Cypress Semiconductor Corp CY7C1354C-200AXCT
- Part No.:
- CY7C1354C-200AXCT
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
CY7C1354C-200AXCT.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:4,454
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1354C-200AXCT from Cypress Semiconductor is a 9-Mbit (256K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in network switches and packet buffers. It operates at 200 MHz with zero wait states, supports 3.3 V core supply and 2.5/3.3 V I/O, and delivers 3.2 ns clock-to-output timing.
For engineers reviewing the CY7C1354C-200AXCT datasheet, CY7C1354C-200AXCT pinout, CY7C1354C-200AXCT application, or CY7C1354C-200AXCT equivalent, key selection criteria include burst order configuration (linear/interleaved), byte-write select granularity (BWa–BWd), synchronous self-timed write control, and compatibility with ZBT-style bus protocols in back-to-back read/write systems.
Technical Context
The device implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to CLK. Internal NoBL™ logic eliminates bus latency by enabling true back-to-back read/write operations without pipeline stalls.
It features four independent byte-write enables (BWa–BWd), synchronous self-timed writes, clock enable (CEN) for cycle extension, and IEEE 1149.1 JTAG boundary scan. Burst mode is selectable via MODE pin (linear or interleaved), and output drivers are synchronously tristated during write data phases to prevent bus contention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 9 Mbit (256K × 36 organization), enabling 36-bit wide data paths for high-bandwidth packet buffering. |
| Max Clock Frequency | 200 MHz - supports sustained 200 MT/s throughput with no wait states in pipelined operation. |
| Access Time | 3.2 ns - defines minimum clock-to-output delay for timing-critical read cycles. |
| VDD Supply | 3.3 V ±0.3 V - single-core rail simplifies power delivery in legacy 3.3 V systems. |
| VDDQ Supply | 2.5 V or 3.3 V - allows I/O voltage scaling to match downstream logic (e.g., ASIC or FPGA I/O banks). |
| Burst Capability | Linear or interleaved - selected by MODE pin strap; matches standard memory controller burst patterns. |
| Byte Write Control | Four independent BWa–BWd signals - enables granular 8-bit writes within 36-bit word without read-modify-write. |
Pinout & Package
Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Input | 18-bit synchronous address bus sampled on rising CLK edge; selects one of 256K locations. |
| BWa–BWd | Byte Write Select | Active-low synchronous controls for DQa/DQPa, DQb/DQPb, DQc/DQPc, DQd/DQPd respectively. |
| CLK | Clock Input | Rising-edge-triggered master clock; qualified by CEN; drives all internal register stages. |
| CEN | Clock Enable | Active-low synchronous gate - suspends CLK recognition without deselecting device or disrupting pipeline state. |
| CE1, CE3 | Chip Enable (Low) | Synchronous active-low enables; used with CE2 (active-high) for multi-chip bank decoding. |
| OE | Output Enable | Asynchronous active-low - overrides internal logic to tristate outputs, but masked during write data phase. |
| ADV/LD | Advance/Load Control | Controls burst counter: HIGH advances address; LOW loads new address after deselection. |
| MODE | Burst Order Strap | Static input: HIGH = interleaved burst; LOW = linear burst - sets memory controller compatibility mode. |
| ZZ | Deep Sleep Mode | Asynchronous entry to low-power sleep; reduces standby current to <40 mA while retaining data. |
Key Features
| Feature | Design Value |
|---|---|
| No Bus Latency™ (NoBL™) Architecture | Enables unlimited consecutive read/write operations with zero wait states - eliminates pipeline bubbles in burst-intensive traffic. |
| Fully Registered I/O | All inputs and outputs synchronized to CLK rising edge - ensures deterministic setup/hold timing across temperature and voltage. |
| Synchronous Self-Timed Writes | On-chip write timing control eliminates external write pulse width constraints - simplifies timing closure in high-speed designs. |
| IEEE 1149.1 JTAG Boundary Scan | Supports production test and board-level diagnostics without requiring additional test access hardware. |
| Flexible I/O Voltage (VDDQ) | 2.5 V or 3.3 V operation - allows direct interfacing with mixed-voltage FPGAs or ASICs without level shifters. |
Applications
| Network Packet Buffer | High-Speed Switch Fabric Memory |
|---|---|
|
Use Scenario: Storing ingress/egress packets in Layer 2/3 Ethernet switches operating at 1 Gbps+ line rates. IC Role / Device Role / Timing Role: Primary burst-access SRAM providing 36-bit-wide, zero-latency read/write for header parsing and forwarding table lookups. Use Value: 200 MHz clock rate and NoBL™ architecture sustain >7 Gbps effective bandwidth with deterministic 3.2 ns read latency. |
Use Scenario: Shared memory pool for crossbar arbitration in modular telecom switching chassis. IC Role / Device Role / Timing Role: Pipelined memory node supporting concurrent read/write from multiple port controllers using byte-write granularity. Use Value: Four independent BWa–BWd signals enable per-byte write masking - critical for partial updates in distributed queue management. |
| PCI Express Endpoint Buffer | Real-Time Video Frame Store |
|
Use Scenario: Temporary storage for PCIe TLP payloads in add-in cards requiring low-latency DMA transfers. IC Role / Device Role / Timing Role: Synchronous burst SRAM interfaced directly to PCIe root complex logic with CEN-controlled clock gating. Use Value: CEN pin allows dynamic clock suspension during idle periods - reducing dynamic power without losing pipeline state. |
Use Scenario: Line-buffered frame storage in broadcast-grade SDI video processors handling 1080p60 streams. IC Role / Device Role / Timing Role: Dual-port-capable memory (via ADV/LD and burst modes) supporting simultaneous capture and playback addressing. Use Value: MODE-strapped linear/interleaved burst order aligns with video line-scan or field-sequential access patterns. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72V2115L10PF | 10 ns access time, 100 MHz max frequency, 512K × 18 organization, 3.3 V only (no VDDQ flexibility) | Limited to lower-bandwidth control-plane buffering; lacks byte-write granularity and ZZ sleep mode | Choose when cost sensitivity outweighs bandwidth requirements and system uses fixed 3.3 V I/O. |
| ISSI IS61WV102436B | 12 ns access, 166 MHz max, 1M × 36 organization, no JTAG, no MODE-selectable burst order | Suitable for non-bursting or static-address applications; no support for interleaved burst protocols | Prefer where JTAG testability and burst-mode configurability are not required, and higher density is acceptable. |
Compared with IDT72V2115L10PF and IS61WV102436B, CY7C1354C-200AXCT uniquely combines 200 MHz operation, per-byte write control, programmable burst order, and deep-sleep mode - making it optimal for latency-sensitive, burst-intensive networking and video infrastructure.
Availability
CY7C1354C-200AXCT is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, and PCIe endpoint buffering requiring stable component supply across extended product lifecycles.
Supply support for CY7C1354C-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and connectivity solutions for industrial and communications markets.
CY7C1354C belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, back-to-back burst memory access in high-speed packet processing and real-time data path applications.
FAQ
What is the function of the MODE pin on CY7C1354C-200AXCT?
The MODE pin is a static strap input that configures burst address sequencing: tied HIGH for interleaved burst order (e.g., 0, 2, 4, 6…), pulled LOW for linear burst order (e.g., 0, 1, 2, 3…). It must be set before initialization and remains latched during operation; no reconfiguration is possible mid-operation.
Can CY7C1354C-200AXCT operate with 2.5 V I/O while using 3.3 V core supply?
Yes. The device supports independent VDD (3.3 V ±0.3 V) and VDDQ (2.5 V ±0.2 V or 3.3 V ±0.3 V) supplies. This allows direct interface with 2.5 V FPGA I/O banks while maintaining full 200 MHz performance and 3.2 ns access timing - verified in Cypress AC switching characteristics tables.
How does the ZZ (sleep) mode reduce power consumption?
Asserting ZZ asynchronously places the device into deep sleep, cutting CMOS standby current to ≤40 mA (typical) while retaining memory contents. Unlike CEN-based clock gating, ZZ disables internal clocks and bias circuits - resulting in ~60% lower quiescent power versus active standby, with wake-up latency under 100 ns.
Is CY7C1354C-200AXCT pin-compatible with ZBT SRAMs?
Yes - it is explicitly designed as pin-compatible and functionally equivalent to industry-standard ZBT SRAMs (e.g., IDT ZBT series). Signal mapping, timing conventions, and burst protocol behavior match ZBT specifications, enabling drop-in replacement in existing ZBT-based designs without layout or firmware changes.
CY7C1354C-200AXCT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- NoBL™
- Package/Case:
- 100-LQFP
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 3.135V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x20)
CY7C1354C-200AXCT FAQ
1.How can I place an order for CY7C1354C-200AXCT through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1354C-200AXCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1354C-200AXCT reliable?
The price and inventory of CY7C1354C-200AXCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1354C-200AXCT is usually 5 days.
3.What payment methods are accepted for CY7C1354C-200AXCT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1354C-200AXCT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1354C-200AXCT?
CY7C1354C-200AXCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1354C-200AXCT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1354C-200AXCT?
For technical support, including CY7C1354C-200AXCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1354C-200AXCT requirements.
6.How does Aetrix verify that CY7C1354C-200AXCT is sourced from the original manufacturer or authorized distributors?
All CY7C1354C-200AXCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1354C-200AXCT meets industry standards.
7.What is the process for return or replacement of CY7C1354C-200AXCT?
All CY7C1354C-200AXCT units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1354C-200AXCT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1354C-200AXCT part is unused and in its original packaging.
Return procedure for CY7C1354C-200AXCT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1354C-200AXCT Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

