Cypress Semiconductor Corp CY7C1314BV18-167BZC

Overview

CY7C1314BV18 from Cypress Semiconductor is a 512K × 36-bit, 18-Mbit QDR-II SRAM with separate read/write ports, 250 MHz clock support (167 MHz variant), DDR interfaces on both ports (500 Mbps effective data rate), and 165-ball FBGA (13 × 15 × 1.4 mm) packaging. It delivers concurrent read/write operations for high-bandwidth packet buffering in network line cards.

For engineers reviewing the CY7C1314BV18 datasheet, CY7C1314BV18 pinout, CY7C1314BV18 application, or CY7C1314BV18 equivalent, key selection criteria include burst depth (2-word), I/O voltage compatibility (VDDQ = 1.4–1.8 V), echo clock timing (CQ/CQ), HSTL-18 output drive, and JTAG 1149.1 test access support.

Technical Context

The CY7C1314BV18 implements QDR-II architecture with fully independent synchronous read and write ports sharing a multiplexed 18-bit address bus (A[17:0]). Read addresses latch on K rising edge; write addresses latch on K rising edge. Each access transfers two sequential 36-bit words - one per clock cycle - enabling true concurrent operation without bus turnaround.

Output data is synchronized to C/C clocks with echo clocks CQ/CQ referenced to those outputs, minimizing skew in high-speed backplane designs. Internal DLL ensures precise data placement relative to C/C edges, while DOFF allows DLL disable for deterministic timing margins. Write operations use on-chip self-timed control with BWS[3:0] byte-select granularity.

Key Specifications

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Compared with IDT72T3615L10PA and ISSI IS61WV102436B, the CY7C1314BV18 provides optimal balance of 2-word burst efficiency, echo-clock timing simplicity, and 167 MHz power-performance trade-off for telecom and networking buffer applications.

Availability

CY7C1314BV18 is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom baseband processing, and ATE pattern storage requiring stable component supply and long-term industrial availability.

Supply support for CY7C1314BV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial systems, with emphasis on signal integrity and timing precision.

The QDR-II SRAM product line targets applications demanding deterministic low-latency memory access with concurrent read/write capability - especially in packet-processing infrastructure where bus turnaround overhead must be eliminated.

FAQ

What is the function of the ZQ pin on CY7C1314BV18?

The ZQ pin calibrates the output driver impedance of Q[35:0], CQ, and CQ to match the system data bus. It must be connected to a 240 Ω resistor to ground to set output impedance to 50 Ω (0.2 × RQ). Direct connection to VDDQ enables minimum impedance mode; floating or grounding ZQ is prohibited and will cause undefined drive strength.

Can CY7C1314BV18 operate with only a single clock (K) instead of differential K/K?

Yes - the device supports single-clock mode where K serves as both read and write address latch clock, and also drives output data timing. In this configuration, C and C must be tied together and driven as a single clock, and CQ/CQ derive from K. However, differential K/K is recommended for noise immunity and timing margin in high-speed systems.

How does the BWS[3:0] signal affect write operations in CY7C1314BV18?

BWS[3:0] are active-low byte write enables that control which 8-bit segments of the 36-bit D[35:0] bus are written to memory. BWS0 controls D[7:0], BWS1 controls D[15:8], BWS2 controls D[23:16], and BWS3 controls D[35:24]. Deasserting any BWS line preserves the corresponding byte in memory without requiring a read-modify-write sequence.

Is the DOFF pin required to be tied high for normal operation?

Yes - DOFF must be pulled high (to VDDQ) for normal DLL-enabled operation. Pulling DOFF low disables the internal Delay Lock Loop, reverting to fixed-phase output timing with reduced jitter compensation. This mode is only used when DLL lock instability occurs or when deterministic, non-adaptive timing is preferred for timing analysis.