Cypress Semiconductor Corp CY7C12501KV18-400BZC
- Part No.:
- CY7C12501KV18-400BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C12501KV18-400BZC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:4,968
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C12501KV18 from Cypress Semiconductor is a 36-Mbit DDR II+ SRAM configured as 1M × 36, operating at up to 400 MHz with 2.0-cycle read latency, HSTL I/O, and dual echo clocks (CQ/CQ) for precise data capture in high-speed memory subsystems used in network packet buffers and baseband processing.
For engineers reviewing the CY7C12501KV18 datasheet, CY7C12501KV18 pinout, CY7C12501KV18 application, or CY7C12501KV18 equivalent, key selection criteria include 1M × 36 bus width support, 400 MHz clock frequency, DOFF-configurable latency mode, QVLD timing alignment, and 165-ball FBGA (13 × 15 × 1.4 mm) mechanical compatibility.
Technical Context
This device implements a synchronous pipelined SRAM core with DDR II+ architecture, using two independent input clocks (K and K) to latch addresses and register write data on alternating rising edges. Read data is driven synchronously on both K and K edges, enabling true double-data-rate operation at 900 Mbps effective data rate.
The integrated PLL ensures accurate data placement relative to echo clocks CQ/CQ, while QVLD provides edge-aligned validity indication. Byte write select inputs (BWS[3:0]) enable granular 8-bit writes across the full 36-bit data bus without disturbing adjacent bytes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 36 Mbit (1M × 36), supporting 512K × 36 dual-array internal structure |
| Max Clock Frequency | 400 MHz - enables 800 MT/s burst throughput with 2-word burst mode |
| Read Latency | 2.0 cycles (DOFF = HIGH) or 1.0 cycle (DOFF = LOW) - selectable via control pin |
| I/O Voltage | VDDQ = 1.4 V to 1.8 V - supports both 1.5 V and 1.8 V system interfaces |
| Core Voltage | VDD = 1.8 V ± 0.1 V - fixed low-voltage core for reduced dynamic power |
| Package | 165-ball FBGA (13 mm × 15 mm × 1.4 mm) - standard footprint for high-density PCB layout |
| Output Interface | HSTL Class I - matched drive strength and termination for >400 MHz signaling integrity |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Synchronous bidirectional data bus | 36-bit wide DDR interface; sampled on K/K rising edges during writes, driven on same edges during reads with QVLD alignment |
| BWS[3:0] | Byte write select inputs | Active-low controls for independent 8-bit write masking across all 36 bits - enables partial writes without read-modify-write |
| K / K | Differential clock inputs | Complementary clocks used for address latching, data registration, and output timing - only rising edges are functional |
| CQ / CQ | Echo clock outputs | Free-running, phase-aligned copies of K/K for simplified system-level data capture - eliminate board trace skew compensation |
| QVLD | Valid data indicator | Edge-aligned with CQ/CQ; asserts one cycle after valid read data appears on DQ - enables reliable latch timing in FPGA/ASIC receivers |
| DOFF | Latency configuration input | High = 2.0-cycle latency mode (DDR II+); Low = 1.0-cycle latency (DDR I-compatible) - sets internal pipeline depth |
| ZQ | Impedance calibration reference | Connects to external 240 Ω resistor to ground to calibrate output driver impedance to 0.2 × RQ (~48 Ω) for signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| 2-word burst architecture | Halves required address bus transitions per access - reduces routing congestion and timing closure effort in wide-bus systems |
| Programmable read latency (1.0 or 2.0 cycles) | DOFF pin selects between DDR I–compatible timing and higher-bandwidth DDR II+ mode - enables design reuse across generations |
| Integrated PLL with echo clocks | Eliminates need for external delay-locked loops or phase interpolators - simplifies clock tree design and improves jitter tolerance |
| HSTL Class I I/O with variable drive | Supports 1.4–1.8 V VDDQ and matches JEDEC HSTL-18 specs - ensures interoperability with FPGAs and ASICs in telecom infrastructure |
| JTAG 1149.1 test access port | Enables boundary-scan testing and in-system programming without additional test fixtures - reduces manufacturing test cost |
Applications
| Telecom Packet Buffering | Wireless Baseband Processing |
|---|---|
|
Use Scenario: High-throughput line cards in 4G/LTE eNodeB requiring temporary storage of fragmented IP packets before scheduling and modulation. IC Role / Device Role / Timing Role: Primary burst-access buffer interfacing directly with FPGA-based scheduler logic via 36-bit HSTL bus and echo-clock–synchronized reads. Use Value: 400 MHz clock + 2-word burst delivers 28.8 Gbps sustained bandwidth - meets LTE-A carrier aggregation buffering demands without interleaving overhead. |
Use Scenario: Real-time FFT/IFFT and channel estimation buffers in massive MIMO radio units where deterministic latency and wide data paths reduce processing pipeline stalls. IC Role / Device Role / Timing Role: Synchronous pipelined memory providing zero-wait-state access to 36-bit complex sample streams under strict 1.0/2.0-cycle latency constraints. Use Value: DOFF-selectable latency allows tuning to match FPGA fabric timing margins - avoids retiming registers and preserves critical path timing. |
| Network Switch Fabric Lookup | Industrial Vision Preprocessing |
|
Use Scenario: TCAM-assisted forwarding table caching in Layer 3 switches, where rapid parallel lookups require wide, low-latency memory access. IC Role / Device Role / Timing Role: High-speed SRAM serving as shadow copy of forwarding database, accessed via parallel 36-bit address/data bus synchronized to switch ASIC clock domain. Use Value: BWS[3:0] enables atomic updates to individual octets within 36-bit entries - eliminates read-modify-write cycles during dynamic route updates. |
Use Scenario: On-camera preprocessing pipeline storing raw Bayer sensor frames prior to demosaicing and noise reduction in embedded vision SoCs. IC Role / Device Role / Timing Role: Burst-capable frame buffer interfacing with image signal processor (ISP) over HSTL bus, leveraging QVLD for precise pixel data capture timing. Use Value: QVLD edge alignment with CQ/CQ removes setup/hold uncertainty at receiver - critical for error-free capture of 12-bit pixel data at >200 MHz effective rate. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C12481KV18 | 2M × 18 organization, same 400 MHz speed and DDR II+ architecture but half the data width and double the depth | Better suited for 18-bit DSP buses or dual-channel 18-bit interfaces rather than 36-bit single-channel systems | Select when system bus width is 18-bit or when depth-critical buffering (e.g., longer FIFOs) outweighs width requirements |
| AS7C336000B-400BIN | 36-Mbit QDR II SRAM (1M × 36), 400 MHz, but uses separate read/write ports and lacks echo clocks or QVLD | Requires external clock forwarding and data-valid generation - increases FPGA logic overhead and PCB routing complexity | Choose only if legacy QDR II ecosystem compatibility is mandatory and echo-clock simplification is not required |
Compared with CY7C12481KV18 and AS7C336000B-400BIN, CY7C12501KV18 uniquely combines 36-bit width, echo-clock–assisted timing, and QVLD–guided capture - reducing system-level timing margin risk in FPGA-based high-speed designs.
Availability
CY7C12501KV18 is available at Aetrix Electronics and suitable for telecom infrastructure, wireless baseband processing, and industrial vision systems requiring stable component supply, long-lifecycle support, and guaranteed FBGA package availability.
Supply support for CY7C12501KV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a fabless semiconductor company specializing in high-performance memory, microcontrollers, and programmable analog/digital ICs for industrial, automotive, and communications markets.
CY7C12501KV18 belongs to the DDR II+ SRAM product line, designed specifically for high-bandwidth, low-latency buffering in networking and wireless infrastructure where deterministic timing and wide data paths are essential.
FAQ
What is the function of the DOFF pin on CY7C12501KV18?
The DOFF (Data-Off) pin configures read latency mode: when asserted HIGH, it enables 2.0-cycle DDR II+ latency; when LOW, it selects 1.0-cycle DDR I–compatible latency. This pin is sampled synchronously on the rising edge of the K clock during initialization and remains latched until reset or power cycle.
How does the ZQ pin calibrate output impedance?
ZQ connects to an external 240 Ω resistor to ground, allowing internal circuitry to adjust driver output impedance to 48 Ω (0.2 × 240 Ω). This calibration ensures consistent signal integrity across voltage and temperature variations and matches typical PCB trace impedances without requiring external series resistors.
Can CY7C12501KV18 operate with only one clock input (K only)?
No. The device requires both K and K inputs - they are complementary and used together for address latching, data registration, and output timing. Driving only K while leaving K floating or grounded violates AC timing specifications and will cause functional failure; both must be driven with proper differential swing and phase relationship.
What is the purpose of the QVLD signal in system-level timing?
QVLD is edge-aligned with the CQ and CQ echo clocks and indicates exactly when valid read data appears on DQ[35:0]. It eliminates setup/hold uncertainty at the receiving device (e.g., FPGA input register), enabling reliable capture without manual timing margining or delay-chain tuning in high-speed designs.
CY7C12501KV18-400BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II+
- Memory Size:
- 36Mbit
- Memory Organization:
- 1M x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 400 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C12501KV18-400BZC FAQ
1.How can I place an order for CY7C12501KV18-400BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C12501KV18-400BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C12501KV18-400BZC reliable?
The price and inventory of CY7C12501KV18-400BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C12501KV18-400BZC is usually 5 days.
3.What payment methods are accepted for CY7C12501KV18-400BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C12501KV18-400BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C12501KV18-400BZC?
CY7C12501KV18-400BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C12501KV18-400BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C12501KV18-400BZC?
For technical support, including CY7C12501KV18-400BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C12501KV18-400BZC requirements.
6.How does Aetrix verify that CY7C12501KV18-400BZC is sourced from the original manufacturer or authorized distributors?
All CY7C12501KV18-400BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C12501KV18-400BZC meets industry standards.
7.What is the process for return or replacement of CY7C12501KV18-400BZC?
All CY7C12501KV18-400BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C12501KV18-400BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C12501KV18-400BZC part is unused and in its original packaging.
Return procedure for CY7C12501KV18-400BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C12501KV18-400BZC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

