Cypress Semiconductor Corp CY7C1412BV18-200BZC
- Part No.:
- CY7C1412BV18-200BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1412BV18-200BZC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:3,585
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
CY7C1412BV18-200BZC from Cypress Semiconductor is a 36-Mbit QDR® II SRAM with 2M × 18 organization, 250 MHz clock support (200 MHz guaranteed), 1.8 V core supply, and 1.4–1.8 V I/O supply. It implements separate read/write ports with DDR interfaces on both, enabling concurrent transactions and eliminating bus turnaround. Used in high-bandwidth networking buffers and packet processing ASIC/FPGA interfaces.
For engineers reviewing the CY7C1412BV18-200BZC datasheet, CY7C1412BV18-200BZC pinout, CY7C1412BV18-200BZC application, or CY7C1412BV18-200BZC equivalent, key selection criteria include 2-word burst timing, DLL-enabled 1.5-cycle read latency, HSTL-18 I/O compliance, echo clock (CQ/CQ) support for source-synchronous capture, and FBGA-165 package thermal/mechanical constraints.
Technical Context
The CY7C1412BV18-200BZC implements a synchronous pipelined QDR II architecture with physically isolated read and write data paths, each operating at DDR rates up to 500 MT/s. Its dual-clock domain uses independent K/K for address/data input latching and C/C for output timing-enabling precise skew control and eliminating turnaround delays.
It integrates a Delay Lock Loop (DLL) for accurate data placement relative to C/C clocks, supporting 1.5-cycle read latency when enabled (DLL ON) or 1-cycle latency when disabled (DOFF = LOW). Internal organization as two 1M × 18 arrays enables depth expansion via RPS/WPS and BWS[1:0] controls.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2M × 18 configuration) |
| Max Clock Frequency | 200 MHz (guaranteed operation; supports up to 250 MHz with derating) |
| Data Rate | 400 MT/s (DDR interface: 200 MHz clock → 400 million transfers/sec per port) |
| Read Latency | 1.5 cycles (DLL enabled); 1 cycle (DLL disabled via DOFF pin) |
| Supply Voltages | VDD = 1.8 V ±0.1 V (core); VDDQ = 1.4–1.8 V (I/O) |
| Output Standard | HSTL Class I (18 Ω driver impedance, calibrated via ZQ pin) |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm, 0.8 mm pitch) |
Pinout & Package
Package: 165-ball Fine-Pitch Ball Grid Array (FBGA), 15 mm × 17 mm × 1.4 mm body, 0.8 mm ball pitch, RoHS-compliant Pb-free option available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edges of K/K; supports byte-write via BWS[1:0] |
| Q[17:0] | Synchronous read data outputs | Driven on rising edges of C/C; tristated when RPS deasserted |
| K, K | Positive/negative input clocks | Capture all synchronous inputs (address, RPS, WPS, BWS, D[17:0]) |
| C, C | Positive/negative output clocks | Control Q[17:0] timing; enable board-level deskew with CQ/CQ |
| CQ, CQ | Echo clocks referenced to C/C | Free-running, source-synchronous clocks for controller data capture |
| DOFF | DLL disable control | Active-low; forces QDR I mode (1-cycle latency, ≤167 MHz max) |
| ZQ | Output impedance calibration reference | Connects to external resistor to ground to set 0.2×RQ output drive strength |
| RPS, WPS | Read/Write Port Select | Active-low; enables independent port activation for depth expansion |
| BWS[1:0] | Byte Write Select | Active-low; controls D[8:0] (BWS0) and D[17:9] (BWS1) write masking |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data ports | Enables true concurrent read/write without bus turnaround or arbitration logic |
| 2-word burst architecture | Delivers 36 bits per access cycle (2 × 18-bit words), doubling effective bandwidth vs. single-word SRAM |
| Source-synchronous echo clocks (CQ/CQ) | Eliminates setup/hold timing margin loss across PCB traces; simplifies high-speed FPGA interface design |
| HSTL-18 I/O with ZQ calibration | Ensures consistent 18 Ω output impedance across voltage/temperature/process, critical for signal integrity at 400 MT/s |
| DLL-enabled 1.5-cycle read latency | Reduces memory access delay in pipeline-critical applications like packet classification engines |
Applications
| Network Packet Buffer | FPGA-Based Protocol Accelerator |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in 10G/40G line cards. IC Role / Device Role / Timing Role: High-throughput, low-latency shared buffer between MAC and traffic manager ASICs. Use Value: Concurrent read/write eliminates serialization bottlenecks; 400 MT/s bandwidth sustains full line-rate packet buffering. |
Use Scenario: Offloading TCP/IP checksum, encryption, or deep packet inspection in reconfigurable compute platforms. IC Role / Device Role / Timing Role: Dual-port scratchpad memory for FPGA soft-core processors executing real-time protocol stacks. Use Value: 1.5-cycle latency and echo clocks enable deterministic sub-10 ns data access timing required for hard real-time processing. |
| Telecom Baseband Processing | High-Speed Test Equipment Memory |
|
Use Scenario: Interfacing with digital front-end (DFE) ASICs in 5G massive MIMO radio units. IC Role / Device Role / Timing Role: Burst-mode data exchange buffer between ADC/DAC controllers and channel estimation hardware. Use Value: 2-word burst matches typical FFT/IFFT word-pairing; HSTL-18 signaling ensures clean eye diagrams at 200 MHz DDR. |
Use Scenario: Capturing high-fidelity waveform samples in automated test systems with >1 GSPS sampling. IC Role / Device Role / Timing Role: On-board acquisition memory synchronized to pattern generator clocks. Use Value: DLL-calibrated timing and CQ/CQ echo clocks allow precise sample alignment across multiple parallel channels. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IDT72T36120L10BG | 36-Mbit QDR II+, 167 MHz max, 1.5V core, LVDS outputs (not HSTL) | Requires differential routing and termination; lower max frequency limits throughput in 200+ MHz designs | Prefer when system already uses LVDS infrastructure and 167 MHz bandwidth suffices |
| ISSI IS61WV102418B | 18-Mbit sync SRAM, 150 MHz max, single-port, CMOS I/O, no DLL or echo clocks | No concurrent access; requires external arbitration; lacks source-synchronous timing aids | Only suitable for cost-sensitive, non-concurrent, sub-150 MHz buffer applications |
Compared with IDT72T36120L10BG and IS61WV102418B, the CY7C1412BV18-200BZC uniquely delivers 200 MHz guaranteed concurrent bandwidth with HSTL-18 compatibility and integrated echo clocks-making it the only choice for FPGA-based 10G+ packet processing where timing determinism and bus efficiency are mandatory.
Availability
CY7C1412BV18-200BZC is available at Aetrix Electronics and suitable for network packet buffering, FPGA-based protocol acceleration, and telecom baseband processing requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for CY7C1412BV18-200BZC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) is a U.S.-based semiconductor company specializing in high-performance memory, microcontrollers, and programmable solutions for industrial, automotive, and communications markets.
The CY7C1412BV18 belongs to Cypress's QDR II SRAM product line, engineered specifically for ultra-low-latency, high-throughput data buffering in networking and telecommunications infrastructure where deterministic timing and concurrent access are essential.
FAQ
What is the guaranteed maximum operating frequency for CY7C1412BV18-200BZC?
The "200" in the part number denotes guaranteed operation at 200 MHz (5 ns clock period) across commercial temperature range (0°C to +70°C) and full voltage tolerance (VDD = 1.8 V ±0.1 V, VDDQ = 1.4–1.8 V). While the device supports up to 250 MHz under controlled conditions, only 200 MHz is production-tested and warranted per datasheet Rev. *E.
How does the DOFF pin affect timing behavior?
When DOFF is pulled LOW, the internal Delay Lock Loop (DLL) is disabled, forcing QDR I timing mode: read latency reduces to 1 clock cycle but maximum frequency drops to 167 MHz. When DOFF is HIGH (via 10 kΩ pull-up), DLL is active, enabling 1.5-cycle latency and full 200 MHz operation with tighter output timing windows.
Can CY7C1412BV18-200BZC be used with a single clock instead of differential K/K and C/C pairs?
Yes - the device supports single-clock mode: tie K to C and K to C (or use K/K only for both input and output registers). In this mode, Q[17:0] timing is referenced to K/K edges, and CQ/CQ become echoes of K/K. However, echo-clock deskew benefits and maximum timing margin are lost versus true differential clocking.
What is the function of the ZQ pin, and how must it be connected?
ZQ calibrates output driver impedance to match the system data bus. It must be connected to a precision resistor (typically 100 Ω) tied to VSS (ground); the device sets CQ, CQ, and Q[17:0] output impedance to 0.2 × RQ. Connecting ZQ directly to VDDQ enables minimum-impedance mode (≈10 Ω); floating or grounding ZQ is prohibited and causes undefined output drive strength.
CY7C1412BV18-200BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1412BV18-200BZC FAQ
1.How can I place an order for CY7C1412BV18-200BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1412BV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1412BV18-200BZC reliable?
The price and inventory of CY7C1412BV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1412BV18-200BZC is usually 5 days.
3.What payment methods are accepted for CY7C1412BV18-200BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1412BV18-200BZC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for CY7C1412BV18-200BZC?
CY7C1412BV18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1412BV18-200BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1412BV18-200BZC?
For technical support, including CY7C1412BV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1412BV18-200BZC requirements.
6.How does Aetrix verify that CY7C1412BV18-200BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1412BV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1412BV18-200BZC meets industry standards.
7.What is the process for return or replacement of CY7C1412BV18-200BZC?
All CY7C1412BV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1412BV18-200BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1412BV18-200BZC part is unused and in its original packaging.
Return procedure for CY7C1412BV18-200BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
CY7C1412BV18-200BZC Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

