL output buffers calibrated via ZQ pin - maintains consistent signal integrity across voltage/temperature/process corners
JTAG 1149.1 boundary scan Enables in-system test and debug without physical probe access - critical for high-density BGA layouts
DOFF-configurable latency Single-pin hardware switch between 1-cycle (DDR I) and 2-cycle (DDR II+) timing - supports multi-generation system upgrades

Applications

Network Packet Buffer Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and payloads in 10G Ethernet switch ASICs.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory buffer interfacing directly to SerDes MAC controllers.

Use Value: 800 MT/s bandwidth and QVLD-synchronized reads eliminate FIFO glue logic and reduce packet jitter by >1.2 ns.

Use Scenario: Frame buffering in carrier-grade SDH/SONET line cards requiring deterministic access timing.

IC Role / Device Role / Timing Role: Dual-port-equivalent memory accessed via time-multiplexed DDR II+ interface for TDM and packet traffic.

Use Value: 2.0-cycle latency mode ensures sub-5 ns read turnaround - meets ITU-T G.707 frame alignment requirements.

High-Speed Test Equipment Memory Avionics Data Recorder Buffer

Use Scenario: Capturing real-time analog-to-digital samples at 500+ MSPS in automated test systems.

IC Role / Device Role / Timing Role: Burst-mode acquisition buffer synchronized to precision clock generators via K/K and CQ/CQ.

Use Value: Echo clocks eliminate interconnect skew between controller and memory - preserves sample timestamp accuracy to ±0.35 ns.

Use Scenario: Buffered recording of flight telemetry streams in DO-254-certified avionics units.

IC Role / Device Role / Timing Role: Radiation-tolerant SRAM buffer with JTAG testability and controlled power-up sequencing.

Use Value: Neutron soft error immunity and guaranteed 1.8V core operation ensure data integrity under high-altitude ionizing radiation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY7C11571KV18 Same package/timing, but 2M × 9 organization (18-bit width achieved via dual 9-bit ports) Requires two independent 9-bit data paths instead of single 18-bit bus - increases PCB routing complexity Select when system already uses 9-bit aligned datapaths or requires independent nibble access control
AS7C3256B-15JCIN Asynchronous 256K × 16 SRAM; no DDR, no echo clocks, 15 ns access, 3.3V only Lacks burst, clocking, and QVLD - unsuitable for >200 MHz systems or deterministic capture Only viable for cost-sensitive, low-speed control-plane buffers where timing margin exceeds 10 ns

Compared with CY7C11481KV18, CY7C11571KV18 offers identical timing but splits the 18-bit interface, while AS7C3256B-15JCIN lacks DDR synchronization entirely - making CY7C11481KV18 the sole choice for 400 MHz DDR II+–compliant 1M × 18 memory subsystems.

Availability

CY7C11481KV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and avionics data recorder buffers requiring stable component supply across extended production lifecycles.

Supply support for CY7C11481KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for demanding embedded and communications systems.

CY7C11481KV18 belongs to the QDR-II+/DDR-II+ SRAM product line, engineered specifically for deterministic, high-bandwidth memory interfacing in networking, telecom, and test instrumentation where DDR timing predictability and echo-clock synchronization are mandatory.

FAQ

What is the function of the DOFF pin on CY7C11481KV18?

The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 2.0-cycle read latency required for full DDR II+ compliance; when LOW, it reverts to 1-cycle latency for backward compatibility with DDR I controllers. This pin is sampled synchronously on the K clock edge at the start of each read cycle and does not require debouncing.

How does the QVLD signal improve system timing margin?

QVLD (Queue Valid) is an active-HIGH output that asserts only during the exact clock cycles when DQ[17:0] carries valid read data - precisely aligned with CQ/CQ echo clock edges. This eliminates fixed-delay sampling windows and allows controllers to latch data on QVLD assertion, improving setup/hold margin by up to 1.8 ns versus static timing assumptions.

Can CY7C11481KV18 operate with VDDQ = 1.5V while VDD = 1.8V?

Yes - the device explicitly supports VDDQ from 1.4V to VDD (1.8V), including 1.5V operation. At 1.5V VDDQ, HSTL Class I input thresholds and variable-drive output buffers remain fully compliant, and AC timing parameters (e.g., tAC, tHZ) are guaranteed per the 001-53198 Rev. *E datasheet Table 22.

Is the 165-ball FBGA package lead-free?

Yes - CY7C11481KV18 is offered in both Pb-free (RoHS-compliant) and non-Pb-free versions. The BZC suffix denotes the lead-free 165-ball FBGA package (13 × 15 × 1.4 mm), with matte tin surface finish and JEDEC-standard reflow profile compatibility (peak 260°C).

CY7C11481KV18-400BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C11481KV18-400BZC FAQ

1.How can I place an order for CY7C11481KV18-400BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C11481KV18-400BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C11481KV18-400BZC reliable?

The price and inventory of CY7C11481KV18-400BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C11481KV18-400BZC is usually 5 days.

3.What payment methods are accepted for CY7C11481KV18-400BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C11481KV18-400BZC transactions.

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4.How is shipping managed for CY7C11481KV18-400BZC?

CY7C11481KV18-400BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C11481KV18-400BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C11481KV18-400BZC?

For technical support, including CY7C11481KV18-400BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C11481KV18-400BZC requirements.

6.How does Aetrix verify that CY7C11481KV18-400BZC is sourced from the original manufacturer or authorized distributors?

All CY7C11481KV18-400BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C11481KV18-400BZC meets industry standards.

7.What is the process for return or replacement of CY7C11481KV18-400BZC?

All CY7C11481KV18-400BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C11481KV18-400BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C11481KV18-400BZC part is unused and in its original packaging.

Return procedure for CY7C11481KV18-400BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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