Cypress Semiconductor Corp CY7C1312BV18-167BZC

Overview

CY7C1312BV18 from Cypress Semiconductor is a 1M × 18-bit, 18-Mbit QDR-II SRAM with separate read/write ports, 250 MHz clock support (167 MHz variant), DDR interfaces on both ports, and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It delivers 500 MT/s effective data rate per port and operates with core VDD = 1.8 V ±0.1 V and I/O VDDQ = 1.4–1.8 V, targeting high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1312BV18 datasheet, CY7C1312BV18 pinout, CY7C1312BV18 application, or CY7C1312BV18 equivalent, key selection criteria include burst depth (2-word), echo clock support (CQ/CQ), HSTL-18-compatible I/O drive, JTAG 1149.1 test access, and DLL-based timing alignment for sub-ns data capture at 500 MHz.

Technical Context

The CY7C1312BV18 implements QDR-II architecture with fully independent synchronous read and write ports sharing a multiplexed 19-bit address bus (A[18:0]). Read addresses latch on K rising edge; write addresses latch on K rising edge; output data is clocked by C/C pair with echo clocks CQ/CQ referenced to C/C for deskewed capture.

It uses on-chip delay lock loop (DLL) for precise internal timing alignment, supports variable-drive HSTL-18 outputs, and enables depth expansion via RPS/WPS and BWS[1:0] controls. All writes are self-timed and synchronous, ensuring full data coherency without external turnaround cycles.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.

Compared with IDT72T3615L10PA and ISSI IS61WV102418B, CY7C1312BV18 uniquely combines DDR bandwidth, echo-clock timing aid, and DLL alignment - enabling reliable 500 MHz data capture without external PLLs or complex board-level skew compensation.

Availability

CY7C1312BV18 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, baseband processing cache, and high-frequency trading engine applications requiring stable component supply and long-term industrial availability.

Supply support for CY7C1312BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

CY7C1312BV18 belongs to the QDR-II SRAM product line, engineered specifically for deterministic, full-duplex memory access in multi-gigabit packet-processing systems where bus turnaround latency must be eliminated.

FAQ

What is the minimum VDDQ voltage supported by CY7C1312BV18?

The device specifies VDDQ = 1.4 V to VDD (1.8 V). Operation below 1.4 V is not characterized or guaranteed - HSTL-18 driver thresholds and timing margins degrade outside this range, risking setup/hold violations at 167 MHz.

Can CY7C1312BV18 operate without the DLL enabled?

Yes - asserting DOFF LOW disables the DLL, switching to static delay path mode. However, AC timing parameters change significantly (e.g., tAC increases by ~1.5 ns), and echo clock alignment to C/C is lost, requiring redesign of capture logic.

How does BWS[1:0] function in 18-bit mode?

BWS0 controls D[8:0] (9 bits); BWS1 controls D[17:9] (9 bits). Both are active-LOW. Asserting only BWS0 writes the lower byte group; asserting only BWS1 writes the upper; deasserting both blocks all writes to D[17:0].

Is ZQ pin required for functional operation?

ZQ is mandatory for calibrated output impedance matching. Leaving it unconnected or tied to GND violates the datasheet and causes undefined drive strength, leading to signal integrity failures above 200 MHz. It must connect to a 240 Ω resistor to ground or directly to VDDQ for minimum drive.