Cypress Semiconductor Corp CY7C1314CV18-200BZI
- Part No.:
- CY7C1314CV18-200BZI
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1314CV18-200BZI.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
CY7C1314CV18 from Cypress Semiconductor is a 18-Mbit QDR® II SRAM with 512K × 36 organization, 2-word burst architecture, and dual DDR interfaces supporting 500 MHz data transfer on both read and write ports at 250 MHz clock frequency. It features separate read/write ports, echo clocks (CQ/CQ), DLL-enabled 1.5-cycle read latency, and operates at core VDD = 1.8 V ±0.1 V with IO VDDQ = 1.4–1.8 V. Used in high-bandwidth networking packet buffers and FPGA co-processor memory subsystems.
For engineers reviewing the CY7C1314CV18 datasheet, CY7C1314CV18 pinout, CY7C1314CV18 application, or CY7C1314CV18 equivalent, key selection criteria include x36 bus width support, 165-ball FBGA package compatibility, DLL-on/off timing modes, byte write select granularity (BWS[3:0]), and JTAG 1149.1 test access for system-level validation.
Technical Context
The CY7C1314CV18 implements a synchronous pipelined QDR II architecture with fully independent read and write ports sharing a multiplexed 18-bit address bus (A[17:0]). Read addresses latch on K rising edge; write addresses latch on K rising edge; output data is clocked by C/C with echo clocks CQ/CQ referenced to those edges.
It supports depth expansion via RPS/WPS control and byte-selectable writes using BWS[3:0], enabling partial 36-bit word updates without read-modify-write cycles. The integrated Delay Lock Loop (DLL) ensures precise 1.5-cycle read latency alignment when enabled; in DLL-off mode, it reverts to QDR I timing with 1-cycle latency up to 167 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 18 Mbit (512K × 36 configuration) |
| Max Clock Frequency | 250 MHz - enables 500 MT/s DDR throughput per port |
| Read Latency | 1.5 cycles with DLL enabled; 1 cycle with DLL disabled |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) |
| Burst Length | Fixed 2-word burst on all accesses - eliminates variable latency overhead |
| Package | 165-ball FBGA (13 × 15 × 1.4 mm) - supports high-pin-count routing in dense PCB layouts |
| JTAG Support | IEEE 1149.1 compliant TAP - enables boundary-scan testing and production diagnostics |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 13 mm × 15 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[35:0] | Synchronous write data inputs | 36-bit parallel data sampled on K/K rising edges; supports full or byte-selectable writes via BWS[3:0] |
| Q[35:0] | Synchronous read data outputs | 36-bit parallel outputs driven on C/C rising edges; tristated when RPS is deasserted |
| RPS / WPS | Port enable controls | Active-low synchronous selects for independent read/write port activation - enables concurrent transactions |
| BWS[3:0] | Byte write select inputs | Four independent active-low signals controlling D[8:0], D[17:9], D[26:18], D[35:27] - enables partial 36-bit word updates |
| C / C, K / K | Differential clock inputs | Four dedicated clock inputs: K/K for address/data capture; C/C for output timing - minimizes skew in high-speed systems |
| CQ / CQ | Echo clocks | Free-running clocks synchronized to C/C - simplify source-synchronous data capture at controller side |
| ZQ | Impedance calibration input | Connects to external resistor to ground to tune Q[35:0]/CQ/CQ output impedance to match board trace Z₀ |
| DOFF | DLL disable control | Active-low signal that disables internal DLL - forces QDR I timing mode for backward compatibility |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Eliminates bus turnaround delay - enables true concurrent read+write operations without arbitration |
| 2-word burst + DDR interface | Guarantees deterministic 2× data transfer per clock cycle - simplifies controller FIFO design and timing closure |
| Programmable output drive impedance (ZQ) | Enables dynamic impedance matching to PCB trace characteristics - reduces signal reflections and improves eye margin |
| Delay Lock Loop (DLL) | Aligns internal data paths to achieve 1.5-cycle read latency - critical for meeting tight setup/hold windows in 500 MT/s systems |
| JTAG 1149.1 test access port | Supports IEEE-standard boundary scan - enables automated PCB test, interconnect verification, and in-system debug |
Applications
| High-Speed Network Packet Buffer | FPGA-Based Protocol Accelerator |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/25G Ethernet line cards. IC Role / Device Role / Timing Role: Dual-port SRAM serving as zero-latency shared memory between MAC and traffic manager logic. Use Value: Concurrent read/write capability allows simultaneous header lookup (read) and payload buffering (write) without pipeline stalls. | Use Scenario: Offloading TCP/IP checksum, encryption, or packet classification tasks from host CPU using FPGA fabric. IC Role / Device Role / Timing Role: High-bandwidth scratchpad memory interfacing directly with FPGA's embedded memory controllers. Use Value: 500 MT/s DDR throughput sustains >10 Gbps data flow between FPGA logic blocks and external PHY layers. |
| Telecom Baseband Processing | Real-Time Video Frame Buffer |
Use Scenario: Supporting channel estimation and equalization in LTE/5G baseband units with multi-antenna MIMO processing. IC Role / Device Role / Timing Role: Low-latency memory for coefficient storage and intermediate result exchange between DSP cores. Use Value: 1.5-cycle DLL-aligned read latency ensures deterministic timing for real-time FFT and filter pipelines. | Use Scenario: Buffering uncompressed 4K@60fps video streams in broadcast-grade encoder/decoder modules. IC Role / Device Role / Timing Role: Dual-port frame buffer allowing simultaneous write of incoming frames and read of processed frames. Use Value: x36 bus width and 2-word burst deliver sustained 34.56 GB/s bandwidth needed for 4K RGB444 pixel rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T3615L10BG | 36-Mbit QDR II+ SRAM, 1000 MT/s (500 MHz clock), supports 2.5V VDDQ only | Higher density and speed but requires higher I/O voltage - incompatible with 1.4–1.8 V VDDQ systems | Select only if system supports 2.5V I/O and requires >18 Mbit capacity or >500 MT/s bandwidth |
| ISSI IS61WV102436B | Asynchronous 36-bit SRAM, 1024K × 36, no DDR, no DLL, max 166 MHz async operation | Lacks concurrent ports and burst DDR - cannot sustain same bandwidth or eliminate bus turnaround | Consider only for cost-sensitive, non-real-time applications where deterministic latency is not required |
Compared with IDT72T3615L10BG and IS61WV102436B, the CY7C1314CV18 uniquely balances 18-Mbit density, 1.4–1.8 V VDDQ flexibility, DLL-adjustable latency, and full QDR II feature set - making it optimal for power-constrained, high-throughput embedded telecom and FPGA acceleration designs.
Availability
CY7C1314CV18 is available at Aetrix Electronics and suitable for high-speed networking equipment, FPGA-based protocol accelerators, telecom baseband units, and real-time video processing systems requiring stable component supply across extended product lifecycles.
Supply support for CY7C1314CV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.
The QDR II SRAM product line was engineered specifically for deterministic, low-latency, high-bandwidth memory interfacing in packet-processing and FPGA-accelerated systems - emphasizing concurrent access, echo-clock synchronization, and DLL-controlled timing precision.
FAQ
What is the function of the DOFF pin on CY7C1314CV18?
The DOFF (DLL Turn Off) pin is an active-low control that disables the internal Delay Lock Loop. When pulled low, the device operates in QDR I timing mode with 1-cycle read latency and maximum frequency reduced to 167 MHz. For normal QDR II operation, DOFF must be tied high via ≤10 kΩ pull-up resistor to VDDQ.
How does the ZQ pin affect signal integrity in high-speed designs?
The ZQ pin connects to an external resistor to ground to calibrate the output driver impedance of Q[35:0], CQ, and CQ pins to match the PCB trace characteristic impedance (typically 50 Ω). This calibration reduces signal reflections and improves timing margins - especially critical at 500 MT/s data rates where mismatched termination causes significant eye closure.
Can CY7C1314CV18 operate with only one clock domain (K and C only)?
Yes. The device supports single-clock-domain operation where K and C are used together (and K/C are unused or tied appropriately). In this mode, data is captured and output using only the positive-edge clocks, simplifying clock tree design at the cost of reduced skew compensation capability compared to full differential clocking.
What is the role of BWS[3:0] during a write operation?
BWS[3:0] are active-low byte write select signals that independently enable or mask 9-bit segments of the 36-bit D[35:0] bus. When a BWS bit is low, its corresponding 9-bit byte is written; when high, that byte remains unaltered. This enables partial-word updates without requiring a read-modify-write sequence - essential for efficient metadata or descriptor table updates.
CY7C1314CV18-200BZI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (13x15)
CY7C1314CV18-200BZI FAQ
1.How can I place an order for CY7C1314CV18-200BZI through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1314CV18-200BZI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1314CV18-200BZI reliable?
The price and inventory of CY7C1314CV18-200BZI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1314CV18-200BZI is usually 5 days.
3.What payment methods are accepted for CY7C1314CV18-200BZI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1314CV18-200BZI transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C1314CV18-200BZI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1314CV18-200BZI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1314CV18-200BZI?
For technical support, including CY7C1314CV18-200BZI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1314CV18-200BZI requirements.
6.How does Aetrix verify that CY7C1314CV18-200BZI is sourced from the original manufacturer or authorized distributors?
All CY7C1314CV18-200BZI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1314CV18-200BZI meets industry standards.
7.What is the process for return or replacement of CY7C1314CV18-200BZI?
All CY7C1314CV18-200BZI units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1314CV18-200BZI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1314CV18-200BZI part is unused and in its original packaging.
Return procedure for CY7C1314CV18-200BZI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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