Cypress Semiconductor Corp CY7C1370DV25-200AXCT

Overview

CY7C1370DV25-200AXCT from Cypress Semiconductor is a 18-Mbit (512K × 36) synchronous pipelined SRAM with NoBL™ architecture, designed for high-throughput memory subsystems in network packet buffers and telecom line cards. It operates at 200 MHz with zero wait states, features 2.5 V core (VDD) and I/O (VDDQ) supplies, 3.0 ns clock-to-output delay, and supports linear/interleaved burst reads/writes.

For engineers reviewing the CY7C1370DV25-200AXCT datasheet, CY7C1370DV25-200AXCT pinout, CY7C1370DV25-200AXCT application, or CY7C1370DV25-200AXCT equivalent, key selection criteria include pipelined read/write coherency, byte-write select granularity (BWa–BWd), synchronous self-timed write control, and JEDEC-compliant 100-pin TQFP packaging with ZZ sleep mode support.

Technical Context

The device implements fully registered synchronous interfaces: all address, control, and data inputs are latched on the rising edge of CLK, and all outputs pass through output registers synchronized to CLK. Its NoBL™ logic eliminates bus latency by enabling true back-to-back read/write operations without wait states, sustaining one data transfer per clock cycle across burst sequences.

Burst addressing is controlled by ADV/LD and MODE pins-linear or interleaved order is selected at power-up via MODE strap-and internal write coherency logic ensures data integrity during overlapping read/write transitions. The ZZ pin enables low-power sleep mode with external grounding required per errata.

Key Specifications

Pinout & Package

Package: 100-pin TQFP (14 × 20 × 1.4 mm), Pb-free, JEDEC-standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous pipelined SRAM applications.

Compared with IDT72V2115L10PFI and IS61WV102432BLL-100TQLI, CY7C1370DV25-200AXCT delivers 2× higher bandwidth via NoBL™ pipelining and supports deterministic low-latency burst access critical for telecom and test equipment, while its 2.5 V dual-rail supply and ZZ sleep mode reduce system power in always-on infrastructure.

Availability

CY7C1370DV25-200AXCT is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and high-speed test equipment requiring stable component supply across extended product lifecycles.

Supply support for CY7C1370DV25-200AXCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.

This device belongs to Cypress's NoBL™ SRAM product line, engineered specifically for zero-latency, high-throughput memory subsystems in telecom infrastructure and real-time test instrumentation.

FAQ

What does "NoBL™" mean for system-level timing?

NoBL™ (No Bus Latency) means the device eliminates inter-access gaps by supporting true back-to-back read/write operations with no wait states. Each clock cycle delivers valid data or accepts new write data, enabling sustained 200 MHz throughput without pipeline stalls-critical for deterministic packet buffering and real-time signal processing.

Is the ZZ pin functional in the CY7C1370DV25-200AXCT package?

Yes, the ZZ pin (Pin 64 in the 100-pin TQFP) is functional but requires external grounding per documented errata to activate sleep mode. Leaving it unconnected or floating disables sleep functionality and may cause undefined behavior; the datasheet explicitly mandates connection to GND for reliable operation.

How does the MODE pin affect burst addressing behavior?

The MODE pin selects burst order at power-up: pulled HIGH for interleaved burst (standard for cache-line access), pulled LOW for linear burst (sequential addressing). It must remain static during operation; floating defaults to HIGH. This setting directly determines address increment pattern during burst reads/writes controlled by ADV/LD.

Can CY7C1370DV25-200AXCT operate with mixed VDD/VDDQ voltages?

No-both VDD (core) and VDDQ (I/O) must be supplied at 2.5 V ± 0.2 V. The device lacks voltage translation circuitry; applying different voltages risks violating absolute maximum ratings, causing latch-up, or corrupting data due to input threshold mismatches between core and I/O domains.