Cypress Semiconductor Corp CY7C11681KV18-400BZXC
- Part No.:
- CY7C11681KV18-400BZXC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C11681KV18-400BZXC.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C11681KV18-400BZXC from Cypress Semiconductor is a 18-Mbit synchronous pipelined DDR II+ SRAM configured as 1 M × 18, operating at 400 MHz with 2.5-cycle read latency, HSTL I/O, and dual echo clocks (CQ/CQ) for precise high-speed data capture in memory subsystems. It supports programmable output impedance via ZQ pin and features QVLD for timing-critical data validation.
For engineers reviewing the CY7C11681KV18-400BZXC datasheet, CY7C11681KV18-400BZXC pinout, CY7C11681KV18-400BZXC application, or CY7C11681KV18-400BZXC equivalent, key selection criteria include burst depth (2-word), DOFF-configurable latency (1-cycle vs. 2.5-cycle), VDDQ range (1.4–1.8 V), FBGA-165 package footprint, and JTAG 1149.1 test port integration.
Technical Context
This SRAM implements a two-word burst architecture with double data rate transfers synchronized to complementary K/K clocks. All address, control, and data signals are registered on rising edges of K or K, enabling pipelined operation and eliminating external wait states during depth expansion.
The device integrates a phase-locked loop (PLL) for accurate internal timing alignment, supports synchronous self-timed writes, and uses echo clocks (CQ/CQ) edge-aligned to K/K to simplify system-level data capture without per-pin deskew. QVLD asserts half a clock cycle before valid data appears on DQ[17:0].
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 18 Mbit / 1 M × 18 - delivers 36-bit parallel throughput per burst cycle |
| Max Clock Frequency | 400 MHz - defines maximum sustained bandwidth of 1.44 GB/s (2 × 18-bit × 400 MHz) |
| Read Latency | 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable timing mode for system synchronization flexibility |
| VDD / VDDQ | Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports mixed-voltage interface design with HSTL compatibility |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB layout with thermal and signal integrity optimization |
| Interface Standard | HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 400 MHz with controlled slew and termination matching |
| Special Features | JTAG 1149.1 TAP + ZQ impedance calibration - enables production testability and board-level output driver tuning |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| K / K | Complementary input clocks | Reference timing for all synchronous operations; K rising edge latches address/control, K rising edge times second word of burst |
| CQ / CQ | Echo output clocks | Free-running, edge-aligned copies of K/K used by system logic to sample DQ[17:0] without skew compensation |
| QVLD | Valid data indicator | Asserted half-cycle before first valid data word appears on DQ - enables reliable latch window setup in FPGA/ASIC receivers |
| DOFF | Latency mode select | High = 2.5-cycle DDR II+ mode; Low = 1-cycle DDR I mode - configures internal pipeline depth at power-up |
| ZQ | Impedance calibration reference | Connected to 240 Ω resistor to VSS; initiates automatic output driver impedance tuning every 1024 cycles |
| R/W | Read/write direction control | Synchronous active-high signal sampled on K rising edge; determines whether next burst is read or write |
| LD | Load enable | Active-low synchronous signal that gates address and command registration on K rising edge |
| BWS[1:0] | Byte write select | Two-bit mask controlling which 9-bit subwords of DQ[17:0] are written - enables partial-word updates without read-modify-write |
Key Features
| Feature | Design Value |
|---|---|
| Two-word burst architecture | Reduces address bus toggling frequency by 50% versus single-word SRAMs - lowers EMI and routing congestion |
| Configurable read latency (1 or 2.5 cycles) | Enables drop-in compatibility with both DDR I and DDR II+ controller designs via single pin (DOFF) |
| Integrated echo clocks (CQ/CQ) | Eliminates need for external delay-locked loops or per-lane deskew circuitry in high-speed memory interfaces |
| QVLD timing indicator | Provides deterministic, clock-aligned strobe for data capture - removes setup/hold uncertainty in FPGA-based receivers |
| ZQ-based output impedance calibration | Maintains ±15% output drive matching across voltage/temperature drift - improves signal integrity without manual tuning |
Applications
| Telecom Line Cards | Network Packet Buffers |
|---|---|
|
Use Scenario: High-throughput packet buffering in 10G/40G Ethernet line cards requiring low-latency, burst-mode memory access. IC Role / Device Role / Timing Role: Primary burst SRAM for ingress/egress FIFOs, interfacing directly with SerDes PHYs and traffic managers via HSTL buses. Use Value: 2.5-cycle latency mode ensures deterministic timing closure at 400 MHz; echo clocks align with SerDes sampling windows to eliminate inter-lane skew. |
Use Scenario: Deep packet inspection engines needing rapid random-access storage for flow state tables and header caches. IC Role / Device Role / Timing Role: Dual-port-capable burst SRAM acting as lookup table accelerator, synchronized to network processor clock domains. Use Value: Byte-write capability (BWS[1:0]) enables efficient 1–2 byte updates to flow metadata without full-word overwrites or external logic. |
| Test Equipment Memory Subsystems | Industrial Real-Time Controllers |
|
Use Scenario: High-speed digital pattern generators and logic analyzers requiring deterministic, jitter-tolerant memory access for waveform capture. IC Role / Device Role / Timing Role: Burst buffer between ADC/DAC front-ends and FPGA processing cores, using QVLD for precise trigger-aligned data capture. Use Value: QVLD assertion timing guarantees ±50 ps data-valid window relative to CQ - critical for sub-nanosecond sampling accuracy. |
Use Scenario: Motion control PLCs demanding predictable memory response under hard real-time constraints (e.g., servo loop buffers). IC Role / Device Role / Timing Role: Deterministic latency SRAM for position/velocity history buffers, interfaced to ARM Cortex-R or TI C2000 microcontrollers. Use Value: DOFF-selectable latency allows same hardware design to support both legacy (DDR I) and upgraded (DDR II+) controller firmware versions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed burst SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AS7C3256B-15JIN | Asynchronous 256K × 16 CMOS SRAM; no DDR, no echo clocks, no QVLD; 15 ns access time | Used in non-pipelined, lower-bandwidth control-plane buffers where deterministic latency > timing closure is primary concern | Select only when DDR interface complexity is unnecessary and system clock < 100 MHz |
| IS61WV102418BLL-10TLI | Synchronous 1M × 18 SRAM with single-clock interface, 10 ns tAA, no burst, no DOFF latency selection | Suitable for simpler memory controllers lacking DDR timing management logic or PLL resources | Choose when echo clock generation, ZQ calibration, or configurable latency are not required |
Compared with AS7C3256B-15JIN and IS61WV102418BLL-10TLI, CY7C11681KV18-400BZXC uniquely delivers DDR bandwidth scaling, system-level timing simplification via CQ/CQ/QVLD, and field-programmable latency - making it irreplaceable in 400 MHz+ burst-oriented systems.
Availability
CY7C11681KV18-400BZXC is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, test equipment memory subsystems, and industrial real-time controllers requiring stable component supply across extended product lifecycles.
Supply support for CY7C11681KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.
CY7C11681KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking infrastructure and test instrumentation where deterministic timing and signal integrity are critical.
FAQ
What is the function of the DOFF pin on CY7C11681KV18-400BZXC?
The DOFF pin selects read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle latency; when LOW, it behaves as a DDR I device with 1-cycle latency. This configuration is sampled at power-up and remains fixed until reset. The pin must be externally tied to VDD or VSS - floating is not allowed.
How does the ZQ pin calibrate output impedance?
The ZQ pin connects to a 240 Ω resistor to VSS, enabling internal calibration circuitry to adjust output driver strength to match transmission line impedance within ±15%. Calibration occurs automatically every 1024 clock cycles and compensates for VDDQ and temperature variations - no software intervention required.
Can CY7C11681KV18-400BZXC operate with VDDQ = 1.5 V?
Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V. At 1.5 V, HSTL Class I input thresholds and output drive strength remain compliant, and ZQ calibration maintains ±15% impedance accuracy using a 240 Ω reference resistor. DC and AC specifications are fully characterized across this range.
What is the purpose of the CQ and CQ echo clocks?
CQ and CQ are free-running output clocks synchronized to K and K respectively, provided to simplify data capture in high-speed systems. They eliminate the need for external DLLs or per-pin deskew logic by delivering edge-aligned timing references that match the DQ[17:0] output transitions - reducing FPGA resource usage and improving timing margin.
CY7C11681KV18-400BZXC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C11681KV18-400BZXC FAQ
1.How can I place an order for CY7C11681KV18-400BZXC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C11681KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C11681KV18-400BZXC reliable?
The price and inventory of CY7C11681KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C11681KV18-400BZXC is usually 5 days.
3.What payment methods are accepted for CY7C11681KV18-400BZXC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C11681KV18-400BZXC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C11681KV18-400BZXC?
CY7C11681KV18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C11681KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C11681KV18-400BZXC?
For technical support, including CY7C11681KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C11681KV18-400BZXC requirements.
6.How does Aetrix verify that CY7C11681KV18-400BZXC is sourced from the original manufacturer or authorized distributors?
All CY7C11681KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C11681KV18-400BZXC meets industry standards.
7.What is the process for return or replacement of CY7C11681KV18-400BZXC?
All CY7C11681KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C11681KV18-400BZXC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C11681KV18-400BZXC part is unused and in its original packaging.
Return procedure for CY7C11681KV18-400BZXC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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