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Cypress Semiconductor Corp CY7C11681KV18-400BZXC

Part No.:
CY7C11681KV18-400BZXC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C11681KV18-400BZXC.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,417

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Product details

Overview

CY7C11681KV18-400BZXC from Cypress Semiconductor is a 18-Mbit synchronous pipelined DDR II+ SRAM configured as 1 M × 18, operating at 400 MHz with 2.5-cycle read latency, HSTL I/O, and dual echo clocks (CQ/CQ) for precise high-speed data capture in memory subsystems. It supports programmable output impedance via ZQ pin and features QVLD for timing-critical data validation.

For engineers reviewing the CY7C11681KV18-400BZXC datasheet, CY7C11681KV18-400BZXC pinout, CY7C11681KV18-400BZXC application, or CY7C11681KV18-400BZXC equivalent, key selection criteria include burst depth (2-word), DOFF-configurable latency (1-cycle vs. 2.5-cycle), VDDQ range (1.4–1.8 V), FBGA-165 package footprint, and JTAG 1149.1 test port integration.

Technical Context

This SRAM implements a two-word burst architecture with double data rate transfers synchronized to complementary K/K clocks. All address, control, and data signals are registered on rising edges of K or K, enabling pipelined operation and eliminating external wait states during depth expansion.

The device integrates a phase-locked loop (PLL) for accurate internal timing alignment, supports synchronous self-timed writes, and uses echo clocks (CQ/CQ) edge-aligned to K/K to simplify system-level data capture without per-pin deskew. QVLD asserts half a clock cycle before valid data appears on DQ[17:0].

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 18 Mbit / 1 M × 18 - delivers 36-bit parallel throughput per burst cycle
Max Clock Frequency 400 MHz - defines maximum sustained bandwidth of 1.44 GB/s (2 × 18-bit × 400 MHz)
Read Latency 2.5 cycles (DOFF = HIGH) or 1 cycle (DOFF = LOW) - selectable timing mode for system synchronization flexibility
VDD / VDDQ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to 1.8 V - supports mixed-voltage interface design with HSTL compatibility
Package 165-ball FBGA (13 × 15 × 1.4 mm) - standard footprint for high-density PCB layout with thermal and signal integrity optimization
Interface Standard HSTL Class I inputs / variable-drive HSTL outputs - ensures signal integrity at 400 MHz with controlled slew and termination matching
Special Features JTAG 1149.1 TAP + ZQ impedance calibration - enables production testability and board-level output driver tuning

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
K / K Complementary input clocks Reference timing for all synchronous operations; K rising edge latches address/control, K rising edge times second word of burst
CQ / CQ Echo output clocks Free-running, edge-aligned copies of K/K used by system logic to sample DQ[17:0] without skew compensation
QVLD Valid data indicator Asserted half-cycle before first valid data word appears on DQ - enables reliable latch window setup in FPGA/ASIC receivers
DOFF Latency mode select High = 2.5-cycle DDR II+ mode; Low = 1-cycle DDR I mode - configures internal pipeline depth at power-up
ZQ Impedance calibration reference Connected to 240 Ω resistor to VSS; initiates automatic output driver impedance tuning every 1024 cycles
R/W Read/write direction control Synchronous active-high signal sampled on K rising edge; determines whether next burst is read or write
LD Load enable Active-low synchronous signal that gates address and command registration on K rising edge
BWS[1:0] Byte write select Two-bit mask controlling which 9-bit subwords of DQ[17:0] are written - enables partial-word updates without read-modify-write

Key Features

Feature Design Value
Two-word burst architecture Reduces address bus toggling frequency by 50% versus single-word SRAMs - lowers EMI and routing congestion
Configurable read latency (1 or 2.5 cycles) Enables drop-in compatibility with both DDR I and DDR II+ controller designs via single pin (DOFF)
Integrated echo clocks (CQ/CQ) Eliminates need for external delay-locked loops or per-lane deskew circuitry in high-speed memory interfaces
QVLD timing indicator Provides deterministic, clock-aligned strobe for data capture - removes setup/hold uncertainty in FPGA-based receivers
ZQ-based output impedance calibration Maintains ±15% output drive matching across voltage/temperature drift - improves signal integrity without manual tuning

Applications

Telecom Line Cards Network Packet Buffers

Use Scenario: High-throughput packet buffering in 10G/40G Ethernet line cards requiring low-latency, burst-mode memory access.

IC Role / Device Role / Timing Role: Primary burst SRAM for ingress/egress FIFOs, interfacing directly with SerDes PHYs and traffic managers via HSTL buses.

Use Value: 2.5-cycle latency mode ensures deterministic timing closure at 400 MHz; echo clocks align with SerDes sampling windows to eliminate inter-lane skew.

Use Scenario: Deep packet inspection engines needing rapid random-access storage for flow state tables and header caches.

IC Role / Device Role / Timing Role: Dual-port-capable burst SRAM acting as lookup table accelerator, synchronized to network processor clock domains.

Use Value: Byte-write capability (BWS[1:0]) enables efficient 1–2 byte updates to flow metadata without full-word overwrites or external logic.

Test Equipment Memory Subsystems Industrial Real-Time Controllers

Use Scenario: High-speed digital pattern generators and logic analyzers requiring deterministic, jitter-tolerant memory access for waveform capture.

IC Role / Device Role / Timing Role: Burst buffer between ADC/DAC front-ends and FPGA processing cores, using QVLD for precise trigger-aligned data capture.

Use Value: QVLD assertion timing guarantees ±50 ps data-valid window relative to CQ - critical for sub-nanosecond sampling accuracy.

Use Scenario: Motion control PLCs demanding predictable memory response under hard real-time constraints (e.g., servo loop buffers).

IC Role / Device Role / Timing Role: Deterministic latency SRAM for position/velocity history buffers, interfaced to ARM Cortex-R or TI C2000 microcontrollers.

Use Value: DOFF-selectable latency allows same hardware design to support both legacy (DDR I) and upgraded (DDR II+) controller firmware versions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
AS7C3256B-15JIN Asynchronous 256K × 16 CMOS SRAM; no DDR, no echo clocks, no QVLD; 15 ns access time Used in non-pipelined, lower-bandwidth control-plane buffers where deterministic latency > timing closure is primary concern Select only when DDR interface complexity is unnecessary and system clock < 100 MHz
IS61WV102418BLL-10TLI Synchronous 1M × 18 SRAM with single-clock interface, 10 ns tAA, no burst, no DOFF latency selection Suitable for simpler memory controllers lacking DDR timing management logic or PLL resources Choose when echo clock generation, ZQ calibration, or configurable latency are not required

Compared with AS7C3256B-15JIN and IS61WV102418BLL-10TLI, CY7C11681KV18-400BZXC uniquely delivers DDR bandwidth scaling, system-level timing simplification via CQ/CQ/QVLD, and field-programmable latency - making it irreplaceable in 400 MHz+ burst-oriented systems.

Availability

CY7C11681KV18-400BZXC is available at Aetrix Electronics and suitable for telecom line cards, network packet buffers, test equipment memory subsystems, and industrial real-time controllers requiring stable component supply across extended product lifecycles.

Supply support for CY7C11681KV18-400BZXC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial, automotive, and communications markets.

CY7C11681KV18 belongs to Cypress's QDR II+/DDR II+ SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking infrastructure and test instrumentation where deterministic timing and signal integrity are critical.

FAQ

What is the function of the DOFF pin on CY7C11681KV18-400BZXC?

The DOFF pin selects read latency mode: when asserted HIGH, the device operates in DDR II+ mode with 2.5-cycle latency; when LOW, it behaves as a DDR I device with 1-cycle latency. This configuration is sampled at power-up and remains fixed until reset. The pin must be externally tied to VDD or VSS - floating is not allowed.

How does the ZQ pin calibrate output impedance?

The ZQ pin connects to a 240 Ω resistor to VSS, enabling internal calibration circuitry to adjust output driver strength to match transmission line impedance within ±15%. Calibration occurs automatically every 1024 clock cycles and compensates for VDDQ and temperature variations - no software intervention required.

Can CY7C11681KV18-400BZXC operate with VDDQ = 1.5 V?

Yes - the device supports VDDQ from 1.4 V to 1.8 V, including 1.5 V. At 1.5 V, HSTL Class I input thresholds and output drive strength remain compliant, and ZQ calibration maintains ±15% impedance accuracy using a 240 Ω reference resistor. DC and AC specifications are fully characterized across this range.

What is the purpose of the CQ and CQ echo clocks?

CQ and CQ are free-running output clocks synchronized to K and K respectively, provided to simplify data capture in high-speed systems. They eliminate the need for external DLLs or per-pin deskew logic by delivering edge-aligned timing references that match the DQ[17:0] output transitions - reducing FPGA resource usage and improving timing margin.

CY7C11681KV18-400BZXC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II+
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
400 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C11681KV18-400BZXC FAQ

1.How can I place an order for CY7C11681KV18-400BZXC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C11681KV18-400BZXC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C11681KV18-400BZXC reliable?

The price and inventory of CY7C11681KV18-400BZXC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C11681KV18-400BZXC is usually 5 days.

3.What payment methods are accepted for CY7C11681KV18-400BZXC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C11681KV18-400BZXC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C11681KV18-400BZXC?

CY7C11681KV18-400BZXC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C11681KV18-400BZXC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C11681KV18-400BZXC?

For technical support, including CY7C11681KV18-400BZXC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C11681KV18-400BZXC requirements.

6.How does Aetrix verify that CY7C11681KV18-400BZXC is sourced from the original manufacturer or authorized distributors?

All CY7C11681KV18-400BZXC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C11681KV18-400BZXC meets industry standards.

7.What is the process for return or replacement of CY7C11681KV18-400BZXC?

All CY7C11681KV18-400BZXC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C11681KV18-400BZXC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C11681KV18-400BZXC part is unused and in its original packaging.

Return procedure for CY7C11681KV18-400BZXC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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