Cypress Semiconductor Corp CY7C1413AV18-200BZC
- Part No.:
- CY7C1413AV18-200BZC
- Manufacturer:
- Cypress Semiconductor Corp
- Category:
- Memory
- Package:
- 165-LBGA
- Datasheet:
-
CY7C1413AV18-200BZC.pdf
- Description:
- IC SRAM 36MBIT PARALLEL 165FBGA
- Quantity:
- Payment:

- Shipping:

Inventory:100
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Product details
Overview
CY7C1413AV18 from Cypress Semiconductor is a 36-Mbit QDR-II SRAM with 2M × 18 organization, 1.8V core supply, and dual DDR interfaces supporting 300 MHz operation (600 MT/s data rate). It features separate read/write ports, echo clocks (CQ/CQ), and JTAG 1149.1 test access - deployed in high-speed packet buffering for network switches and routers.
For engineers reviewing the CY7C1413AV18 datasheet, CY7C1413AV18 pinout, CY7C1413AV18 application, or CY7C1413AV18 equivalent, key selection criteria include burst depth (4-word), HSTL-18 I/O compatibility, DLL-enabled timing accuracy, and FBGA-165 package thermal/mechanical constraints in multi-chip memory subsystems.
Technical Context
The device implements synchronous pipelined QDR-II architecture with independent read and write ports sharing a multiplexed address bus. Address latching occurs on alternate rising edges of K/K clocks, enabling concurrent access without bus turnaround.
Read data is clocked out via C/C with synchronized echo clocks (CQ/CQ) to compensate for flight-time skew; writes use self-timed internal circuitry with BWS[1:0] byte-select control for partial-word updates in 18-bit-wide transfers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 36 Mbit (2M × 18 configuration) |
| Max Clock Frequency | 300 MHz - enables 600 MT/s DDR data transfer on both ports |
| Core Supply Voltage | 1.8 V ±0.1 V - defines minimum logic threshold and power domain isolation |
| I/O Supply Voltage | 1.4 V to 1.8 V - supports HSTL-18 signaling compliance and drive strength tuning |
| Burst Length | 4-word - reduces address bus toggling frequency by 4× vs. single-word access |
| Package | 165-ball FBGA (15 × 17 × 1.4 mm) - provides 0.8 mm ball pitch and thermal dissipation for high-speed routing |
| Timing Control | Integrated Delay Lock Loop (DLL) - aligns internal data strobes to external clocks within ±50 ps jitter |
Pinout & Package
165-ball Fine-Pitch Ball Grid Array (FBGA) package, 15 mm × 17 mm × 1.4 mm body height, 0.8 mm ball pitch, Pb-free and RoHS-compliant options available.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Synchronous write data inputs | Latched on rising edge of K/K; 18-bit parallel input path for burst writes |
| Q[17:0] | Synchronous read data outputs | Driven on rising edges of C/C; tri-stated when RPS is deasserted |
| K / K | Positive/negative input clocks | Control all synchronous inputs; used for address/data capture and write initiation |
| C / C | Positive/negative output clocks | Source-synchronous read data strobes; enable deskew across multiple devices |
| CQ / CQ | Echo clocks referenced to C/C | Free-running copies of C/C; simplify receiver capture timing in high-speed controllers |
| RPS / WPS | Read/Write Port Select (active LOW) | Enable port-specific transactions; allow independent read/write arbitration |
| BWS[1:0] | Byte Write Select (active LOW) | Select 9-bit subwords for partial 18-bit writes; preserve unselected bits |
| ZQ | Output impedance calibration input | Connect to external resistor to ground to tune Q[17:0]/CQ/CQ drive strength to 0.2 × RQ |
| DOFF | DLL disable control | Pull LOW to bypass DLL; alters tAC/tCO timing - used only in legacy timing modes |
| TCK/TMS/TDI/TDO | JTAG 1149.1 boundary scan interface | Support production test, debug, and in-system programming of memory subsystems |
Key Features
| Feature | Design Value |
|---|---|
| Separate read/write data paths | Eliminates bus turnaround overhead and data contention in full-duplex memory access |
| 4-word burst architecture | Reduces effective address bus frequency by 75%, easing PCB layout and timing closure |
| HSTL-18 compatible I/O | Ensures signal integrity at 600 MT/s with programmable drive strength and ZQ calibration |
| Source-synchronous echo clocks (CQ/CQ) | Compensates for board-level flight-time mismatch between clock and data nets |
| On-chip DLL | Aligns internal data launch to external clock edges with sub-cycle precision for stable tAC |
Applications
| Network Packet Buffering | High-Speed Test Equipment Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in Layer 2/3 switches with line-rate forwarding. IC Role / Device Role / Timing Role: Dual-port SRAM serving as shared buffer between ingress parser and egress scheduler, operating at 300 MHz with zero turnaround latency. Use Value: Concurrent read/write enables simultaneous header lookup (read) and payload write without arbitration stalls, sustaining 12 Gbps aggregate bandwidth. | Use Scenario: Capturing high-fidelity waveform samples in automated test equipment with real-time pattern generation. IC Role / Device Role / Timing Role: Burst-access memory staging sampled analog-to-digital converter outputs while feeding digital pattern generator outputs. Use Value: 4-word burst and echo clocks ensure deterministic capture window alignment across 18-bit ADC channels at 600 MT/s. |
| Telecom Line Card Buffering | FPGA-Based Protocol Acceleration |
Use Scenario: Temporary storage of ATM cells or Ethernet frames in carrier-grade optical line cards with strict jitter budgets. IC Role / Device Role / Timing Role: QDR-II SRAM interfacing directly to SerDes PHYs and traffic management ASICs using source-synchronous C/C and CQ/CQ. Use Value: DLL-calibrated timing and HSTL-18 I/O maintain <±50 ps setup/hold margin at 300 MHz, meeting ITU-T G.823 jitter tolerance. | Use Scenario: Offloading TCP/IP or encryption processing from host CPU using FPGA-accelerated datapath with local memory. IC Role / Device Role / Timing Role: Low-latency, high-bandwidth scratchpad memory tightly coupled to FPGA fabric for packet reassembly and crypto context switching. Use Value: Independent read/write ports allow parallel instruction fetch (read) and result writeback (write), improving pipeline utilization by 35% vs. single-port SRAM. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth dual-port SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1415AV18 | 1M × 36 organization, same QDR-II architecture and 300 MHz rating | Higher data width per access; requires fewer devices for 36-bit bus systems | Select when system data path is 36-bit and density requirement is ≤1M words |
| AS7C336200B-20BIN | 36-Mbit QDR-II+ (enhanced), 200 MHz max, 1.5V core, different pinout | Lower speed grade; optimized for lower power, not 300 MHz operation | Select when thermal budget limits 300 MHz operation and 200 MHz bandwidth suffices |
Compared with CY7C1415AV18, this part trades data width for depth (2M×18 vs. 1M×36), better matching 18-bit bus architectures; versus AS7C336200B-20BIN, it delivers +50% bandwidth at higher voltage and tighter timing control, suited for performance-critical networking.
Availability
CY7C1413AV18 is available at Aetrix Electronics and suitable for network switch buffering, telecom line card design, and FPGA-based protocol acceleration requiring stable component supply across extended product lifecycles.
Supply support for CY7C1413AV18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-performance memory and programmable solutions for communications, industrial, and automotive markets.
This device belongs to the QDR-II SRAM product line, engineered specifically for deterministic, low-latency, full-duplex memory access in packet-switched infrastructure and high-speed test systems.
FAQ
What is the function of the ZQ pin on CY7C1413AV18?
The ZQ pin calibrates output driver impedance for Q[17:0], CQ, and CQ signals. It must be connected to a precision resistor (typically 240 Ω) to ground to set output impedance to 0.2 × RQ. Direct connection to VDDQ enables minimum impedance mode; floating or grounding ZQ is prohibited and causes undefined drive strength.
Can CY7C1413AV18 operate without the DLL enabled?
Yes - asserting DOFF LOW disables the internal DLL. However, timing parameters change significantly: tAC increases by up to 1.2 ns, and tCO becomes clock-edge dependent rather than DLL-aligned. This mode is intended only for backward compatibility or specific legacy timing constraints, not for 300 MHz operation.
How does the 4-word burst affect address sequencing in CY7C1413AV18?
Each read or write access automatically increments the internal address counter over four consecutive locations. Only one base address is presented on A[18:0]; the device internally generates the next three addresses. This reduces address bus toggling frequency by 75% and simplifies controller logic for sequential access patterns typical in packet buffering.
What is the role of BWS[1:0] in partial-write operations?
BWS[1:0] controls two 9-bit subwords of the 18-bit D[17:0] bus. BWS0 enables D[8:0], BWS1 enables D[17:9]. When either is deasserted (HIGH), the corresponding 9-bit segment is ignored during write, preserving existing memory contents in those bits - essential for updating packet headers without overwriting payload data.
CY7C1413AV18-200BZC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Cypress Semiconductor Corp
- Series:
- -
- Package/Case:
- 165-LBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 36Mbit
- Memory Organization:
- 2M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- -
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-FBGA (15x17)
CY7C1413AV18-200BZC FAQ
1.How can I place an order for CY7C1413AV18-200BZC through Aetrix?
Please submit a Request for Quotation (RFQ) for CY7C1413AV18-200BZC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for CY7C1413AV18-200BZC reliable?
The price and inventory of CY7C1413AV18-200BZC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for CY7C1413AV18-200BZC is usually 5 days.
3.What payment methods are accepted for CY7C1413AV18-200BZC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for CY7C1413AV18-200BZC transactions.
Note: Certain payment methods may incur a processing fee.
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CY7C1413AV18-200BZC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your CY7C1413AV18-200BZC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for CY7C1413AV18-200BZC?
For technical support, including CY7C1413AV18-200BZC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your CY7C1413AV18-200BZC requirements.
6.How does Aetrix verify that CY7C1413AV18-200BZC is sourced from the original manufacturer or authorized distributors?
All CY7C1413AV18-200BZC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that CY7C1413AV18-200BZC meets industry standards.
7.What is the process for return or replacement of CY7C1413AV18-200BZC?
All CY7C1413AV18-200BZC units undergo pre-shipment inspection (PSI). If there is an issue with CY7C1413AV18-200BZC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The CY7C1413AV18-200BZC part is unused and in its original packaging.
Return procedure for CY7C1413AV18-200BZC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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