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Cypress Semiconductor Corp CY7C1314CV18-200BZC

Part No.:
CY7C1314CV18-200BZC
Manufacturer:
Cypress Semiconductor Corp
Category:
Memory
Package:
165-LBGA
Datasheet:
AetrixCY7C1314CV18-200BZC.pdf
Description:
IC SRAM 18MBIT PARALLEL 165FBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,570

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Product details

Overview

CY7C1314CV18-200BZC from Cypress Semiconductor is a 18-Mbit QDR® II SRAM with 512K × 36 organization, 200 MHz maximum operating frequency, 1.8V core supply (±0.1V), and 1.4–1.8V I/O supply (VDDQ). It implements separate read/write ports with DDR interfaces on both, 2-word burst architecture, and DLL-enabled 1.5-cycle read latency - deployed in high-bandwidth networking packet buffers and switch fabric memory subsystems.

For engineers reviewing the CY7C1314CV18-200BZC datasheet, CY7C1314CV18-200BZC pinout, CY7C1314CV18-200BZC application, or CY7C1314CV18-200BZC equivalent, key selection considerations include x36 bus width support, echo clock (CQ/CQ) timing alignment for high-speed data capture, dual-clock domain operation (K/K and C/C), and FBGA-165 package compatibility with dense PCB layouts.

Technical Context

The CY7C1314CV18-200BZC uses QDR II architecture with fully independent read and write ports sharing a multiplexed 18-bit address bus (A[17:0]), enabling concurrent transactions without bus turnaround. Its internal organization comprises two 256K × 36 arrays, supporting depth expansion via RPS/WPS and byte-write select (BWS[3:0]) control.

It employs synchronous self-timed writes, HSTL-compatible variable-drive output buffers, and a Delay Lock Loop (DLL) that aligns echo clocks (CQ/CQ) to output clocks (C/C) for precise data capture at 400 Mbps per pin. In DLL-off mode, it operates as a QDR I device with 1-cycle latency up to 167 MHz.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18 Mbit (512K × 36 configuration)
Max Clock Frequency 200 MHz - supports 400 MT/s effective data rate per pin via DDR interface
Read Latency 1.5 cycles with DLL enabled; enables deterministic timing for pipeline-synchronized controllers
Supply Voltages VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) - allows interface voltage scaling with FPGA/ASIC I/O banks
Package 165-ball FBGA (13 × 15 × 1.4 mm) - RoHS-compliant, 0.8 mm ball pitch, suitable for high-density routing
Interface Standard HSTL Class I compatible outputs - ensures signal integrity at 500 MHz data edges with controlled impedance drive
JTAG Support IEEE 1149.1 compliant TAP controller - enables boundary scan testing and system-level diagnostics

Pinout & Package

Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, Pb-free option available.

Pin/Terminal Circuit Role Design Meaning
D[35:0] Synchronous write data inputs Latched on rising edge of K clock; supports full 36-bit parallel writes per cycle
Q[35:0] Synchronous read data outputs Driven on rising edges of C and C clocks; delivers 2-word burst (72 bits total) per access
RPS / WPS Active-low port select controls Enables independent gating of read/write ports - essential for depth expansion and transaction isolation
BWS[3:0] Byte write select inputs Permits selective 9-bit byte updates within 36-bit word - preserves unmodified data without read-modify-write overhead
C / C, CQ / CQ Output clock and echo clock pairs C/C deskews output timing across devices; CQ/CQ provide source-synchronous capture references for FPGA receivers
K / K Input clock pair Rising edges latch all synchronous inputs (address, control, data); defines fundamental timing domain for all operations
ZQ Impedance calibration input Connects to external resistor to ground to tune output driver impedance to match PCB trace (0.2 × RQ)
DOFF DLL disable control Pulling low disables DLL - reverts to QDR I timing (1-cycle latency, ≤167 MHz) for legacy compatibility

Key Features

Feature Design Value
Separate read/write data ports Eliminates bus turnaround delay - enables true concurrent read+write at full bandwidth
2-word burst architecture Delivers 72 bits per access (36-bit × 2) - matches common network packet header + payload fetch patterns
Echo clock synchronization (CQ/CQ) Provides deterministic, board-level skew-compensated data capture timing for FPGA-based controllers
Programmable output impedance (ZQ) Enables dynamic matching to 50 Ω or custom trace impedances - reduces signal reflections at 500 MHz edges
DLL-enabled 1.5-cycle read latency Reduces pipeline stalls in high-throughput switch ASICs while maintaining timing margin under process/voltage/temperature variation

Applications

Network Packet Buffering Switch Fabric Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 Ethernet switches.

IC Role / Device Role / Timing Role: High-speed dual-port SRAM acting as first-level buffering between MAC and switching engine, synchronized to 200 MHz system clock.

Use Value: Concurrent read/write eliminates arbitration delay - sustains line-rate forwarding for 10 GbE traffic with sub-10 ns access granularity.

Use Scenario: Holding forwarding table entries and queue state in modular chassis-based routers.

IC Role / Device Role / Timing Role: x36-wide memory node in distributed fabric interconnect, interfacing with multiple ASICs via HSTL buses.

Use Value: 2-word burst and echo clocks enable precise multi-device alignment - critical for deterministic cut-through latency across 16+ memory banks.

Telecom Line Card Buffering High-Performance Test Equipment Memory

Use Scenario: Temporary storage of SONET/SDH frame payloads during OAM processing in optical transport modules.

IC Role / Device Role / Timing Role: Burst-capable SRAM buffer synchronized to framer clock domain, using C/C and CQ/CQ for jitter-tolerant capture.

Use Value: DLL-off mode (167 MHz, 1-cycle latency) provides fallback timing margin for temperature-varying line card environments.

Use Scenario: Real-time waveform capture and pattern generation in automated test systems requiring deterministic memory access.

IC Role / Device Role / Timing Role: Dual-port memory serving as deep sample buffer between ADC/DAC and FPGA controller, clocked at 200 MHz.

Use Value: Full data coherency ensures latest-written samples are always read - avoids stale-data errors in closed-loop stimulus-response loops.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IDT72T36150L10BG 36-Mbit (1M × 36), 100 MHz max, LVDS interface, no DLL, 2.5V VDDQ Lower bandwidth, differential signaling - suited for lower-power, noise-sensitive backplane links Select when system requires LVDS compatibility and thermal budget limits 1.8V operation
ISSI IS61WV102436B 36-Mbit (1M × 36), 166 MHz max, single-ended HSTL, no echo clocks or DLL No CQ/CQ or DLL - lacks skew compensation for >15 cm trace lengths or multi-device fanout Choose for cost-sensitive designs where board layout permits tight clock/data routing and timing margin is ample

Compared with IDT72T36150L10BG and IS61WV102436B, the CY7C1314CV18-200BZC uniquely delivers 200 MHz DDR operation with echo-clock–assisted data capture and DLL-based latency control - making it optimal for next-generation switch fabrics requiring sub-5 ns timing closure across 32-bit+ buses.

Availability

CY7C1314CV18-200BZC is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, telecom line card buffering, and high-performance test equipment requiring stable component supply and long-term industrial availability.

Supply support for CY7C1314CV18-200BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for networking, automotive, and industrial applications, with emphasis on signal integrity and timing precision.

The QDR® II SRAM product line targets high-speed data-path applications demanding deterministic latency, concurrent access, and robust DDR timing - specifically engineered for switch ASICs, packet processors, and test instrumentation.

FAQ

What is the function of the DOFF pin on CY7C1314CV18-200BZC?

The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled low, the device reverts to QDR I timing with 1-cycle read latency and a maximum frequency of 167 MHz. For normal QDR II operation at 200 MHz with 1.5-cycle latency, DOFF must be tied high via a ≤10 kΩ pull-up resistor to VDDQ.

How does the ZQ pin affect output driver performance?

The ZQ pin connects to an external resistor (RQ) to ground to calibrate output driver impedance. The device sets CQ, CQ, and Q[35:0] output impedance to 0.2 × RQ - typically 25 Ω for a 125 Ω resistor. This matching minimizes signal reflections on high-speed HSTL buses. Leaving ZQ floating or tying it to GND violates specifications and degrades signal integrity.

Can CY7C1314CV18-200BZC operate in single-clock mode?

Yes - by connecting C and K, and C and K, the device enters single-clock mode. In this configuration, all data transfers (read and write) are synchronized to the K/K clock pair only. Output data appears on Q[35:0] on rising edges of K/K, and echo clocks CQ/CQ track K/K instead of C/C. This simplifies clock distribution but sacrifices deskew capability.

What is the purpose of BWS[3:0] in x36 configuration?

BWS[3:0] are active-low byte write select signals that enable granular 9-bit updates within the 36-bit word. BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3 controls D[35:27]. Asserting only selected BWS lines preserves unmodified bytes during partial writes - eliminating read-modify-write cycles and reducing power in sparse update scenarios.

CY7C1314CV18-200BZC Specifications

Product attributes
Attribute value
Manufacturer:
Cypress Semiconductor Corp
Series:
-
Package/Case:
165-LBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-FBGA (13x15)

CY7C1314CV18-200BZC FAQ

1.How can I place an order for CY7C1314CV18-200BZC through Aetrix?

Please submit a Request for Quotation (RFQ) for CY7C1314CV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for CY7C1314CV18-200BZC reliable?

The price and inventory of CY7C1314CV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1314CV18-200BZC is usually 5 days.

3.What payment methods are accepted for CY7C1314CV18-200BZC?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1314CV18-200BZC transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for CY7C1314CV18-200BZC?

CY7C1314CV18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your CY7C1314CV18-200BZC order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for CY7C1314CV18-200BZC?

For technical support, including CY7C1314CV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1314CV18-200BZC requirements.

6.How does Aetrix verify that CY7C1314CV18-200BZC is sourced from the original manufacturer or authorized distributors?

All CY7C1314CV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1314CV18-200BZC meets industry standards.

7.What is the process for return or replacement of CY7C1314CV18-200BZC?

All CY7C1314CV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1314CV18-200BZC, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The CY7C1314CV18-200BZC part is unused and in its original packaging.

Return procedure for CY7C1314CV18-200BZC:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

CY7C1314CV18-200BZC Tags

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